VS-ST280C Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB))
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
A-PUK (TO-200AB)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
IT(AV)
500 A
VDRM/VRRM
400 V, 600 V
VTM
1.36 V
IGT
90 mA
TJ
-40 °C to +125 °C
Package
A-PUK (TO-200AB)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
960
A
25
°C
7850
60 Hz
8220
50 Hz
308
60 Hz
281
Typical
TJ
UNITS
500
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 600
V
100
μs
- 40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST280C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
06
600
700
30
Revision: 27-Sep-17
Document Number: 94400
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VS-ST280C Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side(single side) cooled
960
No voltage
reapplied
100 % VRRM
reapplied
6600
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
°C
7850
t = 10 ms
I2t
A
55 (85)
t = 10 ms
t = 8.3 ms
No voltage
reapplied
8220
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
308
281
218
t = 0.1 to 10 ms, no voltage reapplied
3080
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.84
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.50
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.47
Ipk = 1050 A, TJ = 125 °C, tp = 10 ms sine pulse
1.36
Maximum holding current
IH
Maximum (typical) latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
200
VT(TO)1
VTM
A
6900
Low level value of threshold voltage
Maximum on-state voltage
UNITS
500 (185)
DC at 25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000 (300)
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
Revision: 27-Sep-17
Document Number: 94400
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280C Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
TJ = 25 °C
IGT
TJ = - 40 °C
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
W
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
180
-
90
150
40
-
2.9
-
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.2
-
TJ = TJ maximum
UNITS
20
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
mA
V
10
mA
0.30
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TJ
- 40 to 125
TStg
- 40 to 150
RthJ-hs
Maximum thermal resistance,
case to heatsink
TEST CONDITIONS
RthC-hs
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
4900
(500)
N
(kg)
50
g
A-PUK (TO-200AB)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.016
0.016
0.011
0.011
120°
0.019
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94400
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280C Series
130
Vishay Semiconductors
ST280C..C Series
(Single Side Cooled)
R thJ-hs (DC) = 0.17 K/W
120
110
100
90
Conduction Angle
80
30°
70
60°
90°
60
120°
180°
50
40
0
50 100 150 200 250 300 350
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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130
120
110
100
90
ST280C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.08 K/W
Conduction Period
80
70
60
50
40
30
20
30°
60°
90°
120°
180°
DC
0
Average On-state Current (A)
30°
60°
90°
120°
20
180° DC
0
100
200
300
400
500
600
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
40
30
Average On-state Current (A)
100
90
Conduction Angle
30°
20
60°
90°
50
40
30
0
120°
180°
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
1000
1000
180°
120°
90°
60°
30°
900
800
700
RMS Limit
600
500
400
Conduction Angle
300
200
ST280C..C Series
T J = 125°C
100
0
0
100 200 300 400 500 600 700
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
ST280C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.08 K/W
80
70
60
800
Fig. 5 - On-State Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
130
120
110
600
Fig. 4 - Current Ratings Characteristics
ST280C..C Series
(Single Side Cooled)
R thJ-hs (DC) = 0.17 K/W
80
70
60
50
400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
200
1300
DC
1200
180°
1100
120°
1000
90°
900
60°
800
30°
700
600 RMS Limit
500
Conduction Period
400
300
ST280C..C Series
200
T J = 125°C
100
0
0
200
400
600
800 1000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94400
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280C Series
7000
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
3500
3000
ST280C..C Series
1
10
100
8000 Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
7500
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated V RRM Reapplied
7000
6500
6000
5500
5000
4500
4000
ST280C..C Series
3500
3000
0.01
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25°C
TJ = 125°C
1000
ST280C..C Series
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs(K/W)
Fig. 9 - On-State Voltage Drop Characteristics
1
Steady State Value
0.1
R thJ-hs = 0.17 K/W
(Single Side Cooled)
R thJ-hs = 0.08 K/W
(Double Side Cooled)
(DC Operation)
0.01
0.001
0.001
ST280C..C Series
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 27-Sep-17
Document Number: 94400
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST280C Series
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(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr
