VS-ST203C Series
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Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
IT(AV)
370 A
VDRM/VRRM
1000 V, 1200 V
VTM
1.72 V
ITSM at 50 Hz
5260 A
• Induction heating
ITSM at 60 Hz
5510 A
• All types of force-commutated converters
IGT
200 mA
TC/Ths
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
IT(RMS)
ITSM
I2t
TEST CONDITIONS
VALUES
Ths
Ths
A
55
°C
700
A
25
°C
50 Hz
5260
60 Hz
5510
50 Hz
138
60 Hz
126
VDRM/VRRM
tq
Range
TJ
UNITS
370
A
kA2s
1000 to 1200
V
20 to 30
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST203C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
10
1000
1100
12
1200
1300
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
100 µs
180° el
50 Hz
860
750
1340
1160
5620
5020
400 Hz
840
706
1400
1220
2940
2590
1000 Hz
700
580
1350
1170
1750
1520
2500 Hz
430
340
980
830
910
Recovery voltage Vr
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
50
Heatsink temperature
-
40
Equivalent values for RC circuit
55
47/0.22
V
-
40
55
A/μs
40
47/0.22
A
780
50
Rise of on-state current dI/dt
UNITS
55
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
700
5260
t = 10 ms
t = 8.3 ms
I2t
A
°C
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
UNITS
55 (85)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum I2t for fusing
VALUES
370 (140)
5510
A
4420
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
4630
138
126
98
kA2s
89
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
1380
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
1.72
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.17
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.22
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.92
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.83
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
dI/dt
maximum
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
minimum
Maximum turn-off time
TEST CONDITIONS
VALUES
UNITS
1000
A/μs
0.8
20
μs
30
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate currrent required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d % = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
- 40 to 125
TStg
- 40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.017
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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130
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
Ø
90
Conduction angle
80
70
60
180°
30°
50
60°
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
90° 120°
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
110
100
90
Ø
80
Conduction period
70
60
50
DC
40
30
40
30°
150
100
50
200
250
0
100
Average On-State Current (A)
90°
180°
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1000
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
90
Ø
80
Conduction period
70
60
50
60°
40
DC
30°
90°
30
120°
180°
Maximum Average On-State
Power Loss (W)
130
Maximum Allowable
Heatsink Temperature (°C)
120°
20
0
180°
120°
90°
60°
30°
900
800
700
600
RMS limit
500
400
Ø
300
Conduction angle
200
ST203C..C Series
TJ = 125 °C
100
0
20
0
50
100
200
150
250
300
350
0
400
100 150 200 250 300 350 400 450
50
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
110
100
90
Ø
Conduction angle
80
70
60
50
180°
40
30
30°
60°
90°
Maximum Average On-State
Power Loss (W)
1400
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
60°
DC
180°
120°
90°
60°
30°
1200
1000
800
RMS limit
600
Ø
Conduction period
400
ST203C..C Series
TJ = 125 °C
200
120°
0
20
0
100
200
300
400
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
500
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
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5000
1
At any rated load condition and with
rated VRRM applied following surge
ST203C..C Series
ZthJ-hs - Transient Thermal
Impedance (K/W)
Peak Half Sine Wave
On-State Current (A)
4500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
3500
3000
2500
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST203C..C Series
2000
1
10
0.001
0.001
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
3500
3000
2500
ST203C..C Series
2000
0.01
0.1
1
Qrr - Maximum Reverse Recovery Charge
(µC)
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
4000
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10
250
ITM = 500 A
ST203C..C Series
TJ = 125 °C
ITM = 300 A
200
ITM = 200 A
150
100
ITM = 100 A
50
ITM = 50 A
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
160
Irr - Maximum Reverse Recovery
Current (A)
Instantaneous On-State Current (A)
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
5500
4500
0.1
Square Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5000
0.01
ST203C..C Series
1000
TJ = 25 °C
TJ = 125 °C
ITM = 500 A
140
ITM = 300 A
120
ITM = 200 A
100
ITM = 100 A
ITM = 50 A
80
60
40
ST203C..C Series
TJ = 125 °C
20
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
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10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
1000
500
200
400
1500
1000
50 Hz
2500
3000
5000
ST203C..C Series
Sinusoidal pulse
TC = 40 °C
tp
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
400
500
1500
1000
2500
3000
5000
10 000
100
10
100
1000
50 Hz
200 100
1000
tp
100
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
10 000
10
100
Pulse Basewidth (µs)
ST203C..C Series
Sinusoidal pulse
TC = 55 °C
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
50 Hz
400
200
1000
1000
2500
1500
100
500
3000
5000
100
10 000
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
tp
Peak On-State Current (A)
Peak On-State Current (A)
10 000
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
50 Hz
100
1000
1000
200
500
2500
1500
3000
5000
100
10 000
tp
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
1000
2500
50 Hz
100
400
500
200
1500
3000
5000
100
10 000
tp
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
10
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
50 Hz
400
1000
100
500
200
1500
2500
3000
5000
100
10 000
tp
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
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100 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
1
1000
0.3
0.2
4
2
10
0.5
0.1
100
ST203C..C Series
Sinusoidal pulse
tp
ST203C..C Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
10
1000
3
0.5
1
0.3
5
2
0.2
100
0.1
tp
10
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
10
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(a)
(b)
TJ = 40 °C
1
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
Device: ST203C..C Series
0.1
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
20
3
C
12
C
H
H
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn-off
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (TO-200AB)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
tq code
10
-
0 = eyelet terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
CK DK EK
20
tq (µs) 25
CJ DJ EJ FJ*
CH DH EH FH HH
30
(gate and auxiliary cathode unsoldered leads) * Standard part number.
All other types available only on request.
1 = fast-on terminals
(gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = fast-on terminals
(gate and auxiliary cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
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Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G = Gate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
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Document Number: 91000
