VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 105 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
TO-94 (TO-209AC)
• Low thermal impedance
• High speed performance
• Compression bonding
PRIMARY CHARACTERISTICS
Package
TO-94 (TO-209AC)
Circuit configuration
Single SCR
IT(AV)
105 A
VDRM/VRRM
400 V, 800 V
VTM
1.73 V
ITSM at 50 Hz
3000 A
ITSM at 60 Hz
3150 A
IGT
200 mA
TC/Ths
85 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
105
A
85
°C
165
ITSM
I2t
50 Hz
3000
60 Hz
3150
50 Hz
45
60 Hz
41
VDRM/VRRM
tq
Range
TJ
A
kA2s
400 to 800
V
10 to 25
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
VS-ST103S
30
Revision: 24-Jan-18
Document Number: 94365
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
100 µs
180° el
180° el
50 Hz
280
180
440
330
4730
3630
400 Hz
310
200
470
300
2500
1850
1000 Hz
320
200
480
310
1530
1090
2500 Hz
340
210
490
320
840
Recovery voltage Vr
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
50
Case temperature
-
60
Equivalent values for RC circuit
85
22/0.15
V
-
60
85
A/μs
60
22/0.15
A
580
50
Rise of on-state current dI/dt
UNITS
85
°C
μF
22/0.15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
°C
165
No voltage
reapplied
3000
100 % VRRM
reapplied
2530
t = 10 ms
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
3150
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
UNITS
105
DC at 76 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
A
2650
45
41
32
kA2s
29
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
450
Maximum peak on-state voltage
VTM
ITM = 300 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
1.73
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
1.32
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.35
1.40
1.30
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of
rise of turned on current
Typical delay time
Maximum turn-off time
VALUES
UNITS
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/μs
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
0.80
tq
TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/μs
VR = 50 V, tp = 200 μs, dV/dt: See table in device code
dI/dt
minimum
maximum
TEST CONDITIONS
10
μs
25
Revision: 24-Jan-18
Document Number: 94365
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
VALUES
UNITS
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
TEST CONDITIONS
500
V/μs
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TEST CONDITIONS
40
TJ = TJ maximum, f = 50 Hz, d% = 50
5
5
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
-40 to 125
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.195
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
°C
K/W
Mounting torque, ± 10 %
Approximate weight
130
Case style
See dimensions - link at the end of datasheet
N·m
(lbf in)
g
TO-94 (TO-209AC)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.034
0.025
120°
0.040
0.042
90°
0.052
0.056
60°
0.076
0.079
30°
0.126
0.127
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 24-Jan-18
Document Number: 94365
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
130
ST103S Series
RthJC (DC) = 0.195 K/W
120
110
Ø
Conduction angle
100
90
30°
60°
90° 120°
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
130
ST103S Series
RthJC (DC) = 0.195 K/W
120
110
Ø
Conduction period
100
90
80
180°
30°
80
0
10 20 30 40 50 60 70 80 90 100 110
0
20
Average On-State Current (A)
120° 180°
DC
180
Maximum Average On-state
Power Loss (W)
W
100
0.8
80
1.2
60
R
-Δ
ST083S Series
TJ = 125 °C
20
W
K/
W
40
W
K/
Conduction angle
0.5
120
K/
1
60
140
K/
W
0.
Ø
0.4
K/
=
RMS limit
80
2
3
SA
100
140
0.
0.
160
R th
120
180°
120°
90°
60°
30°
100 120 140 160 180
80
Fig. 2 - Current Ratings Characteristics
180
160
60
40
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-State
Power Loss (W)
60° 90°
70
K/W
K/W
40
20
0
0
0
10 20 30 40 50 60 70 80 90 100 110
25
Average On-State Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
260
240
220
200
180
160
140
DC
180°
120°
90°
60°
30°
RMS limit
120
100
Ø
80
60
Conduction angle
40
ST103S Series
TJ = 125 °C
20
0
0
20
40
60
80 100 120 140 160 180
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
260
240
220
200
180
160
140
120
100
0.2
R
th
K/
SA
W
=
0.
1
0.3
K/
W
K
0.4 /W
K
0.5 /W
K/W
-Δ
R
0.8
K/W
1.2 K
/W
80
60
40
20
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 24-Jan-18
Document Number: 94365
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
2800
1
ZthJC - Transient
Thermal Impedance (K/W)
At any rated load condition and with
rated VRRM applied following surge
2600
Peak Half Sine Wave
On-State Current (A)
Vishay Semiconductors
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2400
2200
2000
1800
1600
ST103S Series
1400
1200
1
10
Steady state value
RthJC = 0.195 K/W
(DC operation)
0.1
ST103S Series
0.01
0.001
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
2400
2200
2000
1800
1600
1200
0.01
ITM = 200 A
100
ITM = 100 A
80
60
ITM = 50 A
1
10
TJ = 125 °C
1000
ST103S Series
100
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
6
Irr - Maximum Reverse Recovery Current (A)
TJ = 25 °C
3
30
40
50
60
70
80
90
100
Fig. 9 - Reverse Recovered Charge Characteristics
10 000
2
20
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
ITM = 300 A
120
20
0.1
Pulse Train Duration (s)
1
ITM = 500 A
ST103S Series
TJ = 125 °C
140
40
ST103S Series
1400
10
160
Qrr - Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
2600
1
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
2800
0.1
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
3000
0.01
120
110
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
100
90
80
70
60
50
40
ST103S Series
TJ = 125 °C
30
20
10
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 24-Jan-18
Document Number: 94365
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
10000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
2000
1000
400 200 100 50 Hz
5000
10 000
tp
ST103S Series
Sinusoidal pulse
TC = 60 °C
Peak On-State Current (A)
Peak On-State Current (A)
10 000
100
ST103S Series
Sinusoidal pulse
TC = 85 °C
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
1000
10 000 5000 2000 1000
400 200 100 50 Hz
100
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Peak On-State Current (A)
Peak On-State Current (A)
10 000
1500
1000
5000
tp
100
2500
1000 400 200 100 50 Hz
ST103S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
10
100
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
ST103S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
1000
5000
1500
2500 1000 400 200 100 50 Hz
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Peak On-State Current (A)
Peak On-State Current (A)
10 000
1500
1000
5000
2500
1000 400 200 100 50 Hz
10 000
tp
100
10
ST103S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
100
1000
10 000
tp
ST103S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
1000
5000
10 000
2500
1500 1000 400 200 100 50 Hz
100
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 24-Jan-18
Document Number: 94365
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
100 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
10 000
20 joules per pulse
1000
0.1
100
0.2
0.5 1
10
2 3 5
ST103S Series
Sinusoidal pulse
tp
ST103S Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
1000
0.1
0.2
10
2 3 5
0.5 1
100
tp
10
10
100
1000
10
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated di/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
(b)
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
TJ = 40 °C
1
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
Device: ST103S Series
0.1
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 24-Jan-18
Document Number: 94365
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
ST
10
3
S
08
P
F
N
0
P
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn-off
5
-
S = compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage ratings table)
7
-
P = stud base 1/2"-20UNF-2A
8
-
9
-
10
-
11
-
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
Reapplied dV/dt code (for tq test conditions)
10
CN DN EN FN* tq code
12
CM DM EM FM HM
CL DL EL FL* HL
tq (µs) 15
0 = eyelet terminals
18
CP DP EP FP HP
(gate and aux. cathode leads)
CK DK EK FK HK
20
HJ
25
1 = fast-on terminals
* Standard part number.
(gate and aux. cathode leads)
All other types available only on request.
None = standard production
P = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
Revision: 24-Jan-18
Document Number: 94365
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST083S and ST103S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
37
)M
IN
.
2.6 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
Red shrink
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95003
Revision: 30-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000