VS-SD553C..S50L Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 560 A
FEATURES
• High power fast recovery diode series
• 6.0 μs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® B-PUK (DO-200AB)
B-PUK (DO-200AB)
• Maximum junction temperature 125 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
560 A
Package
B-PUK (DO-200AB)
Circuit configuration
Single
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IF(RMS)
IFSM
I2t
VRRM
trr
TEST CONDITIONS
Ths
Ths
VALUES
UNITS
560
A
55
°C
1120
A
25
°C
50 Hz
12 000
60 Hz
12 570
A
50 Hz
721
60 Hz
658
Range
3000 to 4500
V
5.0
μs
TJ
125
-40 to +125
TJ
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD553C..S50L
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
IRRM MAXIMUM
AT TJ = 125 °C
mA
75
Revision: 11-Jan-18
Document Number: 93177
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD553C..S50L Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
IF(AV)
IF(RMS)
IFSM
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
TEST CONDITIONS
VALUES
560 (210)
55 (85)
1120
12 000
12 570
10 100
10 570
721
658
510
466
7210
1.77
1.95
180° conduction, half sine wave
Double side (single side) cooled
I2t
VF(TO)1
VF(TO)2
25 °C heatsink temperature double side cooled
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
50 % VRRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
t = 10 ms
No voltage initial TJ = TJ maximum
reapplied
t = 8.3 ms
t = 10 ms
50 % VRRM
reapplied
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.98
rf2
(I > x IF(AV)), TJ = TJ maximum
0.89
Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave
3.24
UNITS
A
°C
A
kA2s
kA2s
V
mW
VFM
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr AT 25 % IRRM
(μs)
S50
5.0
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
IFM
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
1000
100
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
trr
t
dir
dt
-50
6.0
900
250
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
SYMBOL
TEST CONDITIONS
TJ
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
UNITS
-40 to 125
TStg
RthJ-hs
VALUES
Conforms to JEDEC®
°C
-40 to 150
0.073
K/W
0.031
14 700
N
(1500)
(kg)
255
g
B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.009
0.009
0.011
0.011
0.014
0.014
0.020
0.020
0.036
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.006
0.006
0.011
0.011
0.015
0.015
0.021
0.021
0.036
0.036
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93177
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD553C..S50L Series
www.vishay.com
130
S D 5 5 3 C ..S5 0 L S e rie s
(S in g le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 7 3 K / W
120
110
100
90
Co nd uc tio n A ng le
80
70
60
50
30°
60°
90°
1 2 0°
40
1 8 0°
30
0
1 00
200
300
4 00
Maximum Allowable Heatsink Tem perature (°C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e ( °C )
130
Vishay Semiconductors
SD 553C..S50L Series
(Double Side Cooled)
R thJ-h s (DC) = 0.031 K/W
120
110
100
90
80
C o nd uc tio n Pe rio d
70
30°
60
50
90°
120°
40
30
180°
DC
20
10
0
200
Fig. 1 - Current Ratings Characteristics
800
1000
1200
2500
SD 5 5 3 C ..S 5 0 L S e rie s
(Sin g le S id e C o o le d )
R thJ-hs ( D C ) = 0 .0 7 3 K/ W
120
110
M aximum Average Forw ard Power Loss (W )
M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e (°C )
600
Fig. 4 - Current Ratings Characteristics
130
100
90
80
C o nd uc tio n Pe riod
70
60
50
3 0°
6 0°
40
90°
120°
30
20
180 °
DC
10
0
1 00
20 0
300
400
5 00
2250
180°
120°
90°
60°
30°
2000
1750
1500
1000
750
Co n duc tio n An g le
500
SD553C..S50L Series
TJ = 125°C
250
0
0
6 00
13 0
S D 5 5 3 C ..S 5 0 L Se rie s
(D o u b le Sid e C o o le d )
R t hJ-hs (D C ) = 0 .0 3 1 K / W
12 0
11 0
10 0
90
C o nd uc tio n Ang le
80
70
60
30 °
50
6 0°
90°
1 2 0°
40
1 8 0°
30
20
0
1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0
A v e ra g e Fo rw a r d C u rre n t ( A )
Fig. 3 - Current Ratings Characteristics
100 200 300 400 500 600 700 800
Averag e Forw ard Current (A)
Fig. 5 - Forward Power Loss Characteristics
3500
Maxim um Average Forw ard Power Loss ( W)
Fig. 2 - Current Ratings Characteristics
RMS Lim it
1250
A v e ra g e F o rw a r d C u rre n t (A )
°C )
400
Average Forw ard Curren t (A)
A v e ra g e F o r w a rd C u rr e n t (A )
M a x im um A llo w a b le H e a tsin k T e m pe r a tu re (
60°
DC
180°
120°
90°
60°
30°
3000
2500
2000
RM S Lim it
1500
C o nd uc tio n Pe rio d
1000
SD553C..S50L Series
TJ = 125°C
500
0
0
200
400
600
800
1000
1200
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93177
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD553C..S50L Series
www.vishay.com
Vishay Semiconductors
10000
A t A n y R a te d Lo a d C o n d it io n A n d W it h
1 1 0 0 0 5 0 % R a t e d V R RM A p p lie d Fo llo w in g S u rg e
In it ia l T J = 1 2 5 °C
10 0 0 0
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
9000
In stan taneous Forward Current (A)
Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t (A )
12 0 0 0
8000
7000
6000
5000
S D 5 5 3 C ..S5 0 L S e rie s
4000
3000
1
10
TJ = 25°C
TJ = 125°C
1000
SD553C..S50L Series
100
1.5
100
N um be r O f E qua l A m p litude Ha lf Cy c le C urre n t Pulse s (N )
(K / W )
80 0 0
60 0 0
40 0 0
S D 5 5 3 C ..S 5 0 L S e rie s
20 0 0
0 .0 1
0 .1
3.5
4
4.5
5
SD 5 5 3 C ..S5 0 L S e rie s
thJ-hs
1 00 0 0
3
0 .1
M ax im u m N o n R e pe t it iv e Su rge C u rre nt
V e rsu s P ulse T ra in D u rat io n .
In itial TJ = 1 2 5°C
N o V o lta g e Re ap plie d
5 0 % R at e d VR RM R e ap p lie d
T ra n sie n t T h e rm a l Im p e d an c e Z
P e a k H a lf Sin e W a v e F o rw a rd C urre n t (A )
1 20 0 0
2. 5
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 40 0 0
2
In stan tan eous Forward V oltage (V )
1
0 .0 1
St e a d y S ta t e V a lu e
R t hJ-hs = 0 .0 7 3 K / W
( Sin g le S id e C o o le d )
R thJ- hs = 0 .0 3 1 K / W
( D o ub le S id e C o o le d )
( D C O p e ra t io n )
0 .0 0 1
0. 00 1
P u lse T ra in D u ra tio n (s)
0 .0 1
0 .1
1
10
10 0
Sq u a re W a v e P u lse D u ra t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
4 00
V
3 50
FP
I
T = 1 2 5°C
J
F o rw a rd R e c o v e ry ( V )
3 00
2 50
2 00
T = 2 5°C
1 50
J
1 00
50
SD 5 5 3 C ..S 5 0 L S e rie s
0
0
20 0
40 0
600
8 00
1 0 00
12 00
1 4 00
1 60 0
18 0 0
20 00
R at e O f R ise O f Fo rw a rd C u rre n t - d i/d t ( A / us)
Fig. 11 - Typical Forward Recovery Characteristics
Revision: 11-Jan-18
Document Number: 93177
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD553C..S50L Series
Vishay Semiconductors
1E4
1 0 .5
10
9. 5
9
8. 5
8
7. 5
7
6. 5
6
5. 5
5
4. 5
4
SD 5 5 3 C ..S5 0 L Se rie s
TJ = 1 2 5 ° C ; V r > 1 0 0 V
1 0 jo ule s pe r pulse
Peak Forw ard Current (A)
M a xim u m R e v e rse R e c o v e ry T im e - T rr (µ s)
www.vishay.com
I FM = 15 00 A
Sin e Pu lse
100 0 A
50 0 A
6
4
2
1
0 .8
0 .6
1E3
0. 4
0 .2
tp
10
1 00
1E2
1E1
10 0 0
1E2
Fig. 12 - Recovery Time Characteristics
1E 4
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
1E 4
25 0 0
I F M = 15 00 A
Sine Pulse
20 0 0
1 00 0 A
500 A
15 0 0
10 0 0
Peak Forward Current (A)
M a x im u m Re v e rse R e c o v e ry C h a rg e - Q rr ( µC )
1E 3
Pulse Basewidth (µs)
Rate O f Fa ll O f Forw ard Current - d i/dt ( A/µs)
1000
1 50 0
6 00
4 0 0 2 0 0 1 00
50 Hz
2000
1E 3
3000
S D 55 3 C..S5 0 L Se rie s
Si nu so id al Pu ls e
TC = 5 5°C , V RRM = 1 5 0 0 V
d v / dt = 1 0 0 0 V/ u s
4 00 0
6000
50 0
tp
10 0 0 0
SD 5 5 3 C ..S5 0 L S e rie s
TJ = 1 2 5 °C ; V r > 1 0 0 V
1E 2
1E1
0
0
50
10 0 1 50 2 00 2 50 3 00
1E 2
1E3
Fig. 16 - Frequency Characteristics
Fig. 13 - Recovery Charge Characteristics
1E4
8 00
SD 5 5 3 C.. S5 0 L Se rie s
Sin uso id al Pu ls e
TJ = 1 25°C , V RRM = 15 0 0 V
d v/ d t = 1 0 0 0 V/ µ s
I FM = 1 5 00 A
Sin e Pulse
7 00
tp
50 0 A
5 00
4 00
3 00
2 00
Peak Forw ard Current (A)
1 00 0 A
6 00
10 jo ules pe r p ulse
8
6
4
1E3
2
1
0.8
SD 5 5 3 C ..S5 0 L S e r ie s
TJ = 1 2 5 °C ; V r > 1 0 0 V
1 00
0
0
50
1 00 1 50 2 00 2 5 0 3 0 0
R ate O f Fall O f Fo rwa rd Current - di/dt (A /µs)
Fig. 14 - Recovery Current Characteristics
1E 4
Pulse Basew idth (µs)
Rate O f Fall O f Fo rward C urre nt - di/dt ( A/µs)
M ax im u m R e v e rse R e c o v e ry C u rr e n t - Ir r (A )
SD 5 5 3 C ..S5 0 L S eri es
Si nu so id al Pu lse
TJ = 1 25° C , V RRM = 1 5 0 0 V
d v /d t = 1 0 0 0 V/ µ s
0 .6
0.4
1E2
1E1
1E 2
1E 3
1E 4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 11-Jan-18
Document Number: 93177
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD553C..S50L Series
www.vishay.com
Vishay Semiconductors
1E 4
tp
200
Peak Forward Curren t (A)
Peak Forward Current (A)
1E4
50 H z
1 00
400
600
1E3
10 0 0
1 50 0
2 0 00
3000
40 0 0
6 00 0
1E2
1E 1
1E 2
SD 55 3C ..S5 0 L S er ie s
Trap e zo idal Pul se
TC = 5 5°C, V RRM = 1 5 0 0 V
dv / dt = 10 0 0 V/u s,
di/ d t = 3 0 0 A / us
1E 3
SD 5 5 3 C..S5 0 L Se rie s
Tra pez o idal Pul se
TJ = 1 2 5°C , V RRM = 1 5 0 0 V
dv / d t = 1 00 0V / µs
di /d t = 1 0 0 A / µs
tp
10 jo u le s pe r pulse
6
8
4
1E 3
2
1
0 .8
0.6
0 .4
1E 2
1E1
1E4
1E2
Pu lse Basew idth (µs)
1E3
1E4
Pulse Basew idth (µs)
Fig. 18 - Frequency Characteristics
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
Peak Forward Curren t (A)
tp
50 H z
1E3
15 0 0
60 0
1000
4 00
20 0
10 0
2 00 0
SD 5 5 3 C ..S 50 L Se ri e s
Tra pe zo ida l Pu lse
TC = 5 5° C, V RRM = 1 5 00 V
d v /d t = 1 0 0 0 V /u s,
d i/ dt = 1 0 0 A /u s
3 00 0
4000
6000
1E2
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Fig. 20 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
55
3
C
45
S50
L
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code
8
-
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
Document Number: 93177
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
25.4 (1)
26.9 (1.06)
C
A
53 (2.09) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95246
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
