VS-ST333C..C Series
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Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case E-PUK (TO-200AB)
E-PUK (TO-200AB)
• High surge current capability
• Low thermal impedance
• High speed performance
PRIMARY CHARACTERISTICS
Package
E-PUK (TO-200AB)
Circuit configuration
Single SCR
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IT(AV)
720 A
VDRM/VRRM
400 V, 800 V
VTM
1.96 V
ITSM at 50 Hz
11 000 A
ITSM at 60 Hz
11 500 A
• Induction heating
IGT
200 mA
• All types of force-commutated converters
TC/Ths
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
1435
A
25
°C
11 000
60 Hz
11 500
50 Hz
605
60 Hz
553
Range
TJ
UNITS
720
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 800
V
10 to 30
μs
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST333C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
50
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
UNITS
100 µs
180° el
50 Hz
1630
1420
2520
2260
7610
400 Hz
1630
1390
2670
2330
4080
3600
1000 Hz
1350
1090
2440
2120
2420
2100
2500 Hz
720
550
1450
1220
1230
Recovery voltage Vr
Voltage before turn-on Vd
50
50
VDRM
VDRM
VDRM
Equivalent values for RC circuit
50
40
55
10/0.47
40
A
1027
50
Rise of on-state current dI/dt
Heatsink temperature
6820
V
55
40
10/0.47
A/µs
55
°C
/µF
10/0.47
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
A
55 (75)
°C
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1435
11 000
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
UNITS
720 (350)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
VALUES
180° conduction, half sine wave
Double side (single side) cooled
11 500
A
9250
9700
Sinusoidal half wave,
initial TJ = TJ maximum
605
553
428
100 % VRRM
reapplied
kA2s
391
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
6050
Maximum peak on-state voltage
VTM
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
1.96
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.91
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.93
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.58
High level value of forward slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.58
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
SYMBOL
dI/dt
TEST CONDITIONS
VALUES
MIN. MAX.
TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Maximum turn-off time
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
1000
UNITS
A/µs
1.1
µs
10
30
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VS-ST333C..C Series
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/µs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to +125
TStg
-40 to +150
Maximum thermal resistance, junction to heatsink
RthJ-hs
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.09
DC operation double side cooled
0.04
DC operation single side cooled
0.020
DC operation double side cooled
0.010
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
9800
(1000)
N
(kg)
83
g
E-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.010
0.011
0.007
0.007
120°
0.012
0.012
0.012
0.013
90°
0.015
0.015
0.016
0.017
60°
0.022
0.022
0.023
0.023
30°
0.036
0.036
0.036
0.037
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
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VS-ST333C..C Series
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130
ST333C..C Series
(Single Side Cooled)
Rth J- hs (DC) = 0.09 K/W
120
110
100
90
C o nd uc tio n A ng le
80
70
60
50
30°
60°
40
90°
30
120°
180°
20
0
100
200
300
400
500
600
Maxim um Allowable Heatsin k Tem perature (°C)
Maximum Allowable Heatsink Temperature (°C)
130
ST333C..C Series
( Double Side Cooled )
Rth J-hs (DC) = 0.04 K/W
120
110
100
90
C o ndu ctio n Pe riod
80
70
30°
60
60°
50
90°
40
120°
180°
30
DC
20
0
Average On -state Current (A)
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2 2 00
ST 3 3 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R th J-hs ( D C ) = 0 .0 9 K / W
1 20
1 10
1 00
90
80
Co nd uc tio n P e rio d
70
60
50
30°
40
6 0°
90°
12 0°
30
20
0
1 80°
DC
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W )
M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C )
1 30
2 0 00
1 8 0°
1 2 0°
90°
60°
30°
1 8 00
1 6 00
1 4 00
1 0 00
8 00
C o ndu ctio n A ng le
6 00
4 00
ST 3 3 3 C ..C S e r ie s
TJ = 1 2 5°C
2 00
0
0
100
90
80
C o nd uctio n A ng le
60
50
30°
60 °
40
90 °
30
1 2 0°
20
1 8 0°
10
0
2 00
4 00
60 0
800
A v e ra g e O n - st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
1 00 0
M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )
ST 3 3 3 C ..C S e r ie s
(D o ub le Sid e C o o le d )
R thJ-h s (D C ) = 0 .0 4 K /W
70
400
60 0
80 0
1 00 0
Fig. 5 - On-State Power Loss Characteristics
130
110
20 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
120
R M S Lim it
1 2 00
A v e ra g e O n -st a te C u rre n t (A )
M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (°C )
200 400 600 800 1000 1200 1400 1600
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
10 0 0
800
600
400
200
0
DC
1 8 0°
1 2 0°
90°
60°
30°
R M S L im it
C o ndu ctio n Pe rio d
S T3 3 3 C ..C Se rie s
TJ = 1 2 5°C
0
20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 6 - On-State Power Loss Characteristics
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VS-ST333C..C Series
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0 .1
At An y Rated L oad Con dition And W ith
Rated V RR M Applied Following Surge.
In itial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
9500
9000
8500
8000
7500
7000
6500
6000
5500
ST333C..C Series
5000
4500
1
10
100
T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )
Peak Half Sine W ave O n-state Current (A)
10000
Vishay Semiconductors
S T3 3 3 C ..C Se r ie s
S te a d y St a t e V a lu e
R th J-hs = 0 .0 9 K /W
(S in gle Sid e C o o le d )
0 .0 1
R thJ-h s = 0 .0 4 K /W
(D o u b le S id e C o o le d )
(D C O p e ra t io n )
0 .0 0 1
0 .0 0 1
0 .0 1
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
7000
6000
ST333C..C Series
1
Maximum Reverse Recovery Charge - Q rr (µC)
Peak Half Sine Wave O n-state Curren t (A)
8000
0.1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
280
260
240
220
200
180
160
140
ST333C..C Series
TJ = 125 °C
120
100
80
10
20
30
40
50
60
70
80
90 100
Fig. 11 - Reverse Recovered Charge Characteristics
10000
180
T = 25°C
J
T = 125°C
J
ST333C..C Series
100
0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5
Instan tan eous O n-state V oltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
Instantaneous On-state Current (A)
I TM = 50 0 A
3 00 A
2 00 A
10 0 A
50 A
300
Rate O f Fall O f O n-state Current - di/dt (A/µs)
Pulse T rain Duration (s)
1000
10
320
Maxim um Non Repetitive Surge Current
V ersus Pulse Train Duration. C ontrol
11000
O f Con duction May Not Be M ain tained.
Initial TJ = 125°C
10000
No Voltage Reapplied
Rated V RR MReapplied
9000
4000
0.01
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
12000
5000
0. 1
Sq u a re W a v e P u ls e D ur at io n (s)
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
IT M = 5 00 A
3 00 A
20 0 A
1 00 A
50 A
160
140
120
100
80
ST 3 3 3 C ..C S e rie s
TJ = 1 2 5 ° C
60
40
20
10
20
30
40
50
60
70
80
9 0 1 00
R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)
Fig. 12 - Reverse Recovery Current Characteristics
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P e a k O n -st a te C u rre n t (A )
1 E4
1 000
4 00 20 0
50 0
1 00
50 Hz
50 0
1 50 0
20 0
1 00
50 H z
15 0 0
Snubb er c ircu it
R s = 1 0 o hm s
C s = 0 .47 µF
V D = 80 % V D RM
25 00
1 E3
4 00
1 000
3 00 0
Snubb er circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
V D = 80 % V D RM
2 50 0
3 00 0
50 00
tp
1 E2
1 E1
1E2
5 00 0
ST33 3 C..C Serie s
Sin uso idal pulse
TC = 40°C
1E3
1 E4
ST33 3C ..C Serie s
Sinuso idal pulse
TC = 55°C
tp
1 E1
1E2
1E3
1E4
Pu lse B a se w id th (µ s)
P ulse B a se w id th (µ s)
Fig. 13 - Frequency Characteristics
P e a k O n - st a t e C ur re n t (A )
1E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
V D = 80 % V D RM
100 0 50 0
15 00
20 0 0
2 5 00
1E3
40 0 2 00 10 0
50 Hz
10 00 50 0
Snubbe r circuit
R s = 1 0 o hm s
C s = 0.47 µF
V D = 80 % V D RM
3 0 00
10 0
40 0 2 00
1 5 00
20 00
2 50 0
3 00 0
ST3 33 C.. C Se ries
Trap ezo id al p ulse
TC = 4 0°C
di/d t = 50 A/µs
5 00 0
tp
1E2
1 E1
1E2
1E3
50 Hz
tp
50 00
1 E4
1E 1
ST33 3C. .C Se ries
Trapezo idal p ulse
TC = 55°C
di/dt = 1 00A /µs
1 E2
1 E3
1 E4
P u lse Ba se w id th (µs)
P u lse Ba se w id t h (µ s)
Fig. 14 - Frequency Characteristics
P e a k O n - st a te C u rre n t (A )
1 E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
V D = 80 % V DR M
5 00
4 00 200 10 0
5 0 Hz
4 00 2 00
15 00
20 00
1 E3
2 50 0
1 50 0
20 00
2 50 0
tp
1E3
ST333 C.. C Se ries
Trapezo id al p ulse
TC = 55°C
di/dt = 10 0A /µs
3 00 0
ST33 3 C..C Serie s
Trape zoidal pulse
TC = 40°C
d i/dt = 100 A/µs
50 00
1 E2
5 0 Hz
10 0 0
Snubb er c ircuit
R s = 10 o hm s
C s = 0 .47 µ F
V D = 80 % V D RM
3 00 0
1 E2
1 E1
10 0
50 0
100 0
tp
5 00 0
1E4
1E1
1E 2
1 E3
1 E4
P u lse Ba se w id th (µ s)
P u lse B ase w id t h (µ s)
Fig. 15 - Frequency Characteristics
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1E4
20 jo ule s pe r p ulse
P e a k O n - sta t e C u rre n t (A )
3
5
ST3 33 C Se ries
Rec tang ula r pulse
di/dt = 50A /µs
10
tp
2
2 0 jou les p er pulse
10
5
3
1
1E3
2
0.5
1
0 .3
0 .5
0.2
0.4
0.3
1E2
0.2
tp
1E1
1E1
ST33 3C ..C Se ries
Sinuso idal pulse
1E2
1 E1
1 E14E 4
1E3
1E2
1 E3
1E4
P u lse Ba se w id t h (µ s)
P u lse B ase w id t h (µ s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Re c t a n g ula r g a t e p u lse
a ) R e c o m m e n d e d lo a d lin e fo r
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
b ) Re c o m m e n d e d lo a d lin e f o r
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
10
t r< =1 µ s
(1)
(2)
(3)
(4)
PGM
PGM
PGM
PGM
=
=
=
=
1 0W ,
2 0W ,
4 0W ,
6 0W ,
tp
tp
tp
tp
=
=
=
=
20 m s
10 m s
5m s
3 .3 m s
(a )
(b )
Tj=- 40 °C
Tj=12 5 °C
1
Tj=25 °C
In st a n ta n e o u s G at e V o lt a ge ( V )
1 00
(1)
(2)
(3 ) ( 4 )
VGD
IG D
0 .1
0 .0 0 1
0 .0 1
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0 .1
1
10
1 00
In sta n t a n e o u s G at e C u rr e n t (A )
Fig. 17 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
33
3
C
08
C
H
K
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = fast turn off
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case E-PUK (TO-200AB)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
10
-
dV/dt - tq combinations available
50
100
200 400
dV/dt (V/µs) 20
10 CN DN EN
--0 = eyelet terminal
12 CM DM EM
FM*
-15
CL
DL
EL
FL*
HL
(gate and aux. cathode unsoldered leads) tq (µs)
18 CP DP EP
FP
HP
1 = fast-on terminal
20 CK DK EK
FK
HK
25
---FJ
HJ
(gate and aux. cathode unsoldered leads)
30
----HH
2 = eyelet terminal
* Standard part number.
(gate and aux. cathode soldered leads)
All other types available only on request.
tq code
3 = fast-on terminal
(gate and aux. cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95075
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
C
G
14.1/15.1
(0.56/0.59)
A
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
Note:
A = Anode
C = Cathode
G = Gate
40.5 (1.59) DIA. MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95075
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
