VS-T70HFL100S05

VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A, 70 A, 85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC® package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved • Designed and qualified for industrial level D-55 (T-module) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. PRIMARY CHARACTERISTICS IF(AV) 40 A, 70 A, 85 A Type Modules - diode, fast VRRM 100 V to 1000 V Package D-55 (T-module) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS I2t T70HFL T85HFL UNITS 40 70 85 A TC 70 70 70 °C 63 110 133 A 50 Hz 475 830 1300 60 Hz 500 870 1370 50 Hz 1130 3460 8550 60 Hz 1030 3160 7810 IF(RMS) IFSM VALUES T40HFL A A2s VRRM Range 100 to 1000 V trr Range 200 to 1000 ns TJ Range -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS_T40HFL.. VS_T70HFL.. VS_T85HFL.. VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE V V VOLTAGE CODE trr CODE 10 S02, S05, S10 100 150 20 S02, S05, S10 200 300 40 S02, S05, S10 400 500 60 S02, S05, S10 600 700 80 S05, S10 800 900 100 S05, S10 1000 1100 IRRM MAXIMUM AT TJ = 25 °C μA 100 Revision: 24-Sep-2021 Document Number: 93184 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current 40 t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t t = 10 ms t = 8.3 ms I2√t for fusing 70 85 70 IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current Maximum T40HFL T70HFL T85HFL 180° conduction, half sine wave IF(AV) t = 10 ms I2√t VALUES TEST CONDITIONS 63 110 133 No voltage reapplied 830 1300 500 870 1370 100 % VRRM reapplied 400 700 1100 420 730 1150 1130 3460 8550 1030 3160 7810 800 2450 6050 730 2230 5520 11 300 34 600 85 500 No voltage reapplied 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied A °C 475 Sinusoidal half wave, initial TJ = TJ maximum UNITS Low level value of threshold voltage VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 0.82 0.87 0.84 High level value of threshold voltage VF(TO)2 TJ = 25 °C, (I > π x IF(AV)) 0.84 0.90 0.86 Low level value of forward slope resistance rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 7.0 2.77 2.15 High level value of forward slope resistance rf2 TJ = 25 °C, (I > π x IF(AV)) 6.8 2.67 2.07 IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.60 1.73 1.55 A A A2s A2√s V mΩ Maximum forward voltage drop VFM V REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL Maximum reverse recovery time trr Maximum reverse recovery charge Qrr T40HFL TEST CONDITIONS (1) T70HFL T85HFL S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290 TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000 200 500 1000 TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 UNITS ns μC Note (1) Tested on LEM 300 A diodemeter tester BLOCKING PARAMETER Maximum peak reverse leakage current RMS isolation voltage SYMBOL TEST CONDITIONS IRRM TJ = 125 °C VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s T40HFL T70HFL T85HFL UNITS 20 mA 3500 V Revision: 24-Sep-2021 Document Number: 93184 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range Storage temperature range Maximum internal thermal resistance, junction to case per module VALUES -40 to +125 TStg -40 to +150 T40HFL UNITS °C 0.85 RthJC T70HFL DC operation 0.53 T85HFL K/W 0.46 Thermal resistance, case to heatsink per module Mounting surface, flat, smooth and greased RthCS base to heatsink Mounting torque ± 10 % TEST CONDITIONS TJ M3.5 mounting screws (1) Non-lubricated threads busbar to terminal 0.2 1.3 ± 10 % M5 screws terminals 3 ± 10 % See dimensions link at the end of datasheet Approximate weight Case style Nm 54 g 19 oz. D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24 T70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19 T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015 UNITS K/W 130 T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 60 120° 180° 50 0 10 20 30 40 50 Maximum Allowa ble Case Temperature (°C) Maximum Allowab le Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 T40HFL.. Series R thJC (DC) = 0.85 K/ W 120 110 100 Conduc tion Period 90 80 30° 60° 70 90° 120° 180° 60 DC 50 0 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Revision: 24-Sep-2021 Document Number: 93184 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series T70HFL.. Series R thJC (DC) = 0.53 K/ W 120 110 100 Conduction Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 50 60 70 80 Maximum Allowable Case Temperature (°C) 130 Vishay Semiconductors 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 140 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics 130 T70HFL.. Series RthJC (DC) = 0.53 K/ W 120 110 100 Conduction Period 90 80 30° 70 60° 90° 120° 60 180° DC 50 0 20 40 60 80 100 120 Maximum Average Forward Power Lo ss (W) Average Forward Current (A) 70 180° 120° 90° 60° 30° 60 50 RMSLimit 40 30 20 Conduc tion Angle 10 T40HFL.. Series TJ= 125°C 0 0 5 10 15 20 25 30 35 40 Average Forward Current (A) Average Forward Current (A) Fig. 4 - Current Ratings Characteristics Fig. 7 - Forward Power Loss Characteristics 130 T85HFL.. Series R thJC (DC) = 0.46 K/ W 120 110 100 Conduc tion Angle 90 80 30° 70 60° 90° 120° 60 180° 50 0 10 20 30 40 50 60 70 80 90 Ma ximum Average Forward Power Lo ss (W) Maximum Allowable Case Temperature (°C) Maximum Allowa ble Case Temperature (°C) Maximum Allowable Case Temp erature (°C) www.vishay.com 90 DC 180° 120° 90° 60° 30° 80 70 60 50 RMS Limit 40 30 Conduc tion Period 20 T40HFL.. Series T J = 125°C 10 0 0 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 5 - Current Ratings Characteristics Fig. 8 - Forward Power Loss Characteristics Revision: 24-Sep-2021 Document Number: 93184 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series 180° 120° 90° 60° 30° 90 80 70 60 RMS Limit 50 40 30 Conduc tion Angle 20 T70HFL.. Series TJ= 125°C 10 0 Maximum Average Forward Power Loss (W) 0 10 20 30 40 50 60 Maximum Average Forward Power Loss (W) 100 Vishay Semiconductors 160 120 100 80 RMSLimit 60 Conduc tion Period 40 T85HFL.. Series TJ = 125°C 20 0 0 70 20 40 60 80 100 120 140 Average Forward Current (A) Average Forward Current (A) Fig. 9 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics 140 DC 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduc tion Period 40 T70HFL.. Series TJ = 125°C 20 0 0 20 40 60 80 100 180° 120° 90° 60° 30° 80 70 RMS Limit 60 50 40 Conduc tion Angle 30 T85HFL.. Series TJ= 125°C 20 10 0 0 10 20 30 40 50 60 70 80 400 350 300 250 200 150 T40HFL.. Series 100 1 10 100 Fig. 13 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forwa rd Current (A) 110 90 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 10 - Forward Power Loss Characteristics 100 450 120 Average Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 140 Peak Half Sine Wave Forwa rd Current (A) Maximum Average Forward Power Loss (W) www.vishay.com 90 Average Forward Current (A) Fig. 11 - Forward Power Loss Characteristics 500 450 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 150 100 0.01 T40HFL.. Series 0.1 1 Pulse Train Duration (s) Fig. 14 - Maximum Non-Repetitive Surge Current Revision: 24-Sep-2021 Document Number: 93184 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series Vishay Semiconductors 800 At Any Ra ted Loa d Cond ition And With Rated V RRM App lied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 700 600 500 400 300 T70HFL.. Series 200 1 10 100 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com 1300 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied 1200 1100 1000 900 800 700 600 500 T85HFL.. Series 400 300 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 125°C No Voltage Reapplied Rated V RRM Reapplied 750 650 550 450 350 250 T70HFL.. Series 150 0.01 0.1 1 Pulse Train Duration (s) Peak Half Sine Wave Forward Current (A) At Any Rated Load Condition And With Rated V RRM Ap p lied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1100 1000 900 800 700 600 500 T85HFL.. Series 400 300 1 10 0.5 I FM= 300A 0.49 220A 172A 0.48 100A 50A 0.47 0.46 T40HFL..S02 T70HFL..S02 TJ = 125 °C 0.45 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Fig. 16 - Maximum Non-Repetitive Surge Current 1200 0.51 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 17 - Maximum Non-Repetitive Surge Current Fig. 19 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (µC) Peak Half Sine Wave Forward Current (A) 850 Fig. 18 - Maximum Non-Repetitive Surge Current Maximum Reverse Rec overy Time - Trr (µs) Fig. 15 - Maximum Non-Repetitive Surge Current 1 Pulse Train Duration (s) 8 7 6 I FM= 300A 220A 172A 100A 50A 5 4 3 2 T40HFL..S02 T70HFL..S02 TJ = 125 °C 1 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 20 - Recovery Charge Characteristics Revision: 24-Sep-2021 Document Number: 93184 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series Vishay Semiconductors 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 T40HFL..S02 T70HFL..S02 TJ = 125 °C 6 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) 1.1 1 I FM= 300A 0.9 220A 172A 100A 0.8 50A 0.7 T40HFL..S05 T70HFL..S05 TJ = 125 °C 0.6 10 28 26 I FM= 300A 220A 172A 100A 50A 24 22 20 18 16 14 12 T40HFL..S05 T70HFL..S05 TJ = 125 °C 10 8 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 24 - Recovery Current Characteristics Maximum Reverse Rec overy Time - Trr (µs) Maximum Reverse Rec overy Time - Trr (µs) Fig. 21 - Recovery Current Characteristics Maximum Reverse Rec overy Current - Irr (A) Maximum Re verse Rec overy Current - Irr (A) www.vishay.com 100 1.8 1.7 I FM= 300A 1.6 200A 1.5 100A 1.4 50A 1.3 1.2 1.1 T40HFL..S10 T70HFL..S10 TJ = 125 °C 1 10 100 Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics 20 18 16 I FM= 300A 220A 172A 100A 50A 14 12 10 8 6 T40HFL..S05 T70HFL..S05 TJ = 125 °C 4 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs) Fig. 23 - Recovery Charge Characteristics Maximum Reverse Re covery Charge - Qrr (µC) Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs) Maximum Reverse Recovery Charge - Qrr (µC) Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs) 40 35 I FM= 300A 200A 30 100A 25 50A 20 15 10 T40HFL..S10 T70HFL..S10 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs) Fig. 26 - Recovery Charge Characteristics Revision: 24-Sep-2021 Document Number: 93184 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series 45 Vishay Semiconductors I FM= 300A 200A 40 100A 35 50A 30 25 20 T40HFL..S10 T70HFL..S10 TJ = 125 °C 15 10 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Current - Irr (A) www.vishay.com 28 26 24 IFM = 300A 200A 100A 50A 22 20 18 16 14 12 10 8 T85HFL..S02 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Fig. 27 - Recovery Current Characteristics Fig. 30 - Recovery Current Characteristics Maximum Reverse Rec overy Time - Trr (µs) 1.2 1.1 1 IFM = 300A 0.9 200A 100A 0.8 50A 0.7 T85HFL..S02 T J = 125°C 0.6 10 100 Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs) Maximum Reverse Rec overy Charge - Qrr (µC) Fig. 28 - Recovery Time Characteristics 25 IFM = 300A 20 200A 100A 15 50A 10 T85HFL..S02 TJ = 125 °C 5 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 29 - Recovery Charge Characteristics 1.3 1.2 IFM = 300A 1.1 200A 1 100A 50A 0.9 T85HFL..S05 TJ = 125°C 0.8 10 100 Ra te Of Fall Of Forward Current - di/ d t (A/ µs) Fig. 31 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Recovery Time - Trr (µs) Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) 30 IFM = 300A 27 200A 24 21 18 100A 50A 15 12 9 T85HFL..S05 TJ = 125°C 6 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs) Fig. 32 - Recovery Charge Characteristics Revision: 24-Sep-2021 Document Number: 93184 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Maximum Reverse Rec overy Charge - Qrr (µC) Maximum Reverse Rec overy Current - Irr (A) 35 IFM = 300A 200A 30 100A 50A 25 20 15 T85HFL..S05 TJ = 125°C 10 10 20 30 40 50 60 70 80 90 100 Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs) Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Time - Trr (µs) 1.9 1.8 IFM = 300A 200A 1.5 100A 1.4 1.3 1.2 50A T85HFL..S10 TJ = 125°C 1.1 1 10 45 200A 40 100A 35 30 50A 25 20 T85HFL..S10 TJ = 125°C 15 10 10 20 30 40 50 60 70 80 90 100 Fig. 35 - Recovery Charge Characteristics 2 1.6 IFM = 300A 50 Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs) Fig. 33 - Recovery Current Characteristics 1.7 55 100 60 IFM = 300A 55 200A 50 100A 45 50A 40 35 30 25 T85HFL..S10 TJ = 125°C 20 15 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs) Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs) Fig. 36 - Recovery Current Characteristics Fig. 34 - Recovery Time Characteristics Peak Forward Current (A) 1E4 tp T40HFL.. Series Trapezoidal Pulse T C = 70 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 tp 1E1 1E1 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse T = 70°C C 1E2 1E3 1E1 1E4 1E1 1E4 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 37 - Frequency Characteristics Revision: 24-Sep-2021 Document Number: 93184 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors 1E4 Peak Forward Current (A) tp T40HFL.. Trapezoidal Pulse TC= 90 °C 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 tp 1E1 1E1 2500 1500 1000 400 200 50 Hz T40HFL.. Series Sinusoidal Pulse TC= 90°C 1E2 1E1 1E1E4 4 E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 38 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 1E3 0.1 0.04 0.02 1E2 0.2 0.4 1 2 4 10 0.4 0.04 0.02 0.01 0.01 1E1 tp 1E0 1E1 T40HFL.. Series Sinusoid al Pulse TJ = 125 °C 1E2 tp 1E3 1E1E4 4 1E1 1E1 1 2 10 4 20 joules per pulse 0.2 0.1 T40HFL.. Series Trapezoidal Pulse TJ= 125°C di/ dt = 50A/ µs 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 39 - Maximum Forward Energy Power Loss Characteristics Peak Forward Current (A) 1E4 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 1E2 tp 1E1 1E1 T70HFL.. Series Sinusoid a l Pulse TC= 70°C 1E2 tp 1E3 1E1 1 1E41E 1E4 2500 1500 1000 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 70°C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 40 - Frequency Characteristics Revision: 24-Sep-2021 Document Number: 93184 10 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Peak Forward Current (A) 1E4 1E3 1E2 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 tp T70HFL.. Series Sinusoidal Pulse TC= 90°C 1E1 1E1 tp 1E2 1E3 2500 1500 1000 400 200 50 Hz T70HFL.. Series Trapezoidal Pulse TC= 90°C 1E41E1 1E4 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 41 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 1E3 1 0.1 0.04 0.02 1E2 20 joules per pulse 10 4 2 1 0.4 0.2 tp 0.02 0.1 0.04 0.2 0.01 T70HFL.. Series Sinusoidal Pulse TJ = 125°C tp 1E0 1E1 10 0.4 0.01 1E1 2 4 1E2 1E3 1E41E 1E4 1E1 1 T70HFL.. Series Trapezoidal pulse T J= 125°C di/ dt = 50A/ µs 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 42 - Maximum Forward Energy Power Loss Characteristics Peak Forward Current (A) 1E4 1E3 20000 10000 5000 2500 1500 1000 400 200 50 Hz 5000 2500 1500 1000 400 200 50 Hz 1E2 tp 1E1 1E1 T85HFL.. Series Sinusoidal Pulse TC= 70°C 1E2 tp 1E3 1E4 1E41E1 1E1 T85HFL.. Series Trapezoidal Pulse T C= 70°C 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 43 - Frequency Characteristics Revision: 24-Sep-2021 Document Number: 93184 11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Peak Forward Current (A) 1E4 1E3 20000 10000 400 5000 2500 1500 1000 200 50 Hz 5000 2500 1500 1000 1E2 tp T85HFL.. Series Sinusoidal Pulse TC= 90°C 1E1 1E1 tp 1E2 1E41E 1E4 1E1 1 1E3 400 200 50 Hz T85HFL.. Series Trapezoidal Pulse T C= 90°C 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 44 - Frequency Characteristics 1E4 Peak Forward Current (A) 20 joules per pulse 20 joules per pulse 10 4 1E3 1 0.4 0.2 0.1 0.04 0.02 0.01 1E2 1E1 4 2 2 0.4 tp 0.01 T85HFL.. Series Trapezoid al Pulse T J= 125°C di/dt = 50A/ µs tp 1E2 1 0.2 0.1 0.04 0.02 T85HFL.. Series Sinusoidal Pulse TJ= 125 °C 1E0 1E1 10 1E3 1E4 1E41E1 1E1 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 45 - Maximum Forward Energy Power Loss Characteristics 10000 Instanta neous Forwa rd Current (A) Instantaneous Forward Current (A) 1000 100 TJ= 25°C TJ= 125°C 10 T40HFL.. Series 1 0.5 1000 100 TJ= 25°C TJ= 125°C 10 T70HFL.. Series 1 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) Fig. 46 - Forward Voltage Drop Characteristics 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Fig. 47 - Forward Voltage Drop Characteristics Revision: 24-Sep-2021 Document Number: 93184 12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Instantaneous Forward Current (A) 10000 1000 TJ= 25°C TJ= 125°C 100 T85HFL.. Series 10 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Transient Thermal Impedanc e ZthJC (K/ W) Fig. 48 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: R thJC = 0.85 K/ W R thJC = 0.53 K/ W R thJC = 0.46 K/ W (DC Operation) T40HFL.. Series T70HFL.. Series T85HFL.. Series 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 49 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- T 40 HFL 100 S10 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Module type 3 - Current rating 4 - Fast recovery diode 5 - Voltage code x 10 = VRRM 6 - trr code 40 = 40 A (average) 70 = 70 A (average) 85 = 85 A (average) S02 = 200 ns S05 = 500 ns S10 = 1000 ns Revision: 24-Sep-2021 Document Number: 93184 13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT Single CIRCUIT CONFIGURATION CODE HFL CIRCUIT DRAWING 2 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95313 Revision: 24-Sep-2021 Document Number: 93184 14 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 26 ± 1 (1.02 ± 0.04) 3 ± 0.5 (0.12 ± 0.02) 23.5 ± 0.5 (0.93 ± 0.02) 41 (1.61) max. 11 (0.43) 18 (0.71) 2 27 ± 0.3 (1.06 ± 0.01) 3.9 ± 0.05 (0.15 ± 0.002) 8 ± 0.3 (0.31 ± 0.01) 15 (0.59) 1 M5 30 (1.18) Note • 1 = Anode 2 = Cathode Revision: 21-Apr-17 Document Number: 95313 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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