VS-ST173C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
IT(AV)
330 A
VDRM/VRRM
1000 V, 1200 V
VTM
2.07 V
ITSM at 50 Hz
4680 A
ITSM at 60 Hz
4900 A
IGT
200 mA
TC/Ths
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
610
A
25
°C
4680
60 Hz
4900
50 Hz
110
60 Hz
100
Range
TJ
UNITS
330
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
1000 to 1200
V
15 to 30
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST173C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
10
1000
1100
12
1200
1300
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
Revision: 12-Sep-17
Document Number: 94366
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
100 µs
180° el
50 Hz
760
660
1200
1030
5570
4920
400 Hz
730
590
1260
1080
2800
2460
1000 Hz
600
490
1200
1030
1620
1390
2500 Hz
350
270
850
720
800
Recovery voltage Vr
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
50
Heatsink temperature
40
Equivalent values for RC circuit
55
40
47/0.22
V
55
47/0.22
A
680
50
Rise of on-state current dI/dt
UNITS
A/μs
40
55
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
Maximum peak on-state voltage
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
VALUES
UNITS
330 (120)
A
55 (85)
°C
610
4680
4900
A
3940
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
4120
110
100
77
kA2s
71
I2t
t = 0.1 to 10 ms, no voltage reapplied
1100
VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
2.07
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.55
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.61
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.87
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.77
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
SYMBOL
TEST CONDITIONS
VALUES
UNITS
dI/dt
TJ = TJ maximum, VDRM = rated VDRM, ITM = 2 x dI/dt
1000
A/μs
td
TJ = 25 °C, VDM = rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: see table in device code
minimum
Maximum turn-off time
maximum
1.1
15
μs
30
Revision: 12-Sep-17
Document Number: 94366
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.016
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 12-Sep-17
Document Number: 94366
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
130
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
Ø
90
Conduction angle
80
70
30°
60
60°
90°
50
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
110
100
90
Ø
80
Conduction period
70
60
50
60°
40
30°
30
120° 180°
40
120
80
40
160
200
240
0
200
100
Average On-State Current (A)
180°
300
400
500
600
700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1000
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
90
Ø
80
Conduction period
70
60
50
90°
40
30°
180°
60°
30
DC
Maximum Average On-State
Power Loss (W)
130
Maximum Allowable
Heatsink Temperature (°C)
90°
20
0
120°
180°
120°
90°
60°
30°
900
800
700
600
RMS limit
500
400
Ø
300
Conduction angle
200
ST173C..C Series
TJ = 125 °C
100
0
20
0
50
100
200
150
250
300
0
350
100 150 200 250 300 350 400 450
50
Average On-State Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1400
130
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
110
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
DC
120°
100
90
Ø
Conduction angle
80
70
30°
180°
60°
60
90°
50
120°
40
30
DC
180°
120°
90°
60°
30°
1200
1000
800
RMS limit
600
Ø
Conduction period
400
ST173C..C Series
TJ = 125 °C
200
0
0
50
100
150
200
250
300
350
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
400
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 12-Sep-17
Document Number: 94366
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
1
At any rated load condition and with
rated VRRM applied following surge.
ST173C..C Series
Transient Thermal
Impedance ZthJ-hs (K/W)
Peak Half Sine Wave
On-State Current (A)
4500
Vishay Semiconductors
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
3500
3000
2500
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST173C..C Series
2000
1
10
0.001
0.001
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
3500
3000
2500
2000
ST173C..C Series
TJ = 125 °C
200
ITM = 500 A
ITM = 300 A
ITM = 200 A
150
ITM = 100 A
100
50
ITM = 50 A
ST173C..C Series
0
1500
0.01
0.1
0
1
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
160
ST173C..C Series
ITM = 500 A
140
Irr - Maximum Reverse
Recovery Current (A)
Instantaneous On-State Current (A)
10
250
Qrr - Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
4000
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
4500
0.1
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5000
0.01
1000
TJ = 25 °C
TJ = 125 °C
ITM = 300 A
120
ITM = 200 A
ITM = 100 A
100
ITM = 50 A
80
60
40
ST173C..C Series
TJ = 125 °C
20
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
4.5
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 12-Sep-17
Document Number: 94366
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500
200
50 Hz
100
1000
400
1500
1000
2500
3000
5000
tp
ST173C..C Series
Sinusoidal pulse
TC = 40 °C
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
2500
3000
5000
ST173C..C Series
Sinusoidal pulse
TC = 55 °C
tp
100
100
500
1500
1000
50 Hz
200
1000
100
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500 400
1000
2000 1500
1000
2500
3000
5000
tp
100
10
100
50 Hz
200 100
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
1000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000
500 400
2000
2500
3000
1000
1500
tp
5000
100
10 000
10
100
Pulse Basewidth (µs)
200 100
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
1500
3000
500
1000
400 200 100
50 Hz
2500
5000
100
10 000
tp
10
10
100
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
1000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
200 100 50 Hz
500 400
1000
1000
1500
3000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
2500
5000
100
10 000
tp
10
10
Pulse Basewidth (µs)
100
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
Revision: 12-Sep-17
Document Number: 94366
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
100 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
1000
0.5
1
2 3 5
10
0.3
0.2
0.1
100
ST173C..C Series
Sinusoidal pulse
tp
ST173C..C Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
2
1000
10
3 5
1
0.5
0.3
0.2
100
0.1
tp
10
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
IGD
0.1
0.001
0.01
TJ = 40 °C
VGD
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(b)
TJ = 25 °C
1
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
Device: ST173C..C Series
0.1
(2)
(3) (4)
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Revision: 12-Sep-17
Document Number: 94366
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST173C Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
ST
17
3
C
12
C
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn-off
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (TO-200AB)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
tq code
10
-
0 = eyelet terminals
(gate and aux. cathode unsoldered leads)
1 = fast-on terminals
(gate and aux. cathode unsoldered leads)
2 = eyelet terminals
dV/dt - t q combinations available
dV/dt (V/µs)
15
18
t (µs) 20
q
25
30
20
CL
CP
CK
CJ
--
50
-DP
DK
DJ
DH
100
-EP
EK
EJ
EH
200
-FP *
FK *
FJ
FH
400
--HK
HJ
HH
* Standard part number.
All other types available only on request.
(gate and aux. cathode soldered leads)
3 = fast-on terminals
(gate and aux. cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
Revision: 12-Sep-17
Document Number: 94366
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G = Gate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95074
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
