VS-ST700CL Series
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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 910 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case B-PUK (TO-200AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
B-PUK (TO-200AC)
• Controlled DC power supplies
PRIMARY CHARACTERISTICS
IT(AV)
910 A
VDRM/VRRM
1200 V, 1600 V, 1800 V, 2000 V
VTM
1.80 V
IGT
100 mA
TJ
-40 °C to +125 °C
Package
B-PUK (TO-200AC)
Circuit configuration
Single SCR
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
VALUES
UNITS
910
A
55
°C
1857
A
25
°C
50 Hz
15 700
60 Hz
16 400
50 Hz
1232
60 Hz
1125
VDRM/VRRM
1200 to 2000
tq
Typical
TJ
A
kA2s
V
150
μs
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VOLTAGE RATINGS
TYPE
NUMBER
VS-ST700CL
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
80
Revision: 27-Sep-17
Document Number: 94413
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VS-ST700CL Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
VALUES
A
55 (85)
°C
1857
No voltage
reapplied
15 700
100 % VRRM
reapplied
13 200
No voltage
reapplied
16 400
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
1232
1125
871
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.00
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.13
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.40
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.35
Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.80
VTM
IH
Typical latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
795
12 321
VT(TO)1
Maximum holding current
A
13 800
Low level value of threshold voltage
Maximum on-state voltage
UNITS
910 (355)
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
150
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
80
mA
Revision: 27-Sep-17
Document Number: 94413
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST700CL Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
VALUES
TEST CONDITIONS
Typ.
TJ = TJ maximum, tp 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
TJ = TJ maximum, tp 5 ms
IGT
TJ = 25 °C
TJ = -40 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TJ = TJ maximum
A
V
5.0
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
TJ = 125 °C
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
UNITS
W
20
TJ = -40 °C
DC gate current required to trigger
Max.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.073
DC operation double side cooled
0.031
DC operation single side cooled
0.011
DC operation double side cooled
K/W
0.006
Mounting force, ± 10 %
Approximate weight
Case style
°C
See dimensions - link at the end of datasheet
14 700
(1500)
N
(kg)
255
g
B-PUK (TO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94413
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST700CL Series
130
Vishay Semiconductors
ST700C..L Series
(Single Side Cooled)
RthJ-hs(DC) = 0.073 K/ W
120
110
100
90
Conduction Angle
80
70
30°
60°
90°
60
120°
180°
50
40
0
100
200
300
400
500
600
700
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
www.vishay.com
130
ST700C..L Series
(Double Side Cooled)
RthJ-hs(DC) = 0.031 K/ W
120
110
100
90
Conduction Period
80
70
30°
60
90°
120°
40
180°
30
DC
20
0
100
90
Conduction Period
80
70
60
50
30°
40
60°
90°
30
120°
180°
20
0
200
400
600
DC
800
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
ST700C..L Series
(Single Side Cooled )
RthJ-hs(DC) = 0.073 K/ W
110
90
Conduction Period
70
30°
60
60°
90°
50
120°
40
180°
30
DC
20
0
400
800
1200
1600
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
2000
Maximum Average On-state Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
2000
RMSLimit
1600
1200
Conduction Angle
800
ST700C..L Series
TJ = 125°C
400
0
0
200
400
600
800
1000 1200
Fig. 5 - On-State Power Loss Characteristics
100
80
2000
Average On-state Current (A)
ST700C..L Series
(Double Side Cooled)
RthJ-hs(DC) = 0.031 K/ W
110
1600
180°
120°
90°
60°
30°
2400
1000
Fig. 2 - Current Ratings Characteristics
120
1200
2800
Average On-state Current (A)
130
800
Fig. 4 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
400
Average On-state Current (A)
Average On-state Current (A)
130
60°
50
3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
RMSLimit
1500
Conduction Period
1000
ST700C..L Series
TJ = 125°C
500
0
0
400
800
1200
1600
2000
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94413
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST700CL Series
14000
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
13000
12000
11000
10000
9000
8000
7000
ST700C..L Series
6000
1
10
16000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
14000
Initial TJ = 125°C
No Voltage Reapplied
13000
Rated VRRM Reapplied
12000
15000
11000
10000
9000
8000
7000
ST700C..L Series
6000
0.01
100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25°C
TJ = 125°C
1000
ST700C..L Series
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs (K/ W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
ST700C..L Series
0.01
Steady Sta te Value
R thJ-hs = 0.073 K/ W
(Single Side Cooled)
RthJ-hs = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 27-Sep-17
Document Number: 94413
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST700CL Series
www.vishay.com
Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr