VS-SD800C..L Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 1200 A
FEATURES
• Wide current range
• High voltage ratings up to 4500 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style DO-200AB (B-PUK)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
B-PUK (DO-200AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
IF(AV)
1200 A
Package
B-PUK (DO-200AB)
Circuit configuration
Single
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
SD800C..L
UNITS
24 to 36
40 to 45
1180
1065
A
55
55
°C
2280
2040
A
25
25
°C
50 Hz
13 600
12 200
60 Hz
14 240
12 800
A
50 Hz
925
745
60 Hz
845
680
Range
2400 to 3600
4000 to 4500
V
-40 to +150
-40 to +150
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD800C..L
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
24
2400
2500
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
50
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VS-SD800C..L Series
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FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
IF(AV)
IF(RMS)
Maximum RMS forward current
IFSM
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
Maximum I2t for fusing
I2t
55 (85)
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
50 % VRRM
reapplied
No voltage
reapplied
UNITS
40 to 45
1180 (550) 1065 (490)
25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
24 to 36
180° conduction, half sine wave
Double side (single side) cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
SD800C..L
TEST CONDITIONS
SYMBOL
Sinusoidal half wave,
initial TJ = TJ maximum
50 % VRRM
reapplied
A
55 (85)
2280
2040
13 600
12 200
14 240
12 800
11 440
10 250
11 980
10 750
925
745
845
680
654
526
597
480
t = 0.1 to 10 ms, no voltage reapplied
9250
7450
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.90
1.06
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.10
1.18
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.38
0.44
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.34
0.41
Ipk = 2000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.66
1.95
°C
A
kA2s
kA2s
V
m
VFM
Maximum forward voltage drop
V
THERMAL AND MECHANICAL SPECIFICATIONS
SYMBO
L
PARAMETER
Maximum junction operating
temperature range
TEST CONDITIONS
VALUES
TJ
- 40 to +150
Maximum storage temperature
range
TStg
- 55 to +200
Maximum thermal resistance,
junction to heatsink
RthJ-hs
UNITS
°C
DC operation single side cooled
0.073
DC operation double side cooled
0.031
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
14 700 (1500)
N (kg)
255
g
B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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VS-SD800C..L Series
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SD800C..L Series (2400V to 3600V )
(Single Side Cooled)
R thJ-hs (DC) = 0.073 K/W
140
130
120
110
100
C o nduc tio n A ng le
90
80
30°
70
60°
90°
60
120°
180°
50
40
30
0
100 200 300 400 500 600 700 800 900
Maxim um Allowable Heatsin k T emperature (°C)
Maxim um Allowa ble Heatsink Tem pera ture (°C)
150
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R th J-hs (D C) = 0.031 K/W
C o nd uc tio n Ang le
30°
0
C on duc tio n Perio d
90°
30°
0
2 00
400
60 0
1 8 0°
DC
8 0 0 1 00 0 12 00 1 4 00
120
110
100
C o nduc tio n A ng le
90
80
30°
70
90°
0
400
800
90°
180°
1200
120°
180°
50
40
30
0
100 200 300 400 500 600 700 800
1600
Avera ge Forwa rd Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
M a x im u m A llo w a b le He a t sin k T e m p e r a tu re (° C )
Maxim um Allowable Heatsin k T emperature (°C)
C o nd uc tio n Ang le
120°
60°
60
Averag e Forw ard Current (A)
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R th J-hs (D C) = 0.031 K/W
60°
1600
SD800C..L Series (4000V to 4500V )
(Single Side Cooled )
R thJ-h s (DC) = 0.073 K/W
140
130
Fig. 2 - Current Ratings Characteristics
30°
1200
150
A v e ra g e F o rw a rd C u rre n t (A )
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
800
Fig. 4 - Current Ratings Characteristics
Maximum Allowab le Heatsink Tem perature ( °C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (° C )
S D 8 0 0 C ..L S e rie s (2 4 0 0 V to 3 6 0 0 V )
(S in g le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 7 3 K/ W
120 °
400
180°
Avera ge Forwa rd Curren t (A)
Fig. 1 - Current Ratings Characteristics
6 0°
90°
120°
Avera ge Forward Curren t (A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
60°
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD 8 0 0 C ..L S e rie s (4 0 0 0 V t o 4 5 0 0 V )
(S in g le Sid e C o o le d )
R thJ-h s (D C ) = 0 .0 7 3 K / W
C o nduc tio n Pe rio d
90°
60 °
1 2 0°
1 8 0°
30°
0
2 00
4 00
6 00
80 0
DC
1 00 0
1 20 0
A v e ra g e Fo rw a rd C u rre n t (A )
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD800C..L Series
Vishay Semiconductors
4500
150
140
130
120
110
100
90
80
70
60
50
40
30
20
SD800C..L Series (4000V to 4500V )
(Double Side Cooled)
R thJ-h s (DC) = 0.031 K/W
Co n duc tio n A ng le
30°
0
200
400
60°
600
90°
120°
180°
Maximum Average Forw ard Power Loss (W )
Maximum Allowable Heatsink Tem perature (°C)
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4000
DC
180°
120°
90°
60°
30°
3500
3000
2500
2000
C o nd uct io n Perio d
1500
SD800C..L Series
(2400V to 3600V)
TJ = 150°C
1000
500
0
0
800 1000 1200 1400
Averag e Forw ard Curren t (A)
C o ndu ctio n Pe rio d
30°
60 °
90°
120 °
1 8 0°
DC
40 0
80 0
12 0 0
1 60 0
2 00 0
180°
120°
90°
60°
30°
3000
2500
C o ndu ct io n A ng le
1000
SD800C..L Series
(4000V to 4500V )
TJ = 150°C
500
0
0
2000
1500
C o ndu ctio n A ng le
1000
SD800C..L Series
(2400V to 3600V )
TJ = 150°C
0
0
200 400 600 800 1000 1200 1400 1600
Average Forw ard Current (A)
Fig. 9 - Forward Power Loss Characteristics
200
400
600
800 1000 1200 1400
Fig. 11 - Forward Power Loss Characteristics
Maximu m Average Forward Pow er Loss (W)
M aximum Average Forward Power Loss ( W)
RMS Lim it
RMS Limit
1500
4500
500
2500
Average Forw ard Curren t (A)
3500
2500
2000
2000
2 40 0
Fig. 8 - Current Ratings Characteristics
180°
120°
90°
60°
30°
1500
3500
A v e ra g e F o rw a rd C u rre n t (A )
3000
1000
Fig. 10 - Forward Power Loss Characteristics
Maxim um Average Forward Pow er Loss (W)
M a x im u m A llo w a b le He a t sin k T e m p e ra t u re (°C )
S D 8 0 0 C ..L Se rie s (4 0 0 0 V t o 4 5 0 0 V )
(D o u b le S id e C o o le d )
R thJ-hs ( D C ) = 0 .0 3 1 K/ W
0
500
Average Forward Current (A)
Fig. 7 - Current Ratings Characteristics
15 0
14 0
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
RMS Lim it
DC
180°
120°
90°
60°
30°
4000
3500
3000
RMS Lim it
2500
2000
C o ndu c tio n Pe rio d
1500
SD800C..L Series
(4000V to 4500V )
TJ = 150°C
1000
500
0
0
400
800
1200
1600
2000
2400
Average Forward Curren t (A)
Fig. 12 - Forward Power Loss Characteristics
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14000
1 40 0 0
P e ak H a lf Sin e W a v e F o rw a r d C u rre n t (A )
P e a k H a lf Sin e W a v e F o rw ar d C u rre n t (A )
A t A n y R a t e d Lo a d C o n d it io n A n d W ith
1 3 0 0 0 5 0 % R a t e d V R RM A p p lie d F o llo w in g Su rg e
In it ia l TJ = 1 5 0° C
1 20 0 0
@ 6 0 H z 0 .0 0 8 3 s
1 10 0 0
@ 5 0 H z 0 .0 1 0 0 s
1 00 0 0
9 00 0
8 00 0
7 00 0
6 00 0
5 00 0
SD 8 0 0 C ..L Se rie s
(2 4 0 0 V to 3 6 0 0 V )
4 00 0
3 00 0
1
10
12000
10000
M a xim u m N o n R e p e t it iv e Su rg e C u rre n t
V e rsu s P u lse T ra in D u ra t io n .
In itia l TJ = 1 5 0 ° C
N o V o lt a g e R e a pp lie d
5 0 % R a te d V RRM R e a p p lie d
8000
6000
4000
SD 8 0 0 C ..L Se rie s
(4 0 0 0 V t o 4 5 0 0 V )
2000
0.01
10 0
0.1
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Ma ximum Non Repetitive Surge Current
V ersus Pulse Train Dura tion .
In itial TJ = 150 °C
No Voltage Reapplied
50% Rated V RR M Reapplied
14000
13000
12000
11000
TJ = 25°C
10000
9000
8000
7000
6000
5000
SD800C..L Series
(2400V to 3600V)
4000
3000
0 .0 1
0 .1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
In stantaneous Forward Current ( A)
Pea k Half Sine W ave Forward Curren t (A)
15000
TJ = 150°C
1000
SD800C..L Series
(2400V to 3600V )
100
0.5
1
Pulse Train Duration (s)
At Any Rated L oad Condition An d W ith
11000 50% Rated V RR M Applied Followin g Surge
Initial TJ = 150°C
10000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
9000
8000
7000
6000
5000
SD800C..L Series
(4000V to 4500V )
3000
10
1.5
2
2. 5
3
3.5
4
4.5
Fig. 17 - Forward Voltage Drop Characteristics
1 00
N um be r O f E qua l Am plitud e H alf Cy c le C urre nt P uls es (N )
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 0 00 0
In sta n t a n e o us Fo rw a rd C u rre n t (A )
Peak Half Sine Wave Forward Curren t (A)
12000
1
1
In stantaneous Forward V oltage (V )
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
4000
1
P u lse Tr a in D u ra t io n (s)
N um b er O f E qua l A m plitude H alf C yc le C urren t Pulse s ( N)
TJ = 2 5° C
T J = 1 5 0°C
10 0 0
SD 8 0 0 C ..L Se rie s
(4 0 0 0 V to 4 5 0 0 V )
100
0 .5
1
1. 5
2
2 .5
3
3. 5 4
4 .5
5
5 .5
In st a n t a n e o u s Fo rw a rd V o lta g e ( V )
Fig. 18 - Forward Voltage Drop Characteristics
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0 .1
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs ( K /W )
St e a d y St a te V a lue
R thJ-hs = 0 .0 7 3 K/ W
(Sin gle Sid e C o o le d )
R t hJ- hs = 0 .0 3 1 K/ W
( D o u b le Side C o o le d )
( D C O p e ra tio n )
0 .0 1
SD 8 0 0 C ..L Se rie s
0 .0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
1 00
Sq u ar e W a v e P ulse D ura t io n ( s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
80
0
C
45
1
2
3
4
5
6
L
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
0 = standard recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
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Outline Dimensions
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B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
25.4 (1)
26.9 (1.06)
C
A
53 (2.09) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
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