VS-ST330S04P0

VS-ST330SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A FEATURES • Center amplifying gate • International standard case TO-118 (TO-209AE) • Hermetic metal case with ceramic insulator TO-118 (TO- 209AE) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Designed and qualified for industrial level PRIMARY CHARACTERISTICS IT(AV) 330 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V, 2000 V VTM 1.52 V IGT 200 mA TJ -40 °C to +125 °C Package TO-118 (TO-209AE) Circuit configuration Single SCR • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 330 A 75 °C 520 IT(RMS) ITSM I2t 50 Hz 9000 60 Hz 9420 50 Hz 405 60 Hz 370 VDRM/VRRM 400 to 2000 tq Typical TJ A kA2s V 100 µs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST330S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE TJ = TJ MAXIMUM V mA 50 Revision: 27-Sep-17 Document Number: 94409 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current  at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave 520 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 9000 t = 10 ms I2t A 75 t = 10 ms t = 8.3 ms No voltage reapplied 9420 100 % VRRM reapplied 7920 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 405 370 287 t = 0.1 to 10 ms, no voltage reapplied 4050 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.834 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.898 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.687 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.636 Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 262 VT(TO)1 Maximum on-state voltage A 7570 Low level value of threshold voltage Maximum holding current UNITS 330 DC at 75 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise  of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 27-Sep-17 Document Number: 94409 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM IGT DC gate current required to trigger 10.0 2.0 TJ = TJ maximum, tp  5 ms 3.0 TJ = TJ maximum, tp  5 ms V TJ = -40 °C 200 - TJ = 25 °C 100 200 TJ = 25 °C IGD TJ = TJ maximum VGD DC gate voltage not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = 125 °C DC gate current not to trigger MAX. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = -40 °C VGT TYP. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 50 - 2.5 - 1.8 3 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs Mounting torque, ± 10 % DC operation 0.10 Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Approximate weight Case style °C See dimension - link at the end of datasheet K/W TO-118 (TO-209AE) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94409 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series Vishay Semiconductors ST330S Series RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 80 180° 70 0 50 100 150 200 250 300 130 Maximum Allowable Case Temperature (°C) 130 350 ST330S Series RthJC (DC) = 0.10 K/ W 120 110 100 Conduc tion Period 90 30° 80 60° 90° 120° 70 180° DC 60 0 100 200 300 400 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 480 400 elt -D a 0.2 K/ W RMSLimit 280 K/ W K/ W W K/ 320 0. 12 03 0. 360 0. 08 = 180° 120° 90° 60° 30° 440 A hS R t R Maximum Average On-state Power Loss(W) Maximum Allowable Case Temperature (°C) www.vishay.com 240 200 Conduction Angle 160 120 ST330SSeries TJ = 125°C 80 40 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 50 100 150 200 250 300 25 350 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 650 600 550 DC 180° 120° 90° 60° 30° 03 0. W K/ 0. 08 = K/ W 0.1 2K /W ta el -D R 400 350 SA th 500 450 R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.2 300 RMSLimit 250 200 Conduction Period 150 ST330SSeries TJ = 125°C 100 50 K/ W 0.3 K/ W 0.4 K/ W 0.6 K /W 1.2 K/ W 0 0 100 200 300 400 500 Average On-state Current (A) 25 600 50 75 100 125 Maximum Allowable Ambient Temp erature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94409 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 8000 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 7500 7000 6500 6000 5500 5000 4500 ST330S Series 4000 3500 1 10 100 9000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapp lied 7000 Rated VRRM Reapplied 6000 5000 4000 ST330SSeries 3000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25 °C Tj = 125 °C ST330S Series 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST330SSeries 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 27-Sep-17 Document Number: 94409 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST330SPbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr