VS-T20HF220
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Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 2200 V, 20 A
FEATURES
• Electrically isolated base plate
• 2200 VRRM
• Industrial standard packaging
• UL approved file E78996
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• Designed and qualified for industrial level
D-55 (T-module)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
20 A
Type
Modules - diode, high voltage
VRRM
2200 V
Package
D-55 (T-module)
Circuit configuration
Single diode
DESCRIPTION / APPLICATIONS
These series of D-55 (T-modules) use standard recovery
power rectifier diodes. The semiconductors are electrically
isolated from the metal base, allowing common heatsink
and compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls, and solar panel application.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
TC
IF(RMS)
VALUES
UNITS
20
A
85
°C
31
IFSM
I2t
50 Hz
450
60 Hz
470
50 Hz
1015
60 Hz
920
I2t
10 125
VRRM
TJ
A
A2s
A2s
2200
V
-40 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-T20HF220
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 150 °C
mA
22
2200
2250
18
Revision: 05-Jan-18
Document Number: 94709
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VS-T20HF220
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current at case
temperature
Maximum RMS forward current
Maximum
180° conduction, half sine wave
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
I2t
IF(AV)
TEST CONDITIONS
IFSM
I2t
for fusing
Maximum I2t for fusing
I2t
Low level value of threshold voltage
VF(TO)1
High level value of threshold voltage
VF(TO)2
Low level value of forward slope resistance
rf1
High level value of forward slope resistance
rf2
Maximum forward voltage drop
VFM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half
wave, initial
TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
UNITS
20
85
31
450
470
380
400
1015
920
715
650
A
°C
A
10 125
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
(I > x IF(AV)), TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
(I > x IF(AV)), TJ maximum
IFM = 60 A, TJ = 25 °C, tp = 400 μs square pulse
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
0.77
A
A2s
A2s
V
0.89
8.5
m
6.7
1.50
V
VALUES
UNITS
18
mA
3500
V
VALUES
UNITS
-40 to +150
°C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
RMS isolation voltage
VISOL
50 Hz, circuit to base, all terminals shorted
TJ = 25 °C, t = 1 s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and storage
temperature range
Maximum thermal resistance, junction to case
per junction
Maximum thermal resistance, case to heatsink
to heatsink
Mounting torque, ± 10 %
terminals
Approximate weight
Case style
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
RthCS
Mounting surface smooth, flat and greased
M3.5 mounting screws (1)
Non-lubricated
threads
M5 screw terminals
See dimensions - link at the end of datasheet
2.53
K/W
0.2
1.3 ± 10 %
Nm
3 ± 10 %
54
g
D-55 (T-module)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
R CONDUCTION PER JUNCTION
DEVICES
T20HF...
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.29
0.34
0.43
0.64
1.10
0.20
0.35
0.47
0.67
1.11
UNITS
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 05-Jan-18
Document Number: 94709
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-T20HF220
Vishay Semiconductors
Maximum Forward Power Loss (W)
160
150
140
130
120
110
100
90
30°
80
60°
90°
120°
180°
70
60
50
0
10
20
80
60° 120°
90°
180°
DC
70
60
50
40
30
RMS limit
20
10
0
0
10
20
30
40
50
60
70
80
Anode Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
90°
130
120
110
100
90
30°
80
60°
70
120°
DC
180°
60
0
10
20
30
IF(AV) - Average Forward Current (A)
Peak Half Sine Wave Forward Current (A)
IF(AV) - Average Forward Current (A)
500
620
Fig. 2 - Current Ratings Characteristics
75
Maximum Forward Power Loss
Characteristics
30°
90
30
160
30°
60° 90° 180°
120°
50
RMS limit
25
0
0
100
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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10
20
30
40
50
60
Anode Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
450
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
350
300
250
200
150
100
1
10
100
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
520
No Voltage Reapplied
Rated VRRM Reapplied
420
320
220
120
20
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 05-Jan-18
Document Number: 94709
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-T20HF220
Vishay Semiconductors
100
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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100
TJ = 150 °C
TJ = 25 °C
10
TJ = 150 °C
10
1
0.1
0.01
1
TJ = 25 °C
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
500
1000
1500
2000
2500
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Typical Values of Reverse Current vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
T
20
HF
220
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Current rating
4
-
Circuit configuration (see Circuit Configuration table)
5
-
Voltage code x 10 = VRRM
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
Single diode
CIRCUIT CONFIGURATION CODE
HF
CIRCUIT DRAWING
2
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95313
Revision: 05-Jan-18
Document Number: 94709
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D-55 T-Module Diode Standard and Fast Recovery
DIMENSIONS in millimeters (inches)
26 ± 1
(1.02 ± 0.04)
3 ± 0.5
(0.12 ± 0.02)
23.5 ± 0.5
(0.93 ± 0.02)
41 (1.61) max.
11
(0.43)
18
(0.71)
2
27 ± 0.3
(1.06 ± 0.01)
3.9 ± 0.05
(0.15 ± 0.002)
8 ± 0.3
(0.31 ± 0.01)
15 (0.59)
1
M5
30 (1.18)
Note
• 1 = Anode
2 = Cathode
Revision: 21-Apr-17
Document Number: 95313
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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