VS-ST330C16L0

VS-ST330C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 720 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case E-PUK (TO-200AB) RoHS COMPLIANT • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 E-PUK (TO-200AB) TYPICAL APPLICATIONS • DC motor controls PRIMARY CHARACTERISTICS • Controlled DC power supplies IT(AV) 720 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V VTM 1.96 V • AC controllers IGT 100 mA TJ -40 °C to +125 °C Package E-PUK (TO-200AB) Circuit configuration Single SCR       MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t UNITS 720 A 55 °C 1420 A 25 °C 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM tq VALUES Typical TJ A kA2s 400 to 1600 V 100 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST330C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 VRSM, MAXIMUM IDRM/IRRM MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ V MAXIMUM mA 50 Revision: 27-Sep-17 Document Number: 94407 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current  at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled 9000 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 1420 t = 10 ms I2t A 55 (75) t = 10 ms t = 8.3 ms No voltage reapplied 9420 100 % VRRM reapplied 7920 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 405 370 287 t = 0.1 to 10 ms, no voltage reapplied 4050 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.92 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.58 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.57 Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 262 VT(TO)1 Maximum on-state voltage A 7570 Low level value of threshold voltage Maximum holding current UNITS 720 (350) DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 27-Sep-17 Document Number: 94407 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM IGT DC gate current required to trigger TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp  5 ms 3.0 TJ = TJ maximum, tp  5 ms V TJ = -40 °C 200 - TJ = 25 °C 100 200 TJ = 25 °C IGD TJ = TJ maximum VGD DC gate voltage not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = 125 °C DC gate current not to trigger MAX. 10.0 TJ = 125 °C VGT TYP. TJ = TJ maximum, tp  5 ms TJ = -40 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 9800 (1000) N (kg) 83 g E-PUK (TO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.012 0.011 0.008 0.007 120° 0.014 0.012 0.014 0.013 90° 0.017 0.015 0.019 0.017 60° 0.025 0.022 0.026 0.023 30° 0.043 0.036 0.043 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94407 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330C Series 130 Vishay Semiconductors ST330C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.09 K/ W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 180° 80 70 0 50 100 150 200 250 300 350 400 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 120 110 100 90 80 Conduction Period 70 30° 60 60° 50 90° 120° 40 180° 30 20 DC 10 0 Average On-state Current (A) Average On-state Current (A) Fig. 4 - Current Ratings Characteristics ST330C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/ W 120 110 100 90 Conduction Period 80 70 60 50 40 60° 90° 120° 180° 30° 30 DC 20 0 100 200 300 400 500 600 700 800 900 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Fig. 1 - Current Ratings Characteristics 130 1400 180° 120° 90° 60° 30° 1200 1000 600 Conduction Angle 400 ST330C..C Series TJ = 125°C 200 0 0 100 90 80 Conduction Angle 70 60 30° 50 60° 90° 40 120° 180° 30 20 0 200 400 600 800 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 1000 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Fig. 5 - On-State Power Loss Characteristics ST330C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 110 100 200 300 400 500 600 700 800 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 120 RMS Limit 800 Average On-state Current (A) 130 200 400 600 800 1000 1200 1400 1600 1800 DC 180° 120° 90° 60° 30° 1600 1400 1200 1000 RMSLimit 800 Conduction Period 600 400 ST330C..C Series TJ = 125°C 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94407 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330C Series 8000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330C..C Series 4000 3500 1 10 100 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduc tion May Not Be Maintained. Initial TJ = 125°C 7500 No Voltage Reapplied Rated VRRM Reapplied 7000 8500 6500 6000 5500 5000 4500 4000 ST330C..C Series 3500 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST330C..C Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady State Value RthJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.01 ST330C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94407 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330C Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr