VS-ST183C Series
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Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• International standard case A-PUK (TO-200AB)
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
IT(AV)
370 A
VDRM/VRRM
400 V, 800 V
VTM
1.80 V
ITSM at 50 Hz
4900 A
ITSM at 60 Hz
5130 A
IGT
200 mA
TC/Ths
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
690
A
25
°C
4900
60 Hz
5130
50 Hz
120
60 Hz
110
Range
TJ
UNITS
370
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 800
V
10 to 20
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST183C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
40
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
UNITS
100 µs
180° el
50 Hz
770
660
1220
1160
5450
400 Hz
730
600
1270
1090
2760
2420
1000 Hz
600
490
1210
1040
1600
1370
2500 Hz
350
270
860
730
800
Recovery voltage Vr
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
50
-
40
55
Equivalent values for RC circuit
47/0.22
40
A
680
50
Rise of on-state current dI/dt
Heatsink temperature
4960
V
55
47/0.22
40
A/μs
55
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
VALUES
UNITS
370 (130)
A
55 (85)
°C
690
4900
5130
A
4120
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
4310
120
110
85
kA2s
78
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
1200
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
1.80
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.40
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.45
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.67
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.58
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
dI/dt
maximum
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
minimum
Maximum turn-off time
TEST CONDITIONS
VALUES
UNITS
1000
A/μs
1.1
10
μs
20
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TJ = TJ maximum, f = 50 Hz, d% = 50
60
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
VALUES
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
°C
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
UNITS
See dimensions - link at the end of datasheet
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.016
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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130
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
110
100
90
Ø
Conduction angle
80
70
60
30°
50
60°
180°
90°
ST183C..C Series
(Double side cooled)
RthJC (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
120
120°
110
100
90
Ø
80
Conduction period
70
60
50
90°
40
30°
30
40
DC
120°
20
80
40
0
120
160
200
0
240
100
Average On-State Current (A)
200
300
400
500
600
700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
1000
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
110
100
90
Ø
80
Conduction period
70
60
50
30° 60° 90°
40
DC
120° 180°
30
180°
120°
90°
60°
30°
900
Maximum Average
On-State Power Loss (W)
120
Maximum Allowable
Heatsink Temperature (°C)
180°
60°
800
700
600
RMS limit
500
400
Ø
300
Conduction angle
200
ST183C..C Series
TJ = 125 °C
100
20
0
0
50
100
150
200
250
300
350
0
400
100 150 200 250 300 350 400 450
50
Average On-State Current (A)
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
ST183C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
110
100
90
Ø
80
Conduction angle
70
60
50
30°
40
60°
90°
180°
120°
1400
Maximum Average
On-State Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
130
DC
180°
120°
90°
60°
30°
1200
1000
800
RMS limit
600
Ø
400
Conduction period
200
ST183C..C Series
TJ = 125 °C
30
0
50
100 150 200 250 300 350 400 450
Average On-State Current (A)
0
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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1
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
ST183C..C Series
ZthJ-hs - Transient
Themal Impedance (K/W)
Peak Half Sine Wave On-State
Current (A)
4500
3500
3000
2500
ST183C..C Series
2000
1
10
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.001
0.001
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1
10
Fig. 10 - Thermal Impedance ZthJC Characteristics
5000
Qrr - Maximum Reverse Recovery
Charge (µC)
250
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
4500
Peak Half Sine Wave
On-State Current (A)
0.1
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
4000
3500
3000
2500
ST183C..C Series
2000
0.01
ITM = 500 A
ST183C..C Series
TJ = 125 °C
200
300 A
200 A
150
100 A
100
50 A
50
0
0.1
0
1
Pulse Train Duration (s)
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
ST183C..C Series
160
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
140
Irr - Maximum Reverse
Recovery Current (A)
Instantaneous On-State Voltage (A)
0.01
1000
TJ = 25 °C
TJ = 125 °C
100
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
120
100
80
60
40
ST183C..C Series
TJ = 125 °C
20
0
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
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Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
50 Hz
500
400
200 100
1500
1000
2500
3000
5000
ST183C..C Series
Sinusoidal pulse
TC = 40 °C
tp
10 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Vishay Semiconductors
100
1000
500
1000
50 Hz
400 200 100
1500
1000
2500
3000
ST183C..C Series
Sinusoidal pulse
TC = 55 °C
5000
tp
10 000
100
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400 200 100
50 Hz
500
1000
1500 1000
2500
3000
5000
tp
ST183C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
Peak On-State Current (A)
Peak On-State Current (A)
10 000
100
1000
500 400 200
100
50 Hz
1000
1500 1000
2500
ST183C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
3000
tp
5000
100
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
50 Hz
1000 500
2500
400 200 100
1500
3000
5000
100
10 000
tp
ST183C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
10
10
100
1000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000
1500
2500
1000
500
400 200
100
3000
100
5000
10 000
tp
ST183C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
10
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
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100 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
10 000
1
0.5
0.3
1000
2
4
10
0.2
0.1
100
ST183C..C Series
Sinusoidal pulse
tp
ST183C..C Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
2
4
10
1
1000
0.3 0.5
0.2
0.1
100
tp
10
10
100
1000
10
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
IGD
0.1
0.001
0.01
TJ = 40 °C
VGD
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(b)
TJ = 25 °C
1
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
Device: ST183C..C Series
0.1
(2)
(3) (4)
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
18
3
C
08
C
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn-off
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (TO-200AB)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
tq code
10
-
0 = eyelet terminals
(gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals
(gate and auxiliary cathode unsoldered leads)
dV/dt - tq combinations available
dV/dt (V/µs)
10
12
tq (µs)
15
18
20
20
CN
CM
CL
CP
CK
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
FN*
FM
FL*
FP
FK
400
HN
HM
HL
HP
HK
* Standard part number.
All other types available only on request.
2 = eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = fast-on terminals
(gate and auxiliary cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
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Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G = Gate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
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Document Number: 91000
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