VS-ST230C04C1

VS-ST230C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 410 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS A-PUK (TO-200AB) • DC motor controls • Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 410 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V, 1800 V, 2000 V VTM 1.69 V IGT 90 mA TJ -40 °C to +125 °C Package A-PUK (TO-200AB) Circuit configuration Single SCR • AC controllers        MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 780 A 25 °C 5700 60 Hz 5970 50 Hz 163 60 Hz 149 Typical TJ UNITS 410 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 μs -40 to +125 °C IDRM/IRRM, MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST230C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 30 Revision: 27-Sep-17 Document Number: 94398 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled t = 10 ms No voltage reapplied 5700 100 % VRRM  reapplied 4800 t = 10 ms t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t A °C 780 t = 8.3 ms No voltage reapplied 5970 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM  reapplied 163 148 115 t = 0.1 to 10 ms, no voltage reapplied 1630 VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.92 VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.88 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.81 Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 VTM IH Maximum (typical) latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 105 High level value of threshold voltage Maximum holding current A 5000 Low level value of threshold voltage Maximum on-state voltage UNITS 55 (85) DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 410 (165) 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 27-Sep-17 Document Number: 94398 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 10.0 2.0 TJ = TJ maximum, tp  5 ms 3.0 TJ = TJ maximum, tp  5 ms 20 IGD DC gate voltage not to trigger VGD A V TJ = - 40 °C 180 - TJ = 25 °C 90 150 40 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 °C TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 5.0 TJ = 125 °C DC gate current not to trigger MAX. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = - 40 °C VGT TYP. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g A-PUK (TO-200AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.015 0.017 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.036 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94398 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series 130 Vishay Semiconductors ST230C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30° 70 60° 90° 60 120° 180° 50 40 0 40 80 120 160 200 240 280 320 Average On-state Current (A) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST230C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 80 Conduction Period 70 60 30° 50 60° 90° 40 30 120° 180° DC 20 0 100 200 300 400 500 Average On-state Current (A) ST230C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 80 Conduction Angle 70 30° 60 60° 90° 50 120° 40 30 180° 20 0 100 200 300 400 500 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 110 100 90 Conduction Period 80 70 30° 60 60° 90° 50 120° 40 180° 30 DC 20 0 100 200 300 400 500 600 700 800 Average On-state Current (A) 1100 180° 120° 90° 60° 30° 1000 900 800 700 RMS Limit 600 500 400 Conduction Angle 300 ST230C..C Series T J = 125°C 200 100 0 0 100 200 300 400 500 600 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics 600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Fig. 2 - Current Ratings Characteristics 130 ST230C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Fig. 1 - Current Ratings Characteristics 130 1400 DC 180° 120° 90° 60° 30° 1200 1000 800 RMS Limit 600 Conduction Period 400 ST230C..C Series T J = 125°C 200 0 0 200 400 600 800 1000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94398 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series 5500 Vishay Semiconductors 5000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125°C 4500 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com 4000 3500 3000 2500 ST230C..C Series 2000 1 10 100 6500 6000 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm Reapplied 5000 4500 4000 3500 3000 2500 ST230C..C Series 2000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 Tj = 25°C Tj = 125°C 1000 ST230C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) 0.1 R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 ST230C..C Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94398 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Instantaneous Gate Voltage (V) 100 10 Vishay Semiconductors (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr