VS-ST733C08LFL1

VS-ST733CL Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 940 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt • International standard case B-PUK (TO-200AC) • High surge current capability • Low thermal impedance • High speed performance B-PUK (TO-200AC) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS Package B-PUK (TO-200AC) Circuit configuration Single SCR TYPICAL APPLICATIONS • Inverters IT(AV) 940 A VDRM/VRRM 400 V, 800 V VTM 1.63 V ITSM at 50 Hz 20 000 A • All types of force-commutated converters ITSM at 60 Hz 20 950 A IGT 200 mA   TC/Ths 55 °C • Choppers • Induction heating MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 940 A 55 °C 1900 A 25 °C 50 Hz 20 000 60 Hz 20 950 50 Hz 2000 60 Hz 1820 VDRM/VRRM 400 to 800 tq Range TJ A kA2s V 10 to 20 μs -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST733C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 75 Revision: 13-Sep-17 Document Number: 94378 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180° el UNITS 100 µs 180° el 50 Hz 2200 1900 3580 3100 6800 400 Hz 2050 1660 3600 3130 3750 3240 1000 Hz 1370 1070 2900 2450 2120 1780 2500 Hz 500 370 1220 980 960 Recovery voltage VR Voltage before turn-on VD 50 50 VDRM VDRM VDRM 50 - 40 55 Equivalent values for RC circuit V - 40 10/0.47 A 770 50 Rise of on-state current dI/dt Heatsink temperature 5920 55 10/0.47 A/μs 40 55 °C /μF 10/0.47 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state  current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle,  non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage VALUES A 55 (85) °C 1900 No voltage reapplied 20 000 100 % VRRM reapplied 16 800 No voltage reapplied A 20 950 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied UNITS 940 (350) 17 600 2000 1820 kA2s 1410 1290 I2t t = 0.1 ms to 10 ms, no voltage reapplied VTM ITM = 1700 A, TJ = TJ maximum,  tp = 10 ms sine wave pulse 1.63 kA2s 20 000 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.09 High level value of threshold voltage VT(TO)2 V (I >  x IT(AV)), TJ = TJ maximum 1.20 Low level value of forward slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.32 High level value of forward slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.29 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 m mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise  of turned-on current Typical delay time Maximum turn-off time minimum maximum dI/dt TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt Gate pulse: 20 V 20 , 10 μs 0.5 μs rise time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5  source tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs,  VR = 50 V, tp = 500 μs, dV/dt: see table in device code VALUES UNITS 1000 A/μs 1.5 10 μs 20 Revision: 13-Sep-17 Document Number: 94378 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,  higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES UNITS 500 V/μs 75 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TEST CONDITIONS 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp  5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6  TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled K/W 0.005 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 14 700 (1500) N (kg) 255 g B-PUK (TO-200AC) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.021 0.021 0.022 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 13-Sep-17 Document Number: 94378 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com 130 ST733C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 110 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 Vishay Semiconductors 100 90 Conduction Angle 80 30° 70 60° 90° 60 120° 50 180° 40 ST733C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 120 110 100 90 Conduction Period 80 70 30° 60 60° 50 90° 120° 40 180° 30 DC 20 0 100 200 300 400 500 600 0 700 Fig. 1 - Current Ratings Characteristics 100 90 Conduction Period 80 70 60 30° 50 60° 90° 40 120° 30 180° DC 20 0 200 400 600 800 180° 120° 90° 60° 30° 2000 1000 Conduction Angle 500 ST733C..L Series TJ = 125°C 0 1000 0 110 100 90 Conduction Angle 80 70 60 30° 50 60° 40 90° 30 120° 180° 400 600 800 1000 1200 1400 Fig. 5 - On-State Power Loss Characteristics 2500 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST733C..L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/W 200 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 120 RMS Limit 1500 Average On-state Current (A) 130 2000 2500 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 110 1500 Fig. 4 - Current Ratings Characteristics ST733C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/W 120 1000 Average On-state Current (A) Average On-state Current (A) 130 500 180° 120° 90° 60° 30° 2000 RMS Limit 1500 1000 Conduction Angle 500 ST733C..L Series TJ = 125°C 0 20 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 13-Sep-17 Document Number: 94378 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 16 000 14 000 12 000 10 000 ST733C..L Series 8000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) ZthJ-hs - Transient Thermal Impedance (K/W) Peak Half Sine Wave On-state Current (A) 18 000 Vishay Semiconductors 18 000 16 000 14 000 12 000 10 000 ST733C..L Series 8000 0.01 0.1 1 Pulse Train Duration (s) Qrr - Maximum Reverse Recovery Charge (μC) Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied TJ = 25 °C 1000 TJ = 125 °C ST733C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 0.01 Steady State Value R thJ-hs = 0.073 K/W (Single Side Cooled) R thJ-hs = 0.031 K/W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 450 I TM = 1500 A ST733C..L Series TJ = 125 °C 400 350 300 1000 A 250 500 A 200 150 100 50 0 10 20 30 40 50 60 70 80 90 100 dIFdt - Rate of Fall of On-State Current (A/μs) Fig. 11 - Reverse Recovered Charge Characteristics Irr - Maximum Reverse Recovery Current (A) Instantaneous On-state Current (A) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10 000 ST733C..L Series Fig. 10 - Thermal Impedance ZthJC Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 20 000 0.1 250 I TM= 1500 A 200 1000 A 150 500 A 100 ST733C..L Series TJ = 125 °C 50 0 10 20 30 40 50 60 70 80 90 100 dIFdt - Rate of Fall of Forward Current (A/μs) Fig. 12 - Reverse Recovered Current Characteristics Revision: 13-Sep-17 Document Number: 94378 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM 1E4 50 Hz 400 200100 1000 1500 2500 3000 1E3 5000 tp ST733C..L Series Sinusoidal pulse TC = 40°C 1E5 Peak On-state Current (A) Peak On-state Current (A) 1E5 1E2 1E3 1E4 400 200 100 50 Hz 1000 1500 2500 1E3 3000 5000 1E2 1E1 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM tp ST733C..L Series Sinusoidal pulse TC = 55 °C 1E2 1E4 1E1 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 13 - Frequency Characteristics 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM tp ST733C..L Series Trapezoidal pulse TC = 40°C di/dt = 50A/μs 1E4 50 Hz 100 400 200 500 1000 1500 2000 2500 3000 1E3 Peak On-state Current (A) Peak On-state Current (A) 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM 1E4 1000 1500 1E3 500 400 50 Hz 200100 2000 2500 3000 5000 1E2 tp ST733C..L Series Trapezoidal pulse TC = 55 °C di/dt = 50 A/μs 1E2 1E1 1E2 1E3 1E1 1E4 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 14 - Frequency Characteristics 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM tp ST733C..L Series Trapezoidal pulse TC = 40°C di/dt = 50A/μs 1E4 500 1000 1500 2000 2500 3000 5000 1E3 400 200 100 50 Hz 1E2 Peak On-state Current (A) Peak On-state Current (A) 1E5 Snubber circuit RS = 10 Ω CS = 0.47 μF VD = 80 % VDRM ST733C..L Series Trapezoidal pulse T = 55 °C di/dt = 50A/μs tp 1E4 500 400 200 100 50 Hz 1000 1500 2000 2500 3000 1E3 1E2 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (μs) Pulse Basewidth (μs) Fig. 15 - Frequency Characteristics Revision: 13-Sep-17 Document Number: 94378 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST733CL Series www.vishay.com Vishay Semiconductors 1E5 tp ST733C..L Series Sinusoidal pulse 1E4 2 3 5 Peak On-state Current (A) Peak On-state Current (A) 1E5 20 joules per pulse 10 1 1E3 0.5 0.4 0.3 1E2 tp 1E4 1E2 1E3 20 joules per pulse 10 5 3 1E3 2 1 0.5 1E2 0.4 0.3 1E1 1E1 ST733C..L Series Rectangular pulse di/dt = 50 A/μs 1E1 1E4 1E1 Pulse Basewidth (μs) 1E2 1E3 1E4 Pulse Basewidth (μs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics (1) PGM = 10 W, tp = 20 ms (2) PGM = 20 W, tp = 10 ms (3) PGM = 40 W, tp = 5 ms (4) PGM = 60 W, tp = 3.3 ms Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 Ω; tr