VS-ST103S08PFN2

VS-ST103SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 105 A FEATURES • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt • High surge current capability TO-94 (TO-209AC) • Low thermal impedance • High speed performance • Compression bonding PRIMARY CHARACTERISTICS Package TO-94 (TO-209AC) Circuit configuration Single SCR IT(AV) 105 A VDRM/VRRM 400 V, 800 V VTM 1.73 V ITSM at 50 Hz 3000 A ITSM at 60 Hz 3150 A IGT 200 mA TC/Ths 85 °C • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 105 A 85 °C 165 ITSM I2t 50 Hz 3000 60 Hz 3150 50 Hz 45 60 Hz 41 VDRM/VRRM tq Range TJ A kA2s 400 to 800 V 10 to 25 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 VS-ST103S 30 Revision: 24-Jan-18 Document Number: 94365 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 100 µs 180° el 180° el 50 Hz 280 180 440 330 4730 3630 400 Hz 310 200 470 300 2500 1850 1000 Hz 320 200 480 310 1530 1090 2500 Hz 340 210 490 320 840 Recovery voltage Vr Voltage before turn-on Vd 50 50 VDRM VDRM VDRM 50 Case temperature - 60 Equivalent values for RC circuit 85 22/0.15 V - 60 85 A/μs 60 22/0.15 A 580 50 Rise of on-state current dI/dt UNITS 85 °C μF 22/0.15 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave °C 165 No voltage reapplied 3000 100 % VRRM reapplied 2530 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 3150 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied UNITS 105 DC at 76 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES A 2650 45 41 32 kA2s 29 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 450 Maximum peak on-state voltage VTM ITM = 300 A, TJ = TJ maximum,  tp = 10 ms sine wave pulse 1.73 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)),  TJ = TJ maximum 1.32 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.35 1.40 1.30 Low level value of forward slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)),  TJ = TJ maximum High level value of forward slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current Typical delay time Maximum turn-off time VALUES UNITS TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/μs td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5  source 0.80 tq TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/μs VR = 50 V, tp = 200 μs, dV/dt: See table in device code dI/dt minimum maximum TEST CONDITIONS 10 μs 25 Revision: 24-Jan-18 Document Number: 94365 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current VALUES UNITS dV/dt TJ = TJ maximum, linear to 80 % VDRM,  higher value available on request TEST CONDITIONS 500 V/μs IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TEST CONDITIONS 40 TJ = TJ maximum, f = 50 Hz, d% = 50 5 5 TJ = TJ maximum, tp  5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6  TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating  temperature range TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.195 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) °C K/W Mounting torque, ± 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet N·m (lbf in) g TO-94 (TO-209AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.034 0.025 120° 0.040 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 24-Jan-18 Document Number: 94365 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors 130 ST103S Series RthJC (DC) = 0.195 K/W 120 110 Ø Conduction angle 100 90 30° 60° 90° 120° Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 ST103S Series RthJC (DC) = 0.195 K/W 120 110 Ø Conduction period 100 90 80 180° 30° 80 0 10 20 30 40 50 60 70 80 90 100 110 0 20 Average On-State Current (A) 120° 180° DC 180 Maximum Average On-state Power Loss (W) W 100 0.8 80 1.2 60 R -Δ ST083S Series TJ = 125 °C 20 W K/ W 40 W K/ Conduction angle 0.5 120 K/ 1 60 140 K/ W 0. Ø 0.4 K/ = RMS limit 80 2 3 SA 100 140 0. 0. 160 R th 120 180° 120° 90° 60° 30° 100 120 140 160 180 80 Fig. 2 - Current Ratings Characteristics 180 160 60 40 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-State Power Loss (W) 60° 90° 70 K/W K/W 40 20 0 0 0 10 20 30 40 50 60 70 80 90 100 110 25 Average On-State Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 260 240 220 200 180 160 140 DC 180° 120° 90° 60° 30° RMS limit 120 100 Ø 80 60 Conduction angle 40 ST103S Series TJ = 125 °C 20 0 0 20 40 60 80 100 120 140 160 180 Average On-State Current (A) Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 260 240 220 200 180 160 140 120 100 0.2 R th K/ SA W = 0. 1 0.3 K/ W K 0.4 /W K 0.5 /W K/W -Δ R 0.8 K/W 1.2 K /W 80 60 40 20 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 24-Jan-18 Document Number: 94365 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com 2800 1 ZthJC - Transient Thermal Impedance (K/W) At any rated load condition and with rated VRRM applied following surge 2600 Peak Half Sine Wave On-State Current (A) Vishay Semiconductors Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 2400 2200 2000 1800 1600 ST103S Series 1400 1200 1 10 Steady state value RthJC = 0.195 K/W (DC operation) 0.1 ST103S Series 0.01 0.001 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 2400 2200 2000 1800 1600 1200 0.01 ITM = 200 A 100 ITM = 100 A 80 60 ITM = 50 A 1 10 TJ = 125 °C 1000 ST103S Series 100 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 6 Irr - Maximum Reverse Recovery Current (A) TJ = 25 °C 3 30 40 50 60 70 80 90 100 Fig. 9 - Reverse Recovered Charge Characteristics 10 000 2 20 dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) ITM = 300 A 120 20 0.1 Pulse Train Duration (s) 1 ITM = 500 A ST103S Series TJ = 125 °C 140 40 ST103S Series 1400 10 160 Qrr - Maximum Reverse Recovery Charge (µC) Peak Half Sine Wave On-State Current (A) 2600 1 Fig. 8 - Thermal Impedance ZthJC Characteristic Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 2800 0.1 Square Wave Pulse Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current 3000 0.01 120 110 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 100 90 80 70 60 50 40 ST103S Series TJ = 125 °C 30 20 10 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Reverse Recovery Current Characteristics Revision: 24-Jan-18 Document Number: 94365 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors 10000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 2000 1000 400 200 100 50 Hz 5000 10 000 tp ST103S Series Sinusoidal pulse TC = 60 °C Peak On-State Current (A) Peak On-State Current (A) 10 000 100 ST103S Series Sinusoidal pulse TC = 85 °C Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM tp 1000 10 000 5000 2000 1000 400 200 100 50 Hz 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 10 000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM Peak On-State Current (A) Peak On-State Current (A) 10 000 1500 1000 5000 tp 100 2500 1000 400 200 100 50 Hz ST103S Series Trapezoidal pulse TC = 60 °C dI/dt = 50 A/µs 10 100 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM tp ST103S Series Trapezoidal pulse TC = 85 °C dI/dt = 50 A/µs 1000 5000 1500 2500 1000 400 200 100 50 Hz 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics 10 000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM Peak On-State Current (A) Peak On-State Current (A) 10 000 1500 1000 5000 2500 1000 400 200 100 50 Hz 10 000 tp 100 10 ST103S Series Trapezoidal pulse TC = 60 °C dI/dt = 100 A/µs 100 1000 10 000 tp ST103S Series Trapezoidal pulse TC = 85 °C dI/dt = 100 A/µs Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 1000 5000 10 000 2500 1500 1000 400 200 100 50 Hz 100 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 24-Jan-18 Document Number: 94365 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 10 000 20 joules per pulse 1000 0.1 100 0.2 0.5 1 10 2 3 5 ST103S Series Sinusoidal pulse tp ST103S Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 1000 0.1 0.2 10 2 3 5 0.5 1 100 tp 10 10 100 1000 10 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated di/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) (b) tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 40 °C 1 TJ = 25 °C TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST103S Series 0.1 Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Revision: 24-Jan-18 Document Number: 94365 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST103SP Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 10 3 S 08 P F N 0 P 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = fast turn-off 5 - S = compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage ratings table) 7 - P = stud base 1/2"-20UNF-2A 8 - 9 - 10 - 11 - dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400 Reapplied dV/dt code (for tq test conditions) 10 CN DN EN FN* tq code 12 CM DM EM FM HM CL DL EL FL* HL tq (µs) 15 0 = eyelet terminals 18 CP DP EP FP HP (gate and aux. cathode leads) CK DK EK FK HK 20 HJ 25 1 = fast-on terminals * Standard part number. (gate and aux. cathode leads) All other types available only on request. None = standard production P = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95003 Revision: 24-Jan-18 Document Number: 94365 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for ST083S and ST103S Series DIMENSIONS in millimeters (inches) Ceramic housing 37 )M IN . 2.6 (0.10) MAX. 16.5 (0.65) MAX. (0. Ø 8.5 (0.33) 9 .5 Ø 4.3 (0.17) Flexible lead 20 (0.79) MIN. C.S. 16 mm2 (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate Red shrink 70 (2.75) MIN. 215 ± 10 (8.46 ± 0.39) White shrink Ø 22.5 (0.88) MAX. 29 (1.14) MAX. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: 95003 Revision: 30-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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