VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 960 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Low profile hockey PUK
current-carrying capability
to
RoHS
COMPLIANT
increase
• Designed and qualified for industrial level
E-PUK (TO-200AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IT(AV)
960 A
VDRM/VRRM
400 V, 600 V
VTM
1.60 V
IGT
100 mA
• DC motor controls
• Controlled DC power supplies
• AC controllers
TJ
-40 °C to +125 °C
Package
E-PUK (TO-200AB)
Circuit configuration
Single SCR
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
A
55
°C
1900
A
25
°C
15 000
60 Hz
15 700
50 Hz
1130
60 Hz
1030
Typical
TJ
UNITS
960
50 Hz
VDRM/VRRM
tq
VALUES
A
kA2s
400 to 600
V
100
µs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST380C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
04
400
500
06
600
700
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT TJ = TJ
V
MAXIMUM mA
50
Revision: 27-Sep-17
Document Number: 94410
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VS-ST380C Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
VALUES
960 (440)
A
55 (75)
°C
1900
15 000
No voltage
reapplied
15 700
100 % VRRM
reapplied
13 200
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
1130
1030
800
11 300
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.85
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.88
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.25
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.24
Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.60
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
725
VT(TO)1
Maximum on-state voltage
A
12 600
Low level value of threshold voltage
Maximum holding current
UNITS
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
Revision: 27-Sep-17
Document Number: 94410
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
PGM
Maximum peak gate power
PG(AV)
Maximum average gate power
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
IGT
DC gate current required to trigger
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
TJ = -40 °C
200
-
100
200
TJ = 25 °C
IGD
TJ = TJ maximum
VGD
DC gate voltage not to trigger
V
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
A
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
UNITS
W
20
TJ = TJ maximum, tp 5 ms
TJ = 125 °C
VGT
MAX.
TYP.
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
50
-
2.5
-
1.8
3.0
1.1
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.09
DC operation double side cooled
0.04
DC operation single side cooled
0.02
K/W
0.01
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
9800
(1000)
N
(kg)
83
g
E-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.010
0.011
0.007
0.007
120°
0.012
0.012
0.012
0.013
90°
0.015
0.015
0.016
0.017
60°
0.022
0.022
0.023
0.023
30°
0.036
0.036
0.036
0.037
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94410
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST380C Series
130
Vishay Semiconductors
ST380C..C Series
(Single Side Cooled)
RthJ-hs(DC) = 0.09 K/ W
120
110
100
90
Conduction Angle
80
30°
70
60°
90°
60
120°
180°
50
40
0
100 200
300
400
500 600
700
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
www.vishay.com
130
ST380C..C Series
(Double Side Cooled)
RthJ-hs(DC) = 0.04 K/ W
120
110
100
90
Conduction Period
80
70
60
30°
60°
50
90°
40
120°
180°
30
DC
20
0
110
100
90
Conduction Period
80
70
60
30°
50
60°
90°
120°
40
30
180°
20
0
200
400
600
DC
800
1000 1200
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
ST380C..C Series
(Single Side Cooled)
RthJ-hs(DC) = 0.09 K/ W
120
110
100
90
Conduction Angle
80
70
60
30°
50
60°
90°
40
120°
180°
30
20
0
200
400 600
800 1000 1200 1400
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
2000
180°
120°
90°
60°
30°
1800
1600
1400
RMS Limit
1200
1000
800
Conduction Angle
600
ST380C..C Series
TJ = 125°C
400
200
0
0
200
400
600
800 1000 1200 1400
Fig. 5 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
ST380C..C Series
(Double Side Cooled)
R thJ-hs(DC) = 0.04 K/ W
1600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
120
1200
2000
Average On-state Current (A)
130
800
Fig. 4 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
130
400
Average On-state Current (A)
Average On-state Current (A)
2800
DC
180°
120°
90°
60°
30°
2400
2000
1600
RMSLimit
1200
Conduction Period
800
ST380C..C Series
TJ = 125°C
400
0
0
400
800
1200
1600
2000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94410
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST380C Series
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
www.vishay.com
14000
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
13000
Initial TJ = 125°C
@60 Hz 0.0083 s
12000
@50 Hz 0.0100 s
11000
10000
9000
8000
7000 ST380C..C Series
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
Initial TJ = 125°C
13000
No Voltage Reapplied
12000
Rated VRRM Reapplied
14000
11000
10000
9000
8000
ST380C..C Series
7000
6000
0.01
6000
1
15000
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25°C
TJ= 125°C
1000
ST380C..C Series
100
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs (K/ W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
ST380C..C Series
Steady State Value
0.01
R thJ-hs = 0.09 K/ W
(Single Side Cooled)
R thJ-hs = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 27-Sep-17
Document Number: 94410
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr
