VS-ST300C20L0

VS-ST300CL Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 560 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case B-PUK (TO-200AC) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls B-PUK (TO-200AC) • Controlled DC power supplies • AC controllers PRIMARY CHARACTERISTICS IT(AV) 560 A VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V, 1800 V, 2000 V VTM 2.18 V IGT 100 mA TJ -40 °C to +125 °C Package B-PUK (TO-200AC) Circuit configuration Single SCR         MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 560 A 55 °C 1115 A 25 °C 50 Hz 8000 60 Hz 8380 50 Hz 320 60 Hz 292 VDRM/VRRM kA2s 400 to 2000 tq Typical TJ A V 100 µs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST300C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 VRSM, MAXIMUM IDRM/IRRM MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ V MAXIMUM mA 500 50 Revision: 27-Sep-17 Document Number: 94405 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300CL Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current  at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled 8000 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 1115 t = 10 ms I2t A 55 (75) t = 10 ms t = 8.3 ms No voltage reapplied 8380 100 % VRRM reapplied 7040 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 320 292 226 t = 0.1 to 10 ms, no voltage reapplied 3200 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.97 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.74 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.73 Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 207 VT(TO)1 Maximum on-state voltage A 6730 Low level value of threshold voltage Maximum holding current UNITS 560 (275) DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise  of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 27-Sep-17 Document Number: 94405 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300CL Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM IGT DC gate current required to trigger 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp  5 ms 3.0 IGD DC gate voltage not to trigger VGD V TJ = - 40 °C 200 - TJ = 25 °C 100 200 50 - TJ = 25 °C TJ = 125 °C DC gate current not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = TJ maximum Maximum gate current/  voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM  anode to cathode applied UNITS W 20 TJ = TJ maximum, tp  5 ms TJ = - 40 °C VGT MAX. TYP. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 2.5 - 1.8 3.0 1.1 - mA V 10.0 mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled °C 0.11 DC operation double side cooled 0.05 DC operation single side cooled 0.011 DC operation double side cooled 0.006 Mounting force, ± 10 % Approximate weight Case style UNITS See dimensions - link at the end of datasheet K/W 9800 (1000) N (kg) 250 g B-PUK (TO-200AC) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94405 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300CL Series ST300C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.11 K/W 120 110 100 90 Conduction Angle 80 70 30° 60 60° 90° 120° 50 180° 40 30 0 100 200 300 400 500 Maximum Allowable Heatsink Temperature (°C) 130 Vishay Semiconductors 130 ST300C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.05 K/W 120 110 100 90 Conduction Period 80 70 60 30° 60° 50 90° 40 120° 180° 30 DC 20 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics 130 ST300C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.11 K/W 120 110 100 90 80 Conduction Period 70 60 30° 50 60° 40 90° 120° 30 180° 20 0 DC 100 200 300 400 500 600 700 Maximum Average On-state Power Loss (W) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 1600 180° 120° 90° 60° 30° RMS Limit 1400 1200 1000 800 600 Conduction Angle 400 ST300C..L Series T J = 125 °C 200 0 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST300C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.05 K/W 120 110 100 90 Conduction Angle 80 70 60 30° 50 40 60° 90° 120° 30 180° 20 0 200 400 600 800 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 1800 DC 1600 180° 120° 1400 90° 60° 1200 30° 1000 RMS Limit 800 Conduction Period 600 400 ST300C..L Series T J = 125 °C 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94405 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300CL Series 7500 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6500 6000 5500 5000 4500 4000 3500 ST300C..L Series 3000 1 10 100 8000 7500 7000 6500 6000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 125 °C No Voltage Reapplied Rated Vrrm Reapplied 5500 5000 4500 4000 3500 ST300C..L Series 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25 °C TJ = 125 °C 1000 ST300C..L Series 100 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr