VS-ST1200C20K1P

VS-ST1200C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case K-PUK (A-24) • High profile hockey PUK • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS K-PUK (A-24) • DC motor controls • Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 1650 A VDRM/VRRM 1200 V, 1400 V, 1600 V, 1800 V, 2000 V VTM 1.73 V IGT 100 mA TJ -40 °C to +125 °C Package K-PUK (A-24) Circuit configuration Single SCR • AC controllers         MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 3080 A 25 °C 30 500 60 Hz 32 000 50 Hz 4651 60 Hz 4250 Typical TJ UNITS 1650 50 Hz VDRM/VRRM tq VALUES A kA2s 1200 to 2000 V 200 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1200C..K VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 Revision: 27-Sep-17 Document Number: 94394 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms Maximum for fusing I2t A °C 3080 No voltage reapplied 30 500 100 % VRRM  reapplied 25 700 No voltage reapplied 32 000 Sinusoidal half wave, initial TJ = TJ maximum 4651 4250 100 % VRRM  reapplied t = 0.1 ms to 10 ms, no voltage reapplied 46 510 VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.91 VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.01 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.21 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.19 Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 3000 High level value of threshold voltage Maximum holding current A 26 900 Low level value of threshold voltage Maximum on-state voltage UNITS 55 (85) 3300 t = 8.3 ms I2t VALUES 1650 (700) 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 200 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 27-Sep-17 Document Number: 94394 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger TYP. 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 V 200 - TJ = 25 °C 100 200 50 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 °C TJ = 125 °C VGD A 20 TJ = -40 °C TJ = -40 °C DC gate voltage not to trigger W 5.0 VGT IGD UNITS 3.0 TJ = TJ maximum, tp  5 ms IGT DC gate current not to trigger MAX. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TJ -40 to 125 TStg -40 to 150 RthJ-hs Maximum thermal resistance, case to heatsink TEST CONDITIONS RthC-hs DC operation single side cooled 0.0.42 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94394 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series 130 Vishay Semiconductors ST1200C..K Series (Single Side Cooled) RthJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 60 120° 180° 50 40 0 200 400 600 800 1000 1200 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 50 30° 60° 90° 40 30 20 120° 180° 0 110 100 90 80 Conduction Period 70 60 30° 50 60° 90° 120° 180° 40 30 20 0 400 800 1200 DC 1600 2000 4000 180° 120° 90° 60° 30° RMS Limit 3500 3000 2500 2000 1500 1000 Conduction Angle 500 ST1200C..K Series T J = 125°C 0 0 Average On-state Current (A) 110 100 90 Conduction Angle 80 70 30° 60 60° 50 90° 40 30 0 400 800 1200 120° 180° 1600 800 1200 1600 2000 2000 Fig. 5 - On-State Power Loss Characteristics Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 3600 Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 DC 1800 2400 3000 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 600 1200 5000 DC 180° 120° 90° 60° 30° 4000 3000 RMS Limit 2000 Conduction Period 1000 0 ST1200C..K Series TJ = 125°C 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94394 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series 28000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 ST1200C..K Series 14000 12000 1 10 100 32000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 28000 No Voltage Reapplied 26000 Rated VRRM Reapplied 30000 24000 22000 20000 18000 16000 14000 ST1200C..K Series 12000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 0.01 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) 0.001 0.001 ST1200C..K Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94394 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr