VS-ST300SPbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
• Threaded studs
ISO M24 x 1.5
TO-118 (TO- 209AE)
UNF
3/4"-16UNF-2A
or
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
IT(AV)
300 A
VDRM/VRRM
400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
VTM
1.28 V
IGT
200 mA
TJ
-40 °C to +125 °C
Package
TO-118 (TO-209AE)
Circuit configuration
Single SCR
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
300
A
75
°C
470
ITSM
I2t
50 Hz
8000
60 Hz
8380
50 Hz
320
60 Hz
292
VDRM/VRRM
400 to 2000
Typical
tq
TJ
A
kA2s
V
100
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST300S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
50
Revision: 27-Sep-17
Document Number: 94406
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VS-ST300SPbF Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
470
No voltage
reapplied
100 % VRRM
reapplied
6730
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
for fusing
I2t
No voltage
reapplied
8380
Sinusoidal half wave,
initial TJ = TJ maximum
320
292
226
t = 0.1 ms to 10 ms, no voltage reapplied
3200
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.97
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.98
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.74
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.73
Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.66
VTM
Maximum holding current
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
207
Low level value of threshold voltage
Maximum on-state voltage
A
7040
100 % VRRM
reapplied
t = 8.3 ms
I2t
°C
8000
t = 10 ms
I2t
A
75
t = 10 ms
t = 8.3 ms
UNITS
300
DC at 64 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
Revision: 27-Sep-17
Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300SPbF Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
IGT
TJ = 25 °C
TJ = -40 °C
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
200
-
100
200
50
-
2.5
-
TJ = 25 °C
1.8
3
TJ = 125 °C
1.1
-
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
UNITS
W
20
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
DC gate current required to trigger
MAX.
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
°C
Maximum thermal resistance, junction to case
RthJC
DC operation
0.10
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.03
Non-lubricated threads
48.5
(425)
N·m
(lbf · in)
535
g
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
TO-118 (TO-209AE)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
0.018
60°
0.025
0.026
30°
0.041
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94406
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300SPbF Series
Vishay Semiconductors
130
ST300S Series
R thJC (DC) = 0.10 K/ W
120
110
Conduction Angle
100
30°
90
60°
90°
120°
180°
80
70
0
50
100
150
200
250
300
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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350
ST300SSeries
RthJC (DC) = 0.10 K/ W
120
110
Conduc tion Period
100
90
80
30°
0
100
03
0.
K/
W
W
K/
el
-D
0.2
K/
W
=
K/
W
ta
R
Maximum Average On-state Power Loss (W)
0.
08
0.
12
RMSLimit
280
500
A
320
DC
400
hS
R t
360
300
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
400
200
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
440
180°
60
Average On-state Current (A)
480
60°
90°
120°
70
240
200
160
Conduc tion Angle
120
80
0.6 K
/
W
1.2 K/
W
ST300SSeries
TJ = 125°C
40
0.3
K/ W
0.4
K/ W
0
0
40
25
80 120 160 200 240 280 320
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
650
DC
180°
550
120°
500
90°
450
60°
30°
400
350
300 RMSLimit
250
200
150
100
50
0
0
100
600
R
th
SA
=
W
K/
0.
08
K/
W
el
-D
K/
W
ta
0.1
2
03
0.
R
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0.2
Conduc tion Period
ST300SSeries
TJ = 125°C
200
300
400
Average On-state Current (A)
K/ W
0.3
K/ W
0.6 K
/
W
1.2 K/ W
500
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300SPbF Series
7500
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Pea k Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7000
6500
6000
5500
5000
4500
4000
ST300S Series
3500
3000
1
10
100
8500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
7500 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
7000
No Voltage Reapplied
Rated VRRM Reapplied
6500
8000
6000
5500
5000
4500
4000
3500
ST300S Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
TJ = 25°C
TJ = 125°C
1000
ST300S Series
100
0
1
2
3
4
5
6
7
8
9
Instantaneous On-state Voltage (V)
Transient Therma l Impedanc e Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.10 K/ W
(DC Operation)
0.1
0.01
ST300S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 27-Sep-17
Document Number: 94406
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST300SPbF Series
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Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr
