VS-SD803C..C Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 845 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
B-43
PRIMARY CHARACTERISTICS
IF(AV)
845 A
Package
B-43
Circuit configuration
Single
High power fast recovery diode series
1.0 μs to 1.5 μs recovery time
High voltage ratings up to 1600 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Hockey PUK version case style B-43
Maximum junction temperature 125 °C
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
VS-SD803C..C
TEST CONDITIONS
IF(AV)
S15
845
845
A
55
55
°C
1326
1326
A
25
25
°C
50 Hz
11 295
11 295
60 Hz
11 830
11 830
50 Hz
640
640
60 Hz
583
583
Range
400 to 1000
1200 to 1600
V
1.0
1.5
μs
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
trr
UNITS
S10
TJ
TJ
25
25
-40 to +125
-40 to +125
A
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD803C..S10C
VS-SD803C..S15C
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
IRRM MAXIMUM
AT TJ = 125 °C
mA
45
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VS-SD803C..C Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive current
25 °C heatsink temperature double side cooled
t = 10 ms
No voltage
reapplied
t = 8.3 ms
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level of threshold voltage
High level of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I2t
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
Ipk = 2655 A, TJ = TJ maximum tp = 10 ms sinusoidal wave
VF(TO)1
VF(TO)2
rf1
rf2
VFM
VALUES
845 (420)
55 (75)
1326
11 295
11 830
9500
9945
640
583
451
412
6400
1.02
1.32
0.38
0.28
1.89
UNITS
A
°C
A
kA2s
kA2s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
IFM
Ipk
SQUARE
PULSE
(A)
trr AT 25 % IRRM
(μs)
S10
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
dI/dt
(A/μs)
trr AT 25 % IRRM
(μs)
Vr
(V)
Irr
(A)
trr
t
dir
dt
1.0
1000
S15
Qrr
(μC)
50
2.0
45
34
3.2
87
51
Qrr
IRM(REC)
-30
1.5
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
case junction to heatsink
TEST CONDITIONS
VALUES
TJ
-40 to 125
TStg
-40 to 125
RthJ-hs
DC operation single side cooled
0.076
DC operation double side cooled
0.038
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
UNITS
°C
K/W
9800 (1000)
N (kg)
83
g
B-43
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
0.006
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93180
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VS-SD803C..C Series
130
Vishay Semiconductors
SD803C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
120
110
100
Conduction Angle
90
30°
80
60°
180°
90°
120°
70
0
50 100 150 200 250 300 350 400 450
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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130
SD803C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.038 K/ W
120
110
100
90
Conduction Period
80
70
60
90°
50
30°
110
100
Conduction Period
90
30°
60°
90°
120°
180°
DC
50
0
100
200
300
400
500
600
700
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
SD803C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
60
0
100
Conduc tion Angle
90
70
30°
60°
90°
120°
180°
60
600
800 1000 1200 1400
180°
120°
90°
60°
30°
1400
1200
RMSLimit
1000
800
600
Conduction Angle
400
SD803C..C Series
TJ = 125°C
200
0
0 100 200 300 400 500 600 700 800 900
50
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
SD803C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.038 K/ W
110
80
400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
120
200
1600
Average Forward Current (A)
130
DC
Fig. 4 - Current Ratings Characteristics
130
70
180°
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
80
120°
40
Average Forward Current (A)
120
60°
2200
DC
180°
120°
90°
60°
30°
2000
1800
1600
1400
1200
1000 RMS Limit
800
Conduction Period
600
400
SD803C..C Series
TJ = 125°C
200
0
0
200 400
600
800 1000 1200 1400
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
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VS-SD803C..C Series
10000
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
8000
7000
6000
5000
SD803C..C Series
4000
1
10
100
Transient Thermal Impedance Z thJ-hs (K/ W)
Peak Half Sine Wave Forward Current (A)
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0.1
SD803C..C Series
0.01
Steady State Value
R thJ-hs = 0.076 K/ W
(Single Side Cooled)
R thJ-hs = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
11000
Initial TJ = 125°C
10000
No Voltage Reapplied
Rated VRRMReapplied
9000
8000
7000
6000
5000
4000
SD803C..C Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Instantaneous Forward Current (A)
10000
1000
TJ= 25°C
TJ= 125°C
SD803C..C Series
10
0
0.5
1
1.5
2
2.5
3
3.5
1
10
100
2.2
2.1
SD803C..S10C Series
TJ= 125 °C; V r = 30V
I FM = 1000 A
Square Pulse
2
1.9
500 A
1.8
1.7
250 A
1.6
10
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
100
Maximum Reverse Recovery Time - Trr (µs)
12000
0.1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
4
4.5
Instantaneous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Recovery Time Characteristics
Maximum Reverse Rec overy Charge - Qrr (µC)
Peak Half Sine Wave Forward Current (A)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double-Side Cooled
0.01
Square Wave Pulse Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
130
120
I FM = 1000 A
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
30
SD803C..S10C Series
TJ = 125 °C; Vr = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Charge Characteristics
Revision: 11-Jan-18
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VS-SD803C..C Series
Vishay Semiconductors
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Current - Irr (A)
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120
I FM = 1000 A
110
Square Pulse
100
500 A
90
80
250 A
70
60
50
40
30
SD803C..S10C Series
TJ = 125 °C; V r = 30V
20
10
10 20 30 40 50 60 70 80 90 100
200
I FM = 1000 A
180
Sq ua re Pulse
160
140
500 A
120
250 A
100
80
SD803C..S15C Series
TJ= 125 °C; V r = 30V
60
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Current Characteristics
Fig. 15 - Recovery Charge Characteristics
4
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
SD803C..S15C Series
TJ= 125 °C; V r = 30V
3.5
I FM = 1000 A
Square Pulse
3
500 A
2.5
250 A
2
10
100
140
I FM = 1000 A
130
Square Pulse
120
110
100
500 A
90
80
250 A
70
60
50
SD803C..S15C Series
TJ= 125 °C; V r = 30V
40
30
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 14 - Recovery Time Characteristics
Fig. 16 - Recovery Current Characteristics
1E4
10
20 joules p er pulse
20 joules per pulse
Peak Forward Current (A)
4
1
2
2
10
1
0.4
0.4
0.2
1E3
4
0.2
0.1
0.1
0.04
0.04
0.02
0.01
1E2
tp
1E1
1E1
SD803C..S10C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ d t = 1000V/ µs
1E2
tp
1E3
Pulse Basewidth (µs)
1E4
1E1
SD803C..S10C Series
Trapezoidal Pulse
TJ= 125°C, VRRM = 800V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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VS-SD803C..C Series
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Vishay Semiconductors
1E4
10
20 joules per pulse
20 joules p er pulse
10
4
4
Peak Forward Current (A)
2
2
1
1
0.4
0.4
0.2
1E3
0.2
0.1
0.1
0.04
0.02
1E2
0.01
tp
1E1
1E1
SD803C..S15C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ d t = 1000V/ µs
1E2
SD803C..S15C Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
tp
1E3
1E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
80
3
C
16
S15
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code (see Recovery Characteristics table)
8
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95249
Revision: 11-Jan-18
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Outline Dimensions
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Vishay Semiconductors
B-43
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
15.4 (0.61)
14.4 (0.57)
C
A
40.5 (1.59) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
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