VS-SD853C..S50K Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 990 A
FEATURES
• High power fast recovery diode series
• 5.0 μs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
K-PUK (DO-200AC)
• Case style conform to JEDEC® K-PUK (DO-200AC)
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
990 A
Package
K-PUK (DO-200AC)
Circuit configuration
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
Ths
IFSM
I2t
VRRM
trr
VALUES
UNITS
990
A
55
°C
1800
A
25
°C
50 Hz
19 000
60 Hz
19 900
A
50 Hz
1810
60 Hz
1652
Range
3000 to 4500
V
5.0
μs
TJ
25
-40 to +125
TJ
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD853C..S50K
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
IRRM MAXIMUM
AT TJ = 125 °C
mA
100
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VS-SD853C..S50K Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
VALUES
UNITS
990 (420)
A
55 (85)
°C
1800
19 000
No voltage
reapplied
50 % VRRM
reapplied
16 000
Sinusoidal half wave,
initial TJ = TJ
maximum
No voltage
reapplied
16 750
1805
1645
kA2s
50 % VRRM
reapplied
1165
t = 0.1 to 10 ms, no voltage reapplied
18 050
t = 10 ms
t = 8.3 ms
A
19 900
1280
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.50
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
1.67
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.70
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.65
Ipk = 2000 A, TJ = 125 °C;
tp = 10 ms sinusoidal wave
2.90
kA2s
V
mW
Maximum forward voltage drop
VFM
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
IFM
trr at 25 % IRRM
(μs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr at 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
5.0
1000
100
-50
6.5
1000
270
S50
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
SYMBOL
VALUES
TJ
UNITS
-40 to +125
TStg
RthJ-hs
Mounting force, ± 10 %
Approximate weight
Case style
TEST CONDITIONS
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
°C
-40 to +150
0.04
K/W
0.02
22 250 (2250)
N (kg)
425
g
K-PUK (DO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.0017
0.0019
0.0021
0.0021
0.0026
0.0027
0.039
0.0039
0.0067
0.0067
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.0012
0.0012
0.0021
0.0021
0.0029
0.0029
0.0041
0.0041
0.0068
0.0068
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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VS-SD853C..S50K Series
130
Vishay Semiconductors
SD853C..S50K Series
(Single Side Cooled)
R thJ-hs (DC) = 0.04 K/ W
120
110
100
90
Conduction Angle
80
70
60
30°
50
60° 90°
180°
120°
40
0
100 200 300 400 500 600 700 800
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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130
SD853C..S50K Series
(Double Side Cooled)
RthJ-hs (DC) = 0.02 K/ W
120
110
100
90
80
Conduction Period
70
60
50
30°
40
30
120°
20
180°
0
110
100
90
80
Conduction Period
70
60
30°
50
60°
40
90°
120°
30
180°
DC
20
0
200
400
600
800
180°
120°
90°
60°
30°
3500
3000
2500
100
90
Conduction Angle
80
70
30°
60
60°
50
90°
120°
180°
40
30
0
200
400
600
800
1000 1200
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
RMSLimit
Conduction Angle
1000
SD853C..S50K Series
TJ = 125°C
500
0
200
400
600
800
1000 1200
Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
110
2000
1500
0
Fig. 2 - Current Ratings Characteristics
120
1600
2000
1000 1200
SD853C..S50K Series
(Double Side Cooled)
RthJ-hs (DC) = 0.02 K/ W
1200
4000
Average Forward Current (A)
130
800
Fig. 4 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
SD853C..S50K Series
(Single Side Cooled)
RthJ-hs (DC) = 0.04 K/ W
400
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
120
DC
10
Average Forward Current (A)
130
60°
90°
5000
4500
DC
180°
120°
90°
60°
30°
4000
3500
3000
RMSLimit
2500
2000
Conduction Period
1500
1000
SD853C..S50K Series
TJ = 125°C
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
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VS-SD853C..S50K Series
Vishay Semiconductors
10000
18000
At Any Rated Load Condition And With
50% Rated VRRM Applied Following Surge
16000
Initial TJ = 125 °C
@60 Hz 0.0083 s
14000
@50 Hz 0.0100 s
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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12000
10000
8000
6000
SD853C..S50K Series
TJ = 25°C
TJ = 125°C
1000
SD853C..S50K Series
100
4000
1
10
1
100
12000
10000
8000
SD853C..S50K Series
4000
0.01
0.1
6
7
8
9
0.1
(K/ W)
14000
6000
5
SD853C..S50K Series
thJ-hs
Transient Thermal Impedance Z
Peak Half Sine Wave Forward Current (A)
16000
4
Fig. 9 - Forward Voltage Drop Characteristics
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125°C
No Voltage Reapplied
50% Rated VRRM Reapplied
18000
3
Instantaneous Forward Voltage (V)
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
20000
2
1
0.01
Steady State Value
RthJ-hs = 0.04 K/ W
0.001
(Single Side Cooled)
RthJ-hs = 0.02 K/ W
(Double Side Cooled)
(DC Operation)
0.0001
0.001
0.01
Pulse Train Duration (s)
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
300
V
FP
Forward Rec overy (V)
250
TJ = 125°C
I
200
150
TJ = 25°C
100
50
SD853C..S50K Series
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 11 - Typical Forward Recovery Characteristics
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VS-SD853C..S50K Series
Vishay Semiconductors
1E4
10.5
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
10
SD853C..S50K Series
TJ = 125 °C; Vr > 100V
Peak Forward Current (A)
Maximum Reverse Rec overy Time - Trr (µs)
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I FM = 1500 A
Sine Pulse
1000 A
500 A
4
2
0.8
0.6
1E3
0.4
0.2
1E2
1E1
1000
1E3
1E4
Pulse Basewidth (µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
2200
IFM = 1500 A
Sine Pulse
2000
1800
1000 A
1600
500 A
1400
1200
1000
800
600
SD853C..S50K Series
TJ = 125 °C; Vr > 100V
400
200
Peak Forward Current (A)
Maximum Reverse Recovery Charge - Qrr (µC)
SD853C..S50K Series
Sinusoid al Pulse
TJ = 125°C, VRRM = 1500V
d v/ d t = 1000V/ µs
1E2
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
50 100 150 200 250 300
50 Hz
1000 600 400 200 100
2000
3000
1E3
4000
SD853C..S50K Series
Sinusoidal Pulse
TC= 55°C, VRRM = 1500V
dv/ dt = 1000V/ us
6000
tp
10000
1E2
1E1
0
0
1500
1E2
1E3
Fig. 16 - Frequency Characteristics
Fig. 13 - Recovery Charge Characteristics
1E4
700
1000 A
600
500 A
500
400
300
200
SD853C..S50K Series
TJ = 125 °C; Vr > 100V
100
Peak Forward Current (A)
800
IFM = 1500 A
Sine Pulse
1E4
Pulse Basewidth (µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Recovery Current - Irr (A)
10 joules p er pulse
1
tp
100
6
SD853C..S50K Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1500V
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
10 joules per pulse
6
8
4
tp
1E3
2
1
0.8
0.6
0.4
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
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VS-SD853C..S50K Series
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1E4
tp
200
100
Peak Forward Current (A)
Peak Forward Current (A)
1E4
50 Hz
400
600
1000
1500
1E3
2000
3000
SD853C..S50K Series
Trapezoidal Pulse
TC= 55°C, VRRM = 1500V
d v/ dt = 1000V/ us,
d i/ dt = 300A/ us
4000
6000
10000
1E2
1E1
1E2
1E3
SD853C..S50K Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1500V
d v/ d t = 1000V/ µs
d i/ d t = 100A/ µs
tp
4
6
10 joules per p ulse
2
1E3
1
0.8
0.6
0.4
1E2
1E1
1E4
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 18 - Frequency Characteristics
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
Peak Forward Current (A)
1E4
2000
1E3
600
1000
1500
400
200
100
50 Hz
3000
4000
6000
10000
tp
1E2
1E1
1E2
SD853C..S50K Series
Trapezoida l Pulse
TC= 55°C, VRRM = 1500V
d v/ dt = 1000V/ us,
d i/ d t = 100A/ us
1E3
1E4
Pulse Basewidth (µs)
Fig. 20 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
85
3
C
45
S50
K
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code
8
-
K = PUK case K-PUK (DO-200AC)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95247
Revision: 11-Jan-18
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Outline Dimensions
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Vishay Semiconductors
K-PUK (DO-200AC)
DIMENSIONS in millimeters (inches)
74.5 (2.93) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
1 (0.04) MIN.
both ends
47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
C
A
67 (2.64) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Document Number: 91000
