VS-ST1230C..K Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1745 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
K-PUK (A-24)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
IT(AV)
1745 A
VDRM/VRRM
800 V, 1200 V, 1400 V, 1600 V
VTM
1.62 V
IGT
100 mA
TJ
-40 °C to +125 °C
Package
K-PUK (A-24)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
VALUES
UNITS
1745
A
55
°C
3200
A
25
°C
50 Hz
33 500
60 Hz
35 100
50 Hz
5615
60 Hz
5126
VDRM/VRRM
800 to 1600
tq
Typical
TJ
A
kA2s
V
200
μs
-40 to +125
°C
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST1230C..K
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
100
Revision: 27-Sep-17
Document Number: 94395
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VS-ST1230C..K Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
Maximum I2t for fusing
Maximum
I2t
for fusing
ITSM
I2t
I2t
A
55 (85)
°C
3200
No voltage
reapplied
t = 10 ms
100 % VRRM
28 200
t = 8.3 ms
reapplied
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
100 % VRRM
3971
t = 8.3 ms
reapplied
3625
t = 8.3 ms
35 100
Sinusoidal half wave,
initial TJ = TJ maximum
t = 0.1 to 10 ms, no voltage reapplied
5615
5126
56 150
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.93
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.02
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.17
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.16
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.62
VTM
Maximum holding current
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
A
29 500
Low level value of threshold voltage
Maximum on-state voltage
UNITS
1745 (700)
33 500
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
VALUES
600
1000
kA2s
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.9
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
200
μs
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
dV/dt
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
Revision: 27-Sep-17
Document Number: 94395
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VS-ST1230C..K Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
DC gate current required to trigger
16
TJ = TJ maximum, f = 50 Hz, d% = 50
3
IGD
DC gate voltage not to trigger
VGD
UNITS
W
3.0
A
20
V
5.0
TJ = -40 °C
200
-
TJ = 25 °C
100
200
50
-
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = -40 °C
DC gate current not to trigger
Max.
TJ = TJ maximum, tp 5 ms
TJ = 125 °C
VGT
typ.
TJ = TJ maximum, tp 5 ms
IGT
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
1.4
-
1.1
3.0
0.9
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will not
trigger any unit with rated VDRM
anode to cathode applied
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
0.042
DC operation double side cooled
0.021
DC operation single side cooled
0.006
DC operation double side cooled
K/W
0.003
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
24 500
(2500)
N
(kg)
425
g
K-PUK (A-24)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.003
0.003
0.002
0.002
120°
0.004
0.004
0.004
0.004
90°
0.005
0.005
0.005
0.005
60°
0.007
0.007
0.007
0.007
30°
0.012
0.012
0.012
0.012
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94395
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1230C..K Series
130
Vishay Semiconductors
ST1230C..K Series
(Single Side Cooled)
R thJ-hs (DC) = 0.042 K/W
120
110
100
90
Conduction Angle
30˚
80
60˚
70
90˚
60
120˚
180˚
50
40
0
200 400 600 800 1000 1200 1400
Maximum Allowable Heatsink Temperature
(°C)
Maximum Allowable Heatsink Temperature
(°C)
www.vishay.com
130
ST1230C..K Series
(Double Side Cooled)
R thJ-hs (DC) = 0.021 K/W
120
110
100
90
Conduction Period
80
30˚
70
60˚
60
90˚
50
40
120˚
30
180˚
0
ST1230C..K Series
(Single Side Cooled)
R thJ-hs (DC) = 0.042 K/W
110
100
90
Conduction Period
80
70
60
30˚
50
60˚
90˚
40
120˚
30
180˚
DC
20
0
400
800
1200
1600
2000
Fig. 4 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature
(°C)
Fig. 1 - Current Ratings Characteristics
120
4000
180˚
120˚
90˚
60˚
30˚
3500
3000
2500
RMS Limit
2000
1500
Conduction Angle
1000
ST1230C..K Series
T J = 125˚C
500
0
0
ST1230C..K Series
(Double Side Cooled)
R thJ-hs (DC) = 0.021 K/W
110
100
90
Conduction Angle
80
70
30˚
60˚
60
90˚
120˚
50
180˚
40
30
0
500
1000
1500
2000
800
1200 1600 2000 2400
2500
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature
(°C)
Fig. 2 - Current Ratings Characteristics
120
400
Average On-state Current (A)
Average On-state Current (A)
130
500 1000 1500 2000 2500 3000 3500
Average On-state Current (A)
Average On-state Current (A)
130
DC
20
5000
DC
180˚
120˚
90˚
60˚
30˚
4000
3000
RMS Limit
2000
Conduction Period
1000
ST1230C..K Series
T J = 125˚C
0
0
500 1000 1500 2000 2500 3000 3500
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94395
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1230C..K Series
30000
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125˚C
28000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
26000
24000
22000
20000
18000
16000
ST1230C..K Series
14000
1
10
100
34000
32000
30000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125˚C
No Voltage Reapplied
Rated VRRM Reapplied
28000
26000
24000
22000
20000
18000
16000
ST1230C..K Series
14000
12000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25˚C
1000
TJ = 125˚C
ST1230C..K Series
100
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
(K/W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
Transient Thermal Impedance Z
thJ-hs
Steady State Value
R thJ-hs = 0.042 K/W
(Single Side Cooled)
R thJ-hs = 0.021 K/W
(Double Side Cooled)
0.01
(DC Operation)
ST1230C..K Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 27-Sep-17
Document Number: 94395
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1230C..K Series
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10
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr