VS-ST223C..C Series
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Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
A-PUK (TO-200AB)
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
IT(AV)
390 A
VDRM/VRRM
400 V, 800 V
VTM
1.58 V
• Induction heating
ITSM at 50 Hz
5260 A
• All types of force-commutated converters
ITSM at 60 Hz
5510 A
IGT
200 mA
TC/Ths
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
745
A
25
°C
5850
60 Hz
6130
50 Hz
171
60 Hz
156
Range
TJ
UNITS
390
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 800
V
10 to 30
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST223C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
100 µs
180° el
50 Hz
930
800
1430
1220
5870
400 Hz
910
770
1490
1300
3120
2740
1000 Hz
780
650
1430
1260
1880
1640
2500 Hz
490
400
1070
920
1000
Recovery voltage Vr
Voltage before turn-on Vd
Heatsink temperature
50
VDRM
VDRM
VDRM
50
55
V
-
40
47/0.22
A
860
50
40
Equivalent values for RC circuit
5240
50
Rise of on-state current dI/dt
UNITS
55
A/μs
40
47/0.22
55
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
Maximum peak on-state voltage
A
55 (85)
°C
745
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
UNITS
390 (150)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
VALUES
180° conduction, half sine wave
Double side (single side) cooled
5850
6130
A
4920
5150
Sinusoidal half wave,
initial TJ = TJ maximum
171
156
121
100 % VRRM
reapplied
I2t
t = 0.1 to 10 ms, no voltage reapplied
VTM
kA2s
110
1710
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
1.58
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.05
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.09
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.88
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.82
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
VALUES
SYMBOL
TEST CONDITIONS
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
0.78
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Maximum turn-off time
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
MIN. MAX.
UNITS
A/μs
μs
10
30
Revision: 13-Sep-17
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VS-ST223C..C Series
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to +125
TStg
-40 to +150
RthJ-hs
RthC-hs
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.017
0.011
0.011
120°
0.019
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 13-Sep-17
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VS-ST223C..C Series
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1 30
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R thJ- hs (D C ) = 0 .1 7 K / W
120
110
100
90
C o nd uc tio n A ng le
80
70
60
30°
6 0°
50
90°
1 2 0°
40
180 °
30
0
50
100
150
20 0
2 50
3 00
M a x im u m A llo w a b le H e a t sin k T e m p e rat u re (° C )
M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (°C )
130
ST 2 2 3 C ..C S e rie s
(D o ub le Sid e C o o le d )
R thJ- hs (D C ) = 0 .0 8 K/ W
1 20
1 10
1 00
90
C o ndu ction Pe rio d
80
70
30°
60
60°
50
90°
1 2 0°
40
1 8 0°
30
DC
20
0
A v e ra g e O n -st a t e C u rre n t (A )
A v e ra g e O n -st a te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1000
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R t hJ- hs (D C ) = 0 .1 7 K / W
12 0
11 0
10 0
90
80
C o ndu ctio n Pe rio d
70
60
30 °
60°
50
90°
40
1 20°
30
180 °
DC
20
0
50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0
Maximum Average On -state Power Loss (W )
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
13 0
180°
120°
90°
60°
30°
800
600
C o nduc tio n A ng le
200
ST223C..C Series
TJ = 125°C
0
0
Maxim um Average O n-sta te Power Loss (W )
M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( °C )
1 00
90
C o nduc tion An gle
70
30°
60°
50
90°
120 °
1 8 0°
40
30
20
0
10 0
200
3 00
300
400
500
1400
S T 2 2 3 C ..C S e rie s
(D o u b le S id e C o o le d )
R th J-hs (D C ) = 0 .0 8 K / W
60
200
Fig. 5 - On-State Power Loss Characteristics
1 30
80
100
Average On -state Current (A)
Fig. 2 - Current Ratings Characteristics
1 10
RM S Lim it
400
A v e ra g e O n -s ta t e C u rre n t (A )
1 20
10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00
4 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
5 00
DC
180°
120°
90°
60°
30°
1200
1000
800
RMS Limit
600
400
C o nd uc tio n Pe rio d
200
ST223C..C Series
TJ = 125°C
0
0
100 200 300 400 500 600 700 800
Average O n-state Curren t (A)
Fig. 6 - On-State Power Loss Characteristics
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VS-ST223C..C Series
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At Any Rated Load Condition An d W ith
Rated V RRM Applied Followin g Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
5000
4500
4000
3500
3000
ST223C..C Series
2500
1
10
1 00
1
Tr a n sie n t Th e rm a l Im p e d a n c e Z thJ-hs (K/ W )
Peak Half Sine W ave On -state Current ( A)
5500
Vishay Semiconductors
ST 2 2 3 C ..C S e rie s
0 .1
S t e a d y S ta t e V a lu e
R thJ-h s = 0 .1 7 K/ W
(S in g le Sid e C o o le d )
R thJ-hs = 0 .0 8 K/ W
(D o u b le S id e C o o le d )
0 .0 1
0 .0 0 1
0 .0 0 1
3500
3000
S T2 2 3 C ..C S e r ie s
1
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µC )
P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A )
4000
0.1
P u lse T ra in D u ra tio n (s)
I TM = 5 00 A
S T 2 2 3 C ..C S e rie s
TJ = 1 2 5 °C
2 00
30 0 A
20 0 A
1 50
1 00 A
1 00
50 A
50
0
0
20
40
60
80
1 00
R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000
16 0
1000
TJ = 25°C
TJ = 125°C
ST223C..C Series
100
0
2
4
6
8
10
In sta ntaneous O n-state Voltage (V )
Fig. 9 - On-State Voltage Drop Characteristics
M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A )
In st anta neous On-state Current (A)
10
2 50
M a x im u m N o n R e p e t it iv e S urg e C u rre n t
V e rsu s P u lse T ra in D ura t io n . C o n t ro l
5500
O f C o n d u c t io n M a y N o t Be M a in ta in e d .
In it ia l TJ = 1 2 5° C
5000
N o V o lta g e R e a p p lie d
R a te d V RRMR e a p p lie d
4500
2000
0.01
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
6000
2500
0 .1
S q ua re W a v e P u lse D u rat io n (s)
N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
(D C O p e ra tio n )
0 .0 1
IT M = 50 0 A
14 0
30 0 A
12 0
20 0 A
10 0 A
10 0
50 A
80
60
40
ST 2 2 3 C ..C S e rie s
TJ = 1 2 5 °C
20
0
0
20
40
60
80
10 0
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s)
Fig. 12 - Reverse Recovered Current Characteristics
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P e a k O n - st a t e C u rre n t (A )
1 E4
Snubbe r circ uit
R s = 4 7 o hm s
C s = 0.22 µF
V D = 80 % V D RM
Snubb er c ircuit
R s = 4 7 o hm s
C s = 0. 22 µ F
V D = 80 % V D RM
1 50 0
200
4 00
100 0 5 00
1 00 5 0 Hz
1 50 0
2 50 0
1 E3
400 20 0
1 00 0 50 0
100
50 Hz
2 50 0
3 00 0
3 00 0
5 00 0
1 0 00 0
ST2 23 C.. C Serie s
Sinuso idal pulse
TC = 40°C
tp
1 E2
1E1
1 E2
5 00 0
1 E3
tp
10 00 0
1E4
ST2 23 C.. C Se ries
Sinuso idal pulse
TC = 55°C
1 E1 1E 1
1E2
1 E3
1E4
P u lse Ba se w id t h (µ s)
P u lse Ba se w id t h (µ s)
Fig. 13 - Frequency Characteristics
P e a k O n -sta t e C u rre n t (A )
1E4
Snubbe r circ uit
R s = 4 7 o hm s
C s = 0.22 µF
V D = 8 0 % V D RM
Snu bbe r c irc uit
R s = 4 7 o hm s
C s = 0.22 µF
V D = 80% V D RM
1E3
2 50 0
15 0 0 10 00 5 00
400 2 00 10 0
50 Hz
2 50 0
3 00 0
3 00 0
5 00 0
1E2
1 50 0
10 00 5 00
400 2 00 1 0 0
5 00 0
10 0 00
ST2 23 C..C Series
Trape zoidal pulse
TC = 55°C
di/dt = 50A /µs
1 00 00
ST22 3C ..C Se rie s
Tra pe zoidal pulse
TC = 40°C
di/dt = 5 0A /µ s
tp
1E1
1 E1
50 Hz
1 E2
1 E3
tp
1E4
1 E1
1 E2
1E3
1E4
P u lse Ba se w id t h (µ s)
P u lse B ase w idt h (µ s)
Fig. 14 - Frequency Characteristics
P e a k O n - sta t e C u rre n t (A )
1E4
Snubbe r circ uit
R s = 4 7 o hm s
C s = 0.2 2 µF
V D = 80% V D RM
Snubb er c ircu it
R s = 47 o hm s
C s = 0 .22 µF
V D = 80 % V D RM
1E3
25 0 0
1 50 0
1 0 00 500
10 0
4 00 20 0
5 0 Hz
2 50 0
3 00 0
4 00 2 0 0
1 00
50 Hz
5 00 0
1 00 0 0
ST223 C. .C Se ries
Tra pezo idal pulse
TC = 40°C
di/d t = 1 00A /µs
tp
1E1
1 E1
1 000 5 00
3 000
5 00 0
1E2
1 50 0
1 E2
1E 3
ST223 C. .C Se ries
Trap ezo id al p ulse
TC = 55°C
di/dt = 10 0A /µs
10 00 0
tp
1E4
1 E1
1E 2
1E3
1E4
P u lse Ba se w id t h (µ s)
P u lse B ase w id t h (µ s)
Fig. 15 - Frequency Characteristics
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1E 5
ST22 3C. .C Se ries
Re cta ngular pulse
di/d t = 5 0A/µs
P e ak O n -sta t e C ur re n t (A )
tp
1E 4
0.5
1E 3
1
2
4
10
2 0 jo ules per pulse
20 jo ule s p er pulse
5
2
1
0 .3
0. 2
0.5
0. 3
0.1
0. 2
0 .1
1E 2
tp
1E 1
1 E1
10
ST223 C ..C Se ries
Sinuso id al p ulse
1E2
1 E3
1 E1
1 E4
1E 2
1E3
1E4
P u lse B ase w id t h (µ s)
P u lse B a se w idt h (µ s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Re c t a n g ula r g a t e p u lse
a ) R e c o m m e n d e d lo a d lin e fo r
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
b ) Re c o m m e n d e d lo a d lin e f o r
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
10
t r< =1 µ s
(1)
(2)
(3)
(4)
PGM
PGM
PGM
PGM
=
=
=
=
1 0W ,
2 0W ,
4 0W ,
6 0W ,
tp
tp
tp
tp
=
=
=
=
20 m s
10 m s
5m s
3 .3 m s
(a )
(b )
Tj=2 5 °C
1
Tj=-40 °C
Tj=1 25 °C
In st an t a n e o us G a te V o lt a g e ( V )
1 00
(1)
(2)
(3 ) ( 4 )
VGD
IG D
0 .1
0 .0 0 1
0 .0 1
D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0 .1
1
10
1 00
In sta n t a n e o u s G at e C u rr e n t (A )
Fig. 17 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
22
3
C
08
C
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn off
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case A-PUK (TO-200AB)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
10
-
dV/dt - tq combinations available
dV/dt (V/µs)
10
0 = eyelet term.
12
(gate and aux. cathode unsoldered leads) tq (µs) 15
18
1 = fast-on term.
20
(gate and aux. cathode unsoldered leads)
25
30
2 = eyelet term.
tq code
(gate and aux. cathode soldered leads)
20
50
100
200
400
CN
CM
CL
CP
CK
---
DN
DM
DL
DP
DK
---
EN
EM
EL
EP
EK
---
FN*
FM
FL*
FP
FK
---
--HL
HP
HK
HJ
HH
* Standard part number.
All other types available only on request.
3 = fast-on term.
(gate and aux. cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
Revision: 13-Sep-17
Document Number: 93672
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G = Gate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95074
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
