VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 195 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IT(AV)
195 A
VDRM/VRRM
400 V, 800 V
VTM
1.80 V
• Choppers
• Inverters
ITSM at 50 Hz
4900 A
• Induction heating
ITSM at 60 Hz
5130 A
• All types of force-commutated converters
IGT
200 mA
TJ
-40 °C to 125 °C
TC
85 °C
Package
TO-93 (TO-209AB)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
195
A
85
°C
306
ITSM
I2t
50 Hz
4900
60 Hz
5130
50 Hz
120
60 Hz
110
VDRM/VRRM
A
kA2s
400 to 800
V
tq
15 to 20
μs
TJ
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST183S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
40
Revision: 22-Aug-17
Document Number: 94369
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
100 µs
180° el
50 Hz
570
370
900
610
7040
400 Hz
560
360
940
630
3200
2280
1000 Hz
500
300
925
610
1780
1200
2500 Hz
340
190
760
490
880
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
50
VDRM
VDRM
VDRM
85
47/0.22
V
-
60
85
A/μs
60
47/0.22
A
560
50
60
Equivalent values for RC circuit
5220
50
50
Case temperature
UNITS
85
°C
/μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
306
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
Maximum peak on-state voltage
°C
4900
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
UNITS
195
DC at 74 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
5130
A
4120
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
4310
120
110
85
kA2s
78
I2t
t = 0.1 to 10 ms, no voltage reapplied
1200
VTM
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
1.80
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.40
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.45
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.67
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.58
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
dI/dt
maximum
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: 200 V/μs
minimum
Maximum turn-off time
TEST CONDITIONS
VALUES
UNITS
1000
A/μs
1.1
15
μs
20
Revision: 22-Aug-17
Document Number: 94369
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TJ = TJ maximum, f = 50 Hz, d% = 50
60
10
10
TJ = TJ maximum, tp 5 ms
20
5
TJ = TJ maximum VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
200
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.105
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
Mounting torque, ± 10 %
31 (275)
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
24.5 (210)
N·m
(lbf · in)
280
g
TO-93 (TO-209AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR
CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 22-Aug-17
Document Number: 94369
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
130
130
120
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
ST183S Series
RthJC (DC) = 0.105 K/W
Ø
110
Conduction angle
100
90
60 °C
30 °C
120 °C
90 °C
ST183S Series
RthJC (DC) = 0.105 K/W
120
110
Ø
Conduction period
100
90
60°
80
180°
DC
120°
180 °C
80
70
0
40
20
60
80 100 120 140 160 180 200
100
50
0
Average On-State Current (A)
200
150
250
300
350
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
350
Maximum Average On-State
Power Loss (W)
0
0.3
200
R
-Δ
50
W
ST183S Series
TJ = 125 °C
K/
Conduction angle
08
100
0.
Ø
=
150
250
SA
RMS limit
0.
16
0.2 K/W
K/
W
W
200
R th
250
300
K/
300
1
180°
120°
90°
60°
30°
0.
Maximum Average On-State
Power Loss (W)
90°
30°
K/W
0.4
K/W
0.5
K/W
0.8 K
/W
150
100
1.2 K/W
50
0
0
20
40
60
80 100 120 140 160 180 200
50
25
Average On-State Current (A)
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average
On-State Power Loss (W)
500
DC
180°
120°
90°
60°
30°
450
400
350
300
250
200
RMS limit
Ø
150
Conduction period
100
ST183S Series
TJ = 125 °C
50
0
Maximum Average On-State
Power Loss (W)
500
450
400
R
350
0.1
th
SA
=
0.
8
K/
W
0.1
6
0.2 K/W
K/W
0.3
K/W
0.4 K
0.5 K /W
/W
0.8 K/W
1.2 K/W
300
250
200
150
100
50
K/
W
-Δ
R
0
0
50
100
150
200
250
300
Average On-State Current (A)
350
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Aug-17
Document Number: 94369
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
4500
1
4000
Steady state value
RthJC = 0.105 K/W
(DC operation)
ZthJC - Transient Thermal
Impedance (K/W)
Peak Half Sine Wave
On-State Current (A)
At any rated load condition and with
rated VRRM applied following surge
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3500
3000
2500
0.1
0.01
ST183S Series
ST183S Series
0.001
0.001
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
5000
250
Qrr - Maximum Reverse
Recovery Charge (µC)
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
4500
Peak Half Sine Wave
On-State Current (A)
0.01
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
4000
3500
3000
2500
A
00
=5
A
00
=3
I TM
0A
= 20
ST183S Series
TJ = 125 °C
200
I TM
I TM
150
I TM =
100 A
100
ITM = 50 A
50
ST183S Series
2000
0.01
0
0.1
1
0
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
160
10 000
Irr - Maximum Reverse Recovery
Current (A)
Instantaneous On-State Current (A)
20
ST183S Series
TJ = 125 °C
1000
TJ = 25 °C
A
00
= 5 00 A
I TM = 3 A
I TM 200
=
A
I TM = 100
M
IT
0A
=5
140
120
100
80
I TM
60
40
ST183S Series
TJ = 125 °C
20
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 22-Aug-17
Document Number: 94369
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
1000
1500
1000
200
500
100
50 Hz
2500
3000
5000
ST183S Series
Sinusoidal pulse
TC = 60 °C
tp
Peak On-State Current (A)
Peak On-State Current (A)
10 000
100
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500
1000
1000
50 Hz
100
400
1500
2500
200
3000
5000
ST183S Series
Sinusoidal pulse
TC = 85 °C
tp
100
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
200
50 Hz
500
1000
3000
1500
1000
400
100
2500
5000
100
10 000
tp
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
Peak On-State Current (A)
Peak On-State Current (A)
10 000
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
100
400
1000
2500
500
50 Hz
200
1500
3000
100
5000
10 000
tp
ST183S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 50 A/µs
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
10 000
2500
50 Hz
400
1000 500
200
100
1500
3000
5000
100
10 000
tp
ST183S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 100 A/µs
10
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000
1000
2500
500
400
200
100
1500
3000
100
5000
tp
10 000
ST183S Series
Trapezoidal pulse
TC = 85 °C
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 22-Aug-17
Document Number: 94369
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
100 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
10 000
1
2
5
10
0.5
1000
0.3
0.2
0.1
100
ST183S Series
Sinusoidal pulse
tp
ST183S Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
5
1000
0.3
0.5
10
2
1
0.2
0.1
100
tp
10
10
10
100
1000
10
10 000
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
IGD
0.1
0.001
0.01
TJ = 40 °C
VGD
TJ = 25 °C
1
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(b)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
Device: ST183S Series
0.1
1
(2)
(3) (4)
Frequency limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 22-Aug-17
Document Number: 94369
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST183SP Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
ST
18
3
S
08
P
F
K
0
P
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn-off
5
-
S = compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base 3/4" 16UNF-2A
8
-
9
-
10
-
Reapplied dV/dt code (for tq test condition) dV/dt - tq combinations available
dV/dt (V/µs) 200
tq code
FL
tq (µs) 15
0 = eyelet terminals
20
FK
(gate and auxiliary cathode leads)
1 = fast-on terminals
(gate and auxiliary cathode leads)
11
-
None = standard production
-
P = lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95077
Revision: 22-Aug-17
Document Number: 94369
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 ± 10
(8.41 ± 0.39)
White gate
238.5 ± 10
(9.39 ± 0.39)
Red shrink
75 (2.95)
MIN.
White shrink
Ø 28.5 (1.12)
MAX.
28.5 (1.12)
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
SW 32
3/4"-16UNF-2A
35 (1.38)
MAX.
0° to 15°
4 MAX.
38 MAX.
Fast-on terminals
AMP. 280000-1
REF-250
23 MIN.
Flexible lead
C.S. 35 mm2
(0.054 s.i.)
Document Number: 95077
Revision: 19-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
