VS-ST180C Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
A-PUK (TO-200AB)
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
IT(AV)
350 A
VDRM/VRRM
400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
VTM
1.96 V
IGT
90 mA
TJ
-40 °C to +125 °C
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
660
A
25
°C
5000
60 Hz
5230
50 Hz
125
60 Hz
114
Typical
TJ
UNITS
350
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 2000
V
100
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST180C..C
VOLTAGE
CODE
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
V
mA
04
400
08
800
500
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
30
Revision: 27-Sep-17
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
t = 10 ms
No voltage
reapplied
5000
100 % VRRM
reapplied
4200
t = 10 ms
t = 10 ms
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
A
°C
660
t = 8.3 ms
No voltage
reapplied
5230
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
125
114
88
t = 0.1 to 10 ms, no voltage reapplied
1250
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.08
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.14
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.18
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
1.14
Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.96
VTM
IH
Maximum (typical) latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
81
High level value of threshold voltage
Maximum holding current
A
4400
Low level value of threshold voltage
Maximum on-state voltage
UNITS
55 (85)
DC at 25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
350 (140)
600
1000 (300)
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
μs
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
dV/dt
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
Revision: 27-Sep-17
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VS-ST180C Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
DC gate current required to trigger
10
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
IGD
DC gate voltage not to trigger
VGD
A
20
V
5.0
TJ = - 40 °C
180
-
TJ = 25 °C
90
150
40
-
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
TJ = 25 °C
TJ = 125 °C
2.9
-
1.8
3.0
1.2
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
UNIT
S
W
3.0
TJ = - 40 °C
DC gate current not to trigger
max.
TJ = TJ maximum, tp 5 ms
TJ = 125 °C
VGT
typ.
TJ = TJ maximum, tp 5 ms
IGT
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
mA
V
10
mA
0.25
V
VALUES
UNIT
S
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TJ
-40 to 125
TStg
-40 to 150
DC operation single side cooled
RthJ-hs
Maximum thermal resistance,
case to heatsink
TEST CONDITIONS
RthC-hs
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Approximate weight
Case style
0.17
DC operation double side cooled
Mounting force, ± 10 %
See dimensions - link at the end of datasheet
°C
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.015
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94396
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VS-ST180C Series
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130
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
110
100
Ø
90
Conduction angle
80
70
30°
180°
60
60°
50
90°
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
120
110
100
90
80
Ø
Conduction period
70
60
50
40
30
120°
60°
0
100
50
150
200
250
0
100
Average On-State Current (A)
DC
120°
200
300
400
500
600
700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
1000
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
110
100
90
Ø
80
Conduction period
70
60
50
30°
40
30
60°
20
0
100
DC
90°
180°
120°
90°
60°
30°
900
180°
Maximum Average
On-State Power Loss (W)
120
Maximum Allowable
Heatsink Temperature (°C)
180°
20
40
800
700
500
400
Ø
300
Conduction angle
200
ST180C..C Series
TJ = 125 °C
100
120°
0
200
400
300
0
Fig. 5 - On-State Power Loss Characteristics
110
100
90
Ø
Conduction angle
80
70
60
30°
180°
50
40
60°
30
90°
120°
20
0
50
100 150 200 250 300 350 400 450
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Average
On-State Power Loss (W)
130
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.17 K/W
100 150 200 250 300 350 400 450
50
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
120
RMS limit
600
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
90°
30°
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
ST180C..C Series
TJ = 125 °C
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
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4500
5000
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No Voltage Reapplied
Rated VRRM Reapplied
4500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
Peak Half Sine Wave
On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
At any rated load condition and with
rated VRRM applied following surge
3500
3000
2500
4000
3500
3000
2500
ST180C..C Series
ST180C..C Series
2000
1
10
2000
0.01
100
0.1
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-State Current (A)
1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
TJ = 25 °C
TJ = 125 °C
1000
ST180C..C Series
100
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
ZthJ-hs - Transient
Thermal Impedance (K/W)
1
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST180C..C Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
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10
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
IGD
TJ = 40 °C
VGD
0.1
0.001
(b)
TJ = 25 °C
1
tp = 4 ms
tp = 2 ms
tp = 1 ms
tp = 0.66 ms
(a)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
0.1
(3) (4)
Frequency limited by PG(AV)
Device: ST180C..C Series
0.01
(2)
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
18
0
C
20
C
1
-
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
0 = converter grade
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (TO-200AB)
8
-
0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9
-
Critical dV/dt: None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
Revision: 27-Sep-17
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Outline Dimensions
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Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G = Gate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
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