VS-SD600N/R Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 600 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC® types
• Compression bonded encapsulations
B-8
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
• Converters
IF(AV)
600 A
Package
B-8
Circuit configuration
Single
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IF(RMS)
IFSM
I2t
VRRM
SD600N/R
UNITS
04 to 20
22 to 32
600
600
A
92
54
°C
940
940
50 Hz
13 000
10 500
60 Hz
13 600
11 000
50 Hz
845
551
60 Hz
772
503
Range
400 to 2000
2200 to 3200
V
-40 to +180
-40 to +150
°C
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD600N/R
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
22
2200
2300
28
2800
2900
32
3200
3300
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
35
Revision: 11-Jan-18
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VS-SD600N/R Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD600N/R
04 to 20
22 to 32
600
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
92
A
54
570
375
100
Maximum RMS forward current
IF(RMS)
DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32)
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
10 500
13 600
11 000
10 900
8830
11 450
9250
845
551
772
503
598
390
546
356
8450
5510
0.78
0.84
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.87
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
0.35
0.40
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.31
0.38
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.31
1.44
Maximum forward voltage drop
A
940
13 000
t = 0.1 to 10 ms, no voltage reapplied
t = 8.3 ms
°C
°C
100 % VRRM
reapplied
t = 10 ms
UNITS
A
kA2s
kA2s
V
mW
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
SD600N/R
04 to 20
22 to 32
-40 to 180
-40 to 150
UNITS
°C
-55 to 200
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.1
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
K/W
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
50
Approximate weight
Nm
454
Case style
See dimensions (link at the end of datasheet)
g
B-8
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.012
0.008
120°
0.014
0.014
90°
0.017
0.019
60°
0.025
0.026
30°
0.042
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93551
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VS-SD600N/R Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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180
SD600N/ R Series (400V to 2000V)
RthJC (DC) = 0.1 K/ W
170
160
150
140
Conduction Angle
130
120
110
100
30°
60°
90°
90
120°
180°
80
0
100
200
300 400
500
600
700
150
SD600N/ R Series (2500V to 3200V)
RthJC (DC) = 0.1 K/ W
140
130
120
110
Conduction Angle
100
90
30°
80
90°
70
120°
180°
60
50
0
100
Average Forward Current (A)
RthJC (DC) = 0.1 K/ W
150
Conduction Period
130
120
110
30°
100
60°
90
90°
120°
80
180°
70
0
200
400
600
DC
800
150
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
SD600N/ R Series (400V to 2000V)
140
500
600
700
1000
SD600N/ R Series (2500V to 3200V)
RthJC (DC) = 0.1 K/ W
140
130
120
110
100
Conduction Period
90
80
70
30°
60
60°
90°
50
120°
40
180°
30
0
200
400
600
DC
800
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
800
W
K/
K/
W
ta
el
-D
R
0.2
02
0.
RMS Limit
K/
W
=
500
0.
1
W
K/
600
A
hS
0.
08
180°
120°
90°
60°
30°
Rt
700
04
0.
Maximum Average Forward Power Loss (W)
300 400
Fig. 3 - Current Ratings Characteristics
180
160
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
170
60°
K/
W
400
0.4
K/ W
300
Conduc tion Angle
200
SD600N/ R Series
(400V to 2000V)
TJ = 180°C
100
0.6
K/ W
1 K/ W
1.8 K/W
0
0
100
200
300
400
500
Average Forward Current (A)
20 40
600
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93551
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD600N/R Series
Vishay Semiconductors
1100
DC
180°
120°
90°
60°
30°
1000
800
700
SA
900
R
th
Maximum Average Forward Power Loss (W)
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0.
04
0.
08
=
K/
W
0.
02
K/
W
K/
W
-D
el
ta
R
0.1
K/
W
600
500 RMS Limit
0.2
K/
W
Conduction Period
400
300
SD600N/ R Series
(400V to 2000V)
TJ = 180°C
200
100
0.4
K/ W
0.6 K
/W
1 K/ W
1.8 K/ W
0
0
200
400
600
800
20 40
1000
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
900
180°
120°
90°
60°
30°
800
R
SA
th
Maximum Average Forward Power Loss (W)
Fig. 6 - Forward Power Loss Characteristics
500
=
0.
0.
04
02
K/
K/
W
0.
W
06
-D
K/
el
W
ta
R
0.1
K/
W
400
0.2
700
600
RMS Limit
300
Conduction Angle
200
SD600N/ R Series
(2500V to 3200V)
TJ = 150°C
K/ W
0.4 K
/W
100
1 K/ W
0
0
100
200
300
400
500
25
600
Average Forward Current (A)
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Maximum Average Forward Power Loss (W)
Fig. 7 - Forward Power Loss Characteristics
1100
1000
900
800
700
DC
180°
120°
90°
60°
30°
R
600
500
400
300
200
100
th
S
A =
0.0
0.0
2K
4K
/W
0.0 / W
6K
-D
/W
elt
a
0.1
R
K/ W
RMS Limit
Conduction Period
SD600N/ R Series
(2500V to 3200V)
TJ = 150°C
0.2
K/ W
0.4 K
/
W
1 K/ W
0
25
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93551
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD600N/R Series
12000
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
10000
8000
6000
4000
SD600N/ R Series
(400V to 2000V)
2000
1
10
12000
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ= 150 °C
No Voltage Reapplied
Rated VRRMReapplied
8000
6000
4000
SD600N/ R Series
(2500V to 3200V)
2000
0.01
100
0.1
Fig. 12 - Maximum Non-Repetitive Surge Current
14000
10000
12000
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
No Voltage Reapplied
Rated VRRM Reapplied
8000
6000
4000
SD600N/ R Series
(400V to 2000V)
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 9 - Maximum Non-Repetitive Surge Current
TJ = 25°C
TJ= 180°C
1000
SD600N/ R Series
(400V to 2000V)
100
2000
0.01
0.1
0
1
Pulse Train Duration (s)
1
2
3
4
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
10000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
8000
6000
4000
SD600N/ R Series
(2500V to 3200V)
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
1
Pulse Train Duration (s)
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
TJ = 25°C
TJ= 150°C
1000
SD600N/ R Series
(2500V to 3200V)
100
2000
1
10
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD600N/R Series
Transient Thermal Impedanc e Z thJC (K/ W)
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Vishay Semiconductors
1
0.1
Steady State Value:
RthJC = 0.1 K/ W
(DC Operation)
0.01
SD600N/ R Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
60
0
N
32
P
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = stud base B-8 3/4" 16UNF-2A
8
-
C = ceramic cap
For metric device M24 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95303
Revision: 11-Jan-18
Document Number: 93551
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Outline Dimensions
Vishay Semiconductors
B-8
DIMENSIONS in millimeters (inches)
Ceramic housing
26 (1.023) MAX.
5 (0.20) ± 0.3 (0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
C.S. 70 mm2
245 (9.645)
255 (10.04)
38 (1.5)
DIA. MAX.
80 (3.15)
MAX.
115 (4.52) MIN.
47 (1.85)
MAX.
21 (0.83) MAX.
27.5 (1.08)
MAX.
SW 45
3/4"-16UNF-2A *
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Document Number: 95303
Revision: 11-Apr-08
For technical questions, contact: indmodules@vishay.com
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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