VS-SD823C..C Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 810 A, 910 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
B-43
• Hockey PUK version case style B-43
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
IF(AV)
810 A, 910 A
Package
B-43
Circuit configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
IFSM
VRRM
trr
SD823C..C
UNITS
S20
S30
810
910
A
55
55
°C
1500
1690
A
50 Hz
9300
9600
60 Hz
9730
10 050
Range
1200 to 2500
1200 to 2500
V
2.0
3.0
μs
TJ
25
-40 to +150
TJ
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD823C..S20C
VS-SD823C..S30C
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
50
Revision: 11-Jan-18
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VS-SD823C..C Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive current
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms No voltage
reapplied
t = 8.3 ms
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
SD823C..C
S20
S30
810 (425)
910 (470)
55 (85)
55 (85)
1500
1690
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
0.95
1.11
1.06
I2t
VF(TO)1
VF(TO)2
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.80
0.60
rf2
(I > x IF(AV)), TJ = TJ maximum
0.76
0.57
VFM
Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
2.20
1.85
UNITS
A
°C
A
kA2s
kA2s
V
mW
Maximum forward voltage drop
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
Ipk
SQUARE
PULSE
(A)
trr AT 25 % IRRM
(μs)
S20
2.0
S30
3.0
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
1000
dI/dt
(A/μs)
trr AT 25 % IRRM
(μs)
Vr
(V)
50
-50
IFM
Qrr
(μC)
Irr
(A)
3.5
240
110
5.0
380
130
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
case junction to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJ-hs
Mounting force, ± 10 %
Approximate weight
Case style
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 150
°C
0.076
0.038
9800 (1000)
83
B-43
K/W
N (kg)
g
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
0.007
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
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VS-SD823C..C Series
160
Vishay Semiconductors
SD823C..S20C Series
(Single Side Cooled)
R thJ-hs (DC) = 0.076 K/ W
140
120
Conduction Angle
100
80
60
40
60°
90°
30°
120°
180°
20
0
100
200
300
400
500
600
700
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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160
SD823C..S30C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
140
120
100
Conduc tion Period
80
60
30°
90°
120°
20
0
120
Conduc tion Period
80
60
DC
20
0
200
400
600
800
1000
Maximum Allowable Heatsink Temperature (°C)
Ma ximum Allowable Heatsink Temperature (°C)
SD823C..S20C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
90°
60°
120°
30°
180°
160
Conduction Angle
80
30°
60°
90°
120° 180°
40
20
0
100
200
300
400
500
600
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
700
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
120
60
1000 1200
120
100
Conduc tion Angle
80
60
40
20
60°
30°
90° 120°
180°
0
0
200
400
600
800
1000
Fig. 5 - Current Ratings Characteristics
SD823C..S30C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
100
800
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
140
600
SD823C..S20C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.038 K/ W
140
Average Forward Current (A)
160
400
Fig. 4 - Current Ratings Characteristics
160
40
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
100
DC
180°
0
Average Forward Current (A)
140
60°
40
160
SD823C..S20C Series
(Double Side Cooled)
RthJ-hs (DC) = 0.038 K/ W
140
120
100
Conduction Period
80
60
40
20
30°
60°
90°
120°
DC
180°
0
0
250
500
750
1000 1250 1500
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD823C..C Series
160
Vishay Semiconductors
SD823C..S30C Series
(Double Side Cooled)
RthJ-hs (DC) = 0.038 K/ W
140
120
100
Conduction Angle
80
60
40
60°
20
90°
30°
120°
180°
0
0
200
400
600
800
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
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3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
1500
Conduc tion Period
1000
SD823C..S20C Series
TJ = 150°C
500
0
0
1000 1200
Fig. 10 - Forward Power Loss Characteristics
160
SD823C..S30C Series
(Double Side Cooled)
RthJ-hs (DC) = 0.038 K/ W
120
100
Conduc tion Period
80
30° 60°
90°
120°
40
180°
20
DC
0
0
400
800
1200
1600
2000
Maximum Average Forw ard Power Loss(W)
Maximum Allowable Hea tsink Temperature (°C)
Fig. 7 - Current Ratings Characteristics
60
3000
180°
120°
90°
60°
30°
2500
2000
1000
Conduction Angle
500
SD823C..S30C Series
TJ = 150°C
0
0
1500
Conduction Angle
500
SD823C..S20C Series
TJ = 150°C
0
0
200
400
600
800
1000
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
RMSLimit
1000
400
600
800
1000 1200
Fig. 11 - Forward Power Loss Characteristics
3000
2000
200
Average Forward Current (A)
Fig. 8 - Current Ratings Characteristics
180°
120°
90°
60°
30°
RMS Limit
1500
Average Forward Current (A)
2500
200 400 600 800 1000 1200 14001600
Average Forward Current (A)
Average Forward Current (A)
140
RMS Limit
3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
RMS Limit
1500
Conduc tion Period
1000
SD823C..S30C Series
TJ = 150°C
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
Revision: 11-Jan-18
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VS-SD823C..C Series
9000
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150 °C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8000
7000
6000
5000
4000
3000
SD823C..S20C Series
2000
1
10
100
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
9000
8000
7000
6000
5000
4000
3000
SD823C..S30C Series
2000
0.01
0.1
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
9000
8000
7000
6000
5000
4000
3000
SD823C..S20C Series
2000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
TJ = 25°C
TJ = 150°C
1000
SD823C..S20C Series
100
0.5
1
Pulse Train Duration (s)
7000
6000
5000
4000
SD823C..S30C Series
3000
1
10
1.5
2
2.5
3
3.5
4
4.5
5
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150 °C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8000
1
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
9000
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
TJ = 25°C
TJ = 150°C
1000
SD823C..S30C Series
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
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VS-SD823C..C Series
Transient Thermal Impedance ZthJ-hs (K/ W)
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Vishay Semiconductors
0.1
SD823C..S20/ S30C Series
0.01
Steady State Value
RthJ-hs = 0.076 K/ W
(Single Side Cooled)
RthJ-hs = 0.038 K/ W
(Double Side Cooled )
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
FP
TJ = 150°C
I
Forward Rec overy (V)
80
60
TJ= 25°C
40
20
SD823C..S20C Series
0
0
400
800
1200
1600
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 20 - Typical Forward Recovery Characteristics
100
V
FP
I
TJ = 150°C
Forward Recovery (V)
80
60
TJ = 25°C
40
20
SD823C..S30C Series
0
0
400
800
1200
1600
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 21 - Typical Forward Recovery Characteristics
6
SD823C..S20C Series
TJ = 150 °C; Vr > 100V
5.5
5
IFM = 1000 A
4.5
Sine Pulse
500 A
4
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
V
Maximum Reverse Rec overy Time - Trr (µs)
100
800
IFM = 1000 A
700
Sine Pulse
600
500 A
500
400
150 A
300
200
SD823C..S20C Series
TJ = 150 °C; Vr > 100V
100
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
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VS-SD823C..C Series
Vishay Semiconductors
450
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Rec overy Current - Irr (A)
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I FM = 1000 A
Sine Pulse
400
350
500 A
300
150 A
250
200
150
100
SD823C..S20C Series
TJ= 150 °C; Vr > 100V
50
0
0
50 100 150 200 250 300
550
I FM = 1000 A
500
Sine Pulse
450
500 A
400
150 A
350
300
250
200
150
SD823C..S30C Series
TJ = 150 °C; Vr > 100V
100
50
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
1E4
7
SD823C..S30C Series
TJ = 150 °C; Vr > 100V
6.5
10 joules p er pulse
6
5.5
Peak Forward Current (A)
Maximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
IFM = 1000 A
Sine Pulse
5
500 A
4.5
150 A
4
3.5
3
4
2
1
0.6
0.4
0.2
0.1
1E3
0.08
2.5
100
1E2
1E1
1000
1E2
Fig. 25 - Recovery Time Characteristics
1E3
1E4
Pulse Basewidth (µs)
Rate Of Fall Of Forward Current - d i/d t (A/ µs)
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1200
IFM = 1000 A
Sine Pulse
1000
800
500 A
600
150 A
400
Peak Forward Current (A)
Maximum Reverse Rec overy Charg e - Qrr (µC)
SD823C..S20C Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ dt = 1000V/ µs
tp
2
10
6
2000
1000
400
200
3000
100
50 Hz
4000
6000
1E3
10000
15000
tp
20000
SD823C..S20C Series
Sinusoidal Pulse
TC= 55°C, VRRM = 800V
d v/ d t = 1000V/ us
SD823C..S30C Series
TJ = 150 °C; Vr > 100V
200
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
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VS-SD823C..C Series
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1E4
1E4
Peak Forward Current (A)
Peak Forward Current (A)
10 joules per pulse
6
4
2
0.8
1E3
1
0.6
0.4
SD823C..S20C Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
tp
1E2
1E1
1E2
1000
4000
1E3
6000
10000
15000
tp
20000
1E3
1E2
1E1
1E4
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
1E2
1E4
1E4
2000
1000
600
400
200 100
50 Hz
3000
1E3
4000
6000
SD823C..S20C Series
Trapezoidal Pulse
TC = 55°C, VRRM = 800V
dv/ d t = 1000V/ us,
di/ dt = 300A/ us
10000
15000
tp
20000
1E2
1E1
1E2
1E3
Peak Forward Current (A)
Peak Forward Current (A)
1E3
Fig. 33 - Frequency Characteristics
1E4
1
0.4
1E3
0.2
0.1
SD823C..S30C Series
Sinusoid al Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
tp
1E2
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
6
10 joules p er pulse
2
1
0.6
0.4
0.2
Peak Forward Current (A)
tp
4
2000
1E3
1E4
Pulse Basewidth (µs)
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
1000
400
200 100
50 Hz
3000
4000
6000
1E3
10000
15000
tp
20000
1E2
1E4
1E4
SD823C..S20C Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 100A/ µs
1E2
1E1
1E3
Pulse Basewidth (µs)
Fig. 31 - Frequency Characteristics
1E3
2
0.6
1E2
1E1
1E4
10 joules p er p ulse
4 6
Pulse Basewidth (µs)
Peak Forward Current (A)
SD823C..S20C Series
Trapezoidal Pulse
TC= 55°C, VRRM = 800V
d v/ dt = 1000V/ us,
d i/ d t = 100A/ us
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1E4
600 400 200 100 50 Hz
2000
3000
1E2
1E1
1E2
SD823C..S30C Series
Sinusoidal Pulse
TC = 55°C, VRRM = 800V
d v/ d t = 1000V/ us
1E3
1E4
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
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VS-SD823C..C Series
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1E4
10 joules p er pulse
Peak Forward Current (A)
Peak Forward Current (A)
1E4
6
4
2
1
1E3
0.8
0.6
0.4
SD823C..S30C Series
Trapezoida l Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
tp
1E2
1E1
1E2
10 joules per pulse
6
4
2
1
1E3
0.6
0.4
tp
1E3
1E2
1E1
1E4
SD823C..S30C Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 100A/ µs
1E2
Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1000
600
400 200
Peak Forward Current (A)
Peak Forward Current (A)
1E4
Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
100 50 Hz
1500
2000
1E3
3000
4000
6000
10000
tp
15000
1E2
1E1
1E3
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1E2
SD823C..S30C Series
Trapezoidal Pulse
TC= 55°C, VRRM = 800V
d v/ d t = 1000V/ us,
d i/ d t = 300A/ us
1E3
1000
2000
50 Hz
3000
4000
6000
1E3
10000
15000
tp
20000
1E2
1E1
1E4
200 100
400
1E2
SD823C..S30C Series
Sinusoidal Pulse
TC = 55°C, VRRM = 800V
d v/ d t = 1000V/ us
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 37 - Frequency Characteristics
Fig. 39 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
82
3
C
25
S20
C
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code
8
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95249
Revision: 11-Jan-18
Document Number: 93181
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
B-43
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03) MIN.
both ends
25.3 (1) DIA. MAX.
2 places
15.4 (0.61)
14.4 (0.57)
C
A
40.5 (1.59) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95249
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
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