VS-ST280S06P1V

VS-ST280S Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 280 A FEATURES • Center amplifying gate • International standard case TO-93 (TO-209AB) • Hermetic metal case with glass-metal seal insulator • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Designed and qualified for industrial level TO-93 (TO-209AB) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IT(AV) 280 A VDRM/VRRM 400 V, 600 V VTM 1.28 V IGT 150 mA TJ -40 °C to +125 °C Package TO-93 (TO-209AB) Circuit configuration Single SCR TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers     MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 280 A 85 °C 440 IT(RMS) ITSM I2t 50 Hz 7850 60 Hz 8220 50 Hz 308 60 Hz 281 VDRM/VRRM tq Typical TJ A kA2s 400/600 V 100 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST280S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM I /I MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE DRM RRM TJ = TJ MAXIMUM mA V 04 400 500 06 600 700 30 Revision: 27-Sep-17 Document Number: 94402 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280S Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current  at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave 440 No voltage reapplied 100 % VRRM reapplied 6600 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 7850 t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms No voltage reapplied 8220 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM  reapplied 310 220 218 t = 0.1 to 10 ms, no voltage reapplied 3100 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.84 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.50 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.47 Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.28 VTM IH Maximum (typical) latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 200 VT(TO)1 Maximum holding current A 6900 Low level value of threshold voltage Maximum on-state voltage UNITS 280 DC at 75 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise  of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNIT S μs BLOCKING PARAMETER Maximum critical rate of rise  of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 27-Sep-17 Document Number: 94402 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280S Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp  5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp  5 ms 3.0 IGT TJ = 25 °C TJ = - 40 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD A V 5.0 Maximum required gate trigger/current/ voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C 180 - 90 150 40 - 2.9 - TJ = 25 °C 1.8 3.0 TJ = 125 °C 1.2 - TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNIT S W 20 TJ = TJ maximum, tp  5 ms TJ = - 40 °C DC gate current required to trigger MAX. mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to case RthJC DC operation 0.105 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads Mounting torque, ± 10 % 31 (275) Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 24.5 (210) N·m (lbf · in) 280 g TO-93 (TO-209AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94402 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280S Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 130 ST280SSeries RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 90 30° 60° 90° 120° 80 0 50 100 150 200 180° 250 130 ST280S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Period 100 90 30° 80 90° 120° 180° DC 70 0 300 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 180° 120° 90° 60° 30° 150 Conduc tion Angle 100 ST280SSeries TJ = 125°C 50 K/ W R 0.4 RMSLimit K/ W ta el -D 200 W K/ 0.3 1 0. 0. 25 K/ W K/ W = 250 0. 16 0. 2 SA 300 h R t Maximum Average On-state Power Loss (W) 60° K/ W 0.6 K/ W 0.8 K /W 1.2 K /W 0 0 50 100 150 200 250 300 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 500 W K/ K/ W 0. 16 K/ W 0. 2 K/ W 0.3 K/ W 0.4 K/ W -D ta el R Conduc tion Period 150 03 0. 250 200 RMS Limit K/ W = 300 0. 12 SA 350 0. 08 W K/ 400 h R t DC 180° 120° 90° 60° 30° 450 06 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.6 K /W ST280S Series TJ = 125°C 100 50 1 K/ W 0 0 50 100 150 200 250 300 350 400 450 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94402 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280S Series 7000 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST280SSeries 3500 3000 1 10 7000 Pea k Half Sine Wave On-sta te Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST280S Series 3500 3000 100 1 Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ= 25°C TJ = 125°C 1000 ST280SSeries 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 ST280SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 27-Sep-17 Document Number: 94402 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST280S Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr