VS-ST1000C20K1

VS-ST1000C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1473 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case K-PUK (A-24) • High profile hockey PUK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS K-PUK (A-24) • DC motor controls PRIMARY CHARACTERISTICS • Controlled DC power supplies IT(AV) 1473 A VDRM/VRRM 1200 V, 1400 V, 1600 V, 1800 V, 2000 V, 2200 V, 2400 V VTM 1.80 V IGT 100 mA TJ -40 °C to +125 °C Package K-PUK (A-24) Circuit configuration Single SCR • AC controllers      MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM VALUES UNITS 1473 A 55 °C 2913 A 25 °C 50 Hz 20.0 60 Hz 21.2 A 50 Hz 2000 60 Hz 1865 VDRM/VRRM Range 1200 to 2400 V tq Typical 300 μs TJ Range -40 to +125 °C IRRM MAXIMUM AT TJ = 125 °C mA I2t I2t 20 000 kA2s kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1000C..K VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 22 2200 2300 24 2400 2500 100 Revision: 21-Sep-17 Document Number: 93714 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS A 55 (85) °C DC at 25 °C heatsink temperature double side cooled 6540 A t = 10 ms 20.0 t = 8.3 ms t = 10 ms t = 8.3 ms I2t t = 8.3 ms Maximum for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 21.2 17.0 Sinusoidal half wave, initial TJ = TJ maximum 18.1 1865 1445 t = 0.1 ms to 10 ms, no voltage reapplied 20 000 VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.950 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.024 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.283 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.265 Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1360 Low level value of threshold voltage Maximum on-state voltage drop kA 2000 100 % VRRM reapplied t = 10 ms t = 8.3 ms I2t UNITS 1473 (630) 180° conduction, half sine wave Double side (single side) cooled t = 10 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 300 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 21-Sep-17 Document Number: 93714 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM DC gate current required to trigger IGT TJ = TJ maximum, f = 50 Hz, d% = 50 3 TJ = TJ maximum, tp  5 ms W A 20 V 5.0 TJ = -40 °C 200 - TJ = 25 °C 100 200 50 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 °C IGD TJ = TJ maximum DC gate voltage not to trigger UNITS 3.0 TJ = 125 °C DC gate current not to trigger MAX. 16 TJ = -40 °C VGT TYP. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled 0.003 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 21-Sep-17 Document Number: 93714 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series ST1000C..K series ( single side cooled) R thJ-hs (DC ) = 0.042 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 80 180° 70 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) 130 Vishay Semiconductors 130 ST1000C..K series (double side cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Period 80 30˚ 60˚ 70 90˚ 120˚ 60 180˚ 50 DC 40 0 400 800 1200 1600 2000 2400 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 ST1000C..K Series ( single side cooled) R thJ-hs (DC ) = 0.042 K/W 120 110 Conduction Period 100 90 30° 60° 90° 80 120° 180° DC 70 0 200 400 600 800 1000 Maximum Average On-State Power Loss (W) Average On-State Current (A) 3000 180˚ 120˚ 90˚ 60˚ 30˚ 2500 2000 RMS limit 1500 1000 Conduction Angle ST1000C..K series TJ = 125˚C 500 0 0 400 800 1200 1600 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST1000C..K Series (double side cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 30˚ 80 60˚ 90˚ 70 120˚ 60 180˚ 50 40 0 400 800 1200 1600 Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 4000 DC 180˚ 120˚ 90˚ 60˚ 30˚ 3500 3000 2500 RMS limit 2000 1500 Conduction period 1000 ST1000C..K series TJ = 125 ˚C 500 0 0 500 1000 1500 2000 2500 Average On-State Current (A) Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 21-Sep-17 Document Number: 93714 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series 18 000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 ˚C 16 000 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 14 000 12 000 10 000 8000 ST1000C..K series 6000 1 10 22 000 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 20 000 18 000 16 000 14 000 12 000 10 000 8000 ST1000C..K series 6000 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-State Current (A) 10 000 TJ = 25 ˚C TJ = 125 ˚C 1000 ST1000C..K series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-State Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady state value R thJ-hs = 0.42 K/W (single side cooled) R thJ-hs = 0.21 K/W (double side cooled) 0.01 (DC operation) 0.001 0.001 ST1000C..K series 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 21-Sep-17 Document Number: 93714 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com (1) PGM = 16 W, tp = 4 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 Ω; tr ± 1 µs b) Recommended load line for >= 30 % rated di/dt : 10 V, 10 Ω tr