VS-ST083SP Series
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Inverter Grade Thyristors (Stud Version), 85 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
TO-94 (TO-209AC)
Circuit configuration
Single SCR
IT(AV)
85 A
VDRM/VRRM
400 V, 800 V, 1000 V, 1200 V
VTM
2.15 V
ITSM at 50 Hz
2450 A
ITSM at 60 Hz
2560 A
IGT
200 mA
TC/Ths
85 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
TC
I2t
A
85
°C
A
50 Hz
2450
A
60 Hz
2560
A
50 Hz
30
60 Hz
27
VDRM/VRRM
tq
UNITS
85
135
IT(RMS)
ITSM
VALUES
Range
TJ
kA2s
400 to 1200
V
10 to 20
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST083S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
IDRM/IRRM MAX.
AT TJ = TJ MAX.
mA
30
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
100 μs
180° el
180° el
UNITS
50 Hz
210
120
330
270
2540
400 Hz
200
120
350
210
1190
810
1000 Hz
150
80
320
190
630
400
2500 Hz
70
25
220
85
250
100
Recovery voltage Vr
50
50
50
50
50
Voltage before turn-on Vd
VDRM
VDRM
1930
A
50
V
VDRM
Rise of on-state current dI/dt
50
50
-
-
-
-
A/μs
Case temperature
60
85
60
85
60
85
°C
Equivalent values for RC circuit
22/0.15
22/0.15
22/0.15
SYMBOL
TEST CONDITIONS
W/μF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at
case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
180° conduction, half sine wave
135
No voltage
reapplied
100 % VRRM
reapplied
2060
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum peak on-state voltage
No voltage
reapplied
A
2560
Sinusoidal half wave,
initial TJ = TJ maximum
2160
30
27
100 % VRRM
reapplied
21
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
300
VTM
t = 8.3 ms
Maximum I2t for fusing
°C
2450
t = 8.3 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
UNITS
85
DC at 77 °C case temperature
t = 10 ms
Maximum I2t for fusing
VALUES
kA2s
19
ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
2.15
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.46
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.52
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
2.32
High level value of forward slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
2.34
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
SYMBOL
dI/dt
TEST CONDITIONS
VALUES
MIN. MAX.
TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
0.80
Typical delay time
td
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Maximum turn-off time
tq
TJ = TJ maximum, ITM = 100 A,
commutating dI/dt = 10 A/μs
VR = 50 V, tp = 200 μs, dV/dt = 200 V/μs
UNITS
A/μs
μs
10
20
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES
UNITS
500
V/μs
30
mA
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TEST CONDITIONS
40
TJ = TJ maximum, f = 50 Hz, d% = 50
5
5
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM/VRRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
°C
Maximum thermal resistance, junction to case
RthJC
DC operation
0.195
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat, and greased
0.08
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
See dimensions - link at the end of datasheet
TO-94 (TO-209AC)
Mounting torque, ± 10 %
Approximate weight
130
Case style
K/W
N·m
(lbf · in)
g
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.034
0.025
120°
0.041
0.042
90°
0.052
0.056
60°
0.076
0.079
30°
0.126
0.127
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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130
ST083S Series
RthJC (DC) = 0.195 K/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
130
120
110
Ø
Conduction angle
100
90
30°
60°
90° 120°
ST083S Series
RthJC (DC) = 0.195 K/W
120
110
Ø
Conduction period
100
90
30°
60°
90°
120°
80
180°
0
10
20
30
40
50
60
70
90
80
0
20
Average On-State Current (A)
DC
180
Maximum Average On-State
Power Loss (W)
ST083S Series
TJ = 125 °C
20
0
W
W
K/
W
R
40
0.5
120
K/
-Δ
Conduction angle
140
K/
W
W
Ø
0.4
K/
K/
80
2
3
1
100
0.
0.
160
0.
RMS limit
60
140
=
120
120
SA
140
100
R th
160
80
Fig. 2 - Current Ratings Characteristics
180
180°
120°
90°
60°
30°
60
40
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-State
Power Loss (W)
180°
70
80
100
0.8
80
1.2
60
K/W
K/W
40
20
0
0
10
20
30
40
50
60
70
80
90
25
Average On-State Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
250
DC
180°
120°
90°
60°
30°
200
150
R
RMS limit
Ø
100
Conduction period
ST083S Series
TJ = 125 °C
50
0
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
250
th
0.2
200
SA
K/
W
0.3
0.4
150
0.5
100
K/W
=
0.
1
K/
W
-Δ
R
K/W
K/W
0.8
K/W
1.2 K
/W
50
0
0
20
40
60
80
100
120
Average On-State Current (A)
140
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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VS-ST083SP Series
2200
Vishay Semiconductors
At any rated load condition and with
rated VRRM applied following surge
2000
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1800
1600
1400
1200
ST083S Series
1000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
ZthJC - Transient Thermal Impedance (K/W)
Peak Half Sine Wave On-State Current (A)
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Steady state value
RthJC = 0.195 K/W
(DC operation)
0.1
ST083S Series
0.01
0.001
1
10
Square Wave Pulse Duration (s)
160
Qrr - Maximum Reverse Recovery
Charge (µC)
2600
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
2400
2200
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
2000
1800
1600
1400
1200
0.1
Fig. 8 - Thermal Impedance ZthJC Characteristic
ST083S Series
1000
0.01
ITM = 500 A
ST083S Series
TJ = 125 °C
140
ITM = 300 A
120
ITM = 200 A
100
ITM = 100 A
80
60
ITM = 50 A
40
20
0.1
10
1
20
30
40
50
60
70
80
90
100
Pulse Train Duration (s)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
120
10 000
TJ = 25 °C
1000
TJ = 125 °C
ST083S Series
Irr - Maximum Reverse Recovery
Current (A)
Instantaneous On-State Current (A)
Peak Half Sine Wave On-State Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
ITM = 500 A
110
ITM = 300 A
100
ITM = 200 A
90
80
ITM = 100 A
70
60
50
ITM = 50 A
40
ST083S Series
TJ = 125 °C
30
20
10
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
10
20
30
40
50
60
70
80
90
100
Instantaneous On-State Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
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VS-ST083SP Series
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Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
100
1500 1000 500 400 200
2000
2500
3000
100
50 Hz
ST083S Series
Sinusoidal pulse
TC = 60 °C
tp
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Vishay Semiconductors
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
50 Hz
1000
1500
2000
2500
100
400
500
100
3000
ST083S Series
Sinusoidal pulse
TC = 85 °C
tp
10
200
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
500
1000
50 Hz
1500
100
2000
2500
1000
400 200
100
ST083S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
3000
tp
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST083S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
tp
1000
50 Hz
500
1500
100
400
200
100
1000
2000
2500
10
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
400
50 Hz
1000
1500
200
500
2000
100
2500
3000
tp
100
ST083S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
10
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
ST083S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
tp
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
400
50 Hz
500
100
200
1500
100
1000
2000
2500
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
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10 000
20 joules per pulse
0.5
1000
1 2
3
5
Peak On-State Current (A)
Peak On-State Current (A)
10 000
10
0.3
0.2
0.1
100
ST083S Series
Sinusoidal pulse
tp
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
4
1000
20 joules
per pulse
7.5
2
1
0.5
0.3
0.2
100
0.1
tp
10
10
10
100
1000
10
10 000
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(a)
(b)
TJ = 40 °C
1
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
Device: ST083S Series
0.1
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
08
3
S
12
P
F
N
0
L
P
1
2
3
4
5
6
7
8
9
10
11
12
1
- Vishay Semiconductors product
2
- Thyristor
3
- Essential part number
4
- 3 = fast turn-off
5
- S = compression bonding stud
6
- Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = stud base 1/2"-20UNF-2A threads
M = metric M12, contact factory for availability
8
- Reapplied dV/dt code (for tq test condition)
dV/dt - tq combinations available
9
- tq code
dV/dt (V/µs)
10
tq (µs)
12
up to 800 V
20
tq (µs)
20
only for
1000 V/1200 V
10 -
0 = eyelet terminals (gate and aux. cathode leads)
1 = fast-on terminals (gate and aux. cathode leads)
2 = flag terminals (gate and aux. cathode leads)
11 - Critical dV/dt:
None = 500 V/μs (standard value)
200
FN
FM
FK
FK
L = 1000 V/μs (special selection)
12 - None = standard production; P = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
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Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST083S and ST103S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
Red shrink
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95003
Revision: 30-Sep-08
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