VS-ST333SP Series
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Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
TO-118 (TO- 209AE)
• High speed performance
• Compression bonding
PRIMARY CHARACTERISTICS
• Designed and qualified for industrial level
IT(AV)
330 A
VDRM/VRRM
400 V, 800 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VTM
1.96 V
ITSM at 50 Hz
11 000 A
TYPICAL APPLICATIONS
ITSM at 60 Hz
11 520 A
• Inverters
IGT
200 mA
• Choppers
TJ
-40 °C to +125 °C
TC
75 °C
Package
TO-118 (TO-209AE)
Circuit configuration
Single SCR
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
330
A
75
°C
518
ITSM
I2t
50 Hz
11 000
60 Hz
11 520
50 Hz
605
60 Hz
550
VDRM/VRRM
A
kA2s
400 to 800
V
tq
15
μs
TJ
-40 to +125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST333S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
04
400
500
08
800
900
50
Revision: 28-Aug-17
Document Number: 94377
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VS-ST333SP Series
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Vishay Semiconductors
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
180° el
ITM
100 µs
180° el
50 Hz
840
600
1280
1040
5430
4350
400 Hz
650
450
1280
910
2150
1560
1000 Hz
430
230
1090
730
1080
720
2500 Hz
140
60
490
250
400
Recovery voltage VR
Voltage before turn-on VD
Case temperature
50
50
VDRM
VDRM
VDRM
50
-
50
Equivalent values for RC circuit
75
10/0.47
V
-
50
75
10/0.47
A
190
50
Rise of on-state current dI/dt
UNITS
A/μs
50
75
°C
/μF
10/0.47
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current at case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 63 °C case temperature
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
UNITS
330
A
75
°C
518
11 000
No voltage
reapplied
100 % VRRM
reapplied
VALUES
11 520
A
9250
Sinusoidal half wave,
initial TJ = TJ maximum
9700
605
550
430
100 % VRRM
reapplied
390
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
6050
Maximum peak on-state voltage
VTM
ITM = 1810 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
1.96
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.91
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.92
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.58
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.58
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
VALUES
UNITS
1000
A/μs
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
1.0
Maximum turn-off time
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs
15
μs
Revision: 28-Aug-17
Document Number: 94377
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VS-ST333SP Series
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Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES
UNITS
500
V/μs
50
mA
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TEST CONDITIONS
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to +125
TStg
-40 to +150
°C
Maximum thermal resistance, junction to case
RthJC
DC operation
0.10
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.03
Non-lubricated threads
48.5
(425)
N·m
(lbf · in)
535
g
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
TO-118 (TO-209AE)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
0.018
60°
0.025
0.026
30°
0.041
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 28-Aug-17
Document Number: 94377
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VS-ST333SP Series
Vishay Semiconductors
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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ST333SSeries
RthJC (DC) = 0.10 K/ W
120
110
Conduc tion Angle
100
30°
90
60°
90°
120°
80
180°
70
0
50
100
150
200
250
300
350
130
ST333SSeries
RthJC (DC) = 0.10 K/ W
120
110
Conduc tion Period
100
90
80
30°
90°
120°
180°
60
0
100
200
300
400
DC
500
600
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
500
A
=
/W
1K
0.0
ta
el
-D
R
RMS Limit
250
hS
R t
300
W
K/
350
K/
W
0.
12
K/
W
0.1
6K
/
0.2 W
K/
W
03
0.
400
0.
08
W
K/
180°
120°
90°
60°
30°
450
06
0.
Maximum Average On-state Power Loss (W)
60°
70
0.3
K/ W
200
Conduction Angle
150
100
0.5
K/ W
ST333S Series
TJ = 125°C
50
0
0
50
100
150
200
250
300
Average On-state Current (A)
350
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
700
K/
W
300 RMSLimit
0.2
K/ W
K/
W
R
Conduc tion Period
200
ta
el
-D
0.1
2
W
K/
400
01
0.
K/
W
=
500
0.
03
0.
06
SA
th
DC
180°
120°
90°
60°
30°
600
R
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
0.3
K/ W
0. 5 K
/
W
ST333S Series
TJ = 125°C
100
0
0
100
200
300
400
500
Average On-state Current (A)
600
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 28-Aug-17
Document Number: 94377
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VS-ST333SP Series
10000
Vishay Semiconductors
Transient Thermal Impedance Z thJC (K/ W)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
8000
7000
6000
5000
ST333SSeries
4000
1
10
100
1
Steady State Value
R thJC = 0.10 K/ W
(DC Operation)
0.1
0.01
ST333S Series
0.001
0.001
11000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
10000 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
9000
No Voltage Reapplied
Rated VRRM Reapplied
8000
7000
6000
5000
ST333S Series
4000
0.01
0.1
1
Pulse Train Duration (s)
TJ = 25°C
TJ = 125°C
1000
ST333SSeries
100
2
3
4
5
10
320
I
TM
300
280
260
= 500 A
300 A
200 A
100 A
50 A
240
220
200
180
160
ST333S Series
TJ = 125 °C
140
120
100
80
10
20 30
40 50
60 70 80
90 100
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
Instantaneous On-state Current (A)
10000
1
1
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
0
0.1
Fig. 8 - Thermal Impedance ZthJC Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
Peak Half Sine Wave On-state Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
Square Wave Pulse Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
180
160
140
ITM = 500 A
300 A
200 A
100 A
50 A
120
100
80
ST333S Series
TJ = 125 °C
60
40
20
10
20 30
40 50
60
70 80
90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 28-Aug-17
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VS-ST333SP Series
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Vishay Semiconductors
Peak On-state Current (A)
1E4
1000
1E3
500
400 200 100 50 Hz
1500
2000
2500
50 Hz
400 200 100
1500
Snubb er circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% VDRM
3000
1E2
5000
1E2
Snubb er circuit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% VDRM
2000
2500
3000
ST333SSeries
Sinusoidal pulse
TC = 50°C
tp
1E1
1E1
500
1000
1E3
1E4
1E
4
ST333SSeries
Sinusoida l pulse
TC = 75°C
tp
1E1
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
1E3
1000
500
100
400 200
500
1500
Snub b er circ uit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
2000
2500
3000
1E2
50 Hz
1000
1E2
1E4
1E4
1E3
50 Hz
Snub ber c ircuit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1500
2000
2500
ST333SSeries
Trap ezoidal p ulse
TC = 50°C
di/ d t = 50A/ µs
1E1
1E1
200 100
400
ST333SSeries
Tra pezoidal pulse
TC = 75°C
di/ dt = 50A/µs
3000
1E1
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Peak On-state Current (A)
1E4
1E3
400
50 Hz
400
Snub ber circ uit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
2000
2500
1500
2000
1E3
ST333SSeries
Trapezoidal pulse
TC = 75°C
di/ dt = 100A/ µs
2500
ST333SSeries
Trapezoid al pulse
TC = 50°C
di/ dt = 100A/ µs
tp
3000
1E4
1E4
100 50 Hz
Snub ber c irc uit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1000
3000
1E2
200
500
1000
1E1
1E1
100
500
1500
1E2
200
1E1
1E1
tp
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 28-Aug-17
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Peak On-state Current (A)
1E5
ST333SSeries
Rectangular pulse
d i/ dt = 50A/ µs
tp
20 joules p er pulse
1E4
2
3
5
10
20 joules p er pulse
1
0.5
1E3
2
0.5
0.3
0.4
0.3
1E2
0.2
ST333SSeries
Sinusoidal pulse
tp
10
1
0.2
1E1
1E1
3
5
1E2
1E3
1E1
1E
1
1E4
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Rec tangular gate pulse
a) Rec ommended load line for
rated di/ dt : 20V, 10ohms; tr