VS-U5FX120FA120

VS-U5FX120FA120 www.vishay.com Vishay Semiconductors FRED Pt® Gen 5 Hyperfast Rectifier Diode, 1200 V, 120 A FEATURES • Hyperfast and optimized Qrr • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature • Electrically isolated base plate • Large creepage distance between terminal SOT-227 • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 PRIMARY CHARACTERISTICS VR 1200 V VF (typical) at 60 A, per diode 2.65 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 trr (typical) at 60 A, per diode 46 ns DESCRIPTION / APPLICATIONS IF(DC) per module at TC = 70 °C 120 A Type Modules - diode, FRED Pt® Featuring a unique combination of low conduction and switching losses, the VS-U5FX120FA120 is the right choice for high frequency converters, both soft switched / resonant. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. Package SOT-227 Circuit configuration Two separate diodes, parallel pin-out These modules are specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters, and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 1200 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 70 °C 60 Single pulse forward current per diode IFSM TJ = 25 °C 290 PD TC = 70 °C 304 Any terminal to case, t = 1 min 2500 V -55 to +175 °C MAX. UNITS Maximum power dissipation per module RMS isolation voltage VISOL Operating junction and storage temperature range TJ, TStg A W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR Forward voltage VFM Reverse leakage current IRM TEST CONDITIONS IR = 100 μA MIN. TYP. 1200 - - IF = 60 A - 2.75 3.52 IF = 60 A, TJ = 150 °C - 2.15 - VR = 1200 V - 0.6 80 TJ = 125 °C, VR = 1200 V - 62 - TJ = 150 °C, VR = 1200 V - 220 - V μA Revision: 19-May-2022 Document Number: 96947 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-U5FX120FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr Junction capacitance CT MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 46 - TJ = 125 °C - 91 - - 24 - - 42 - TJ = 25 °C - 1.2 - TJ = 125 °C - 3.5 - VR = 1200 V - 23 - pF MIN. TYP. MAX. UNITS - - 0.69 - - 0.345 - 0.05 - TJ = 25 °C TJ = 125 °C IF = 60 A, diF/dt = 1000 A/μs, VR = 800 V UNITS ns A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance junction to case, per diode TEST CONDITIONS RthJC Thermal resistance junction to case, per module Thermal resistance case to heatsink, per module RthCS Flat, greased surface Weight Mounting torque °C/W - 30 - g Torque per diode - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 240 1 220 180 0.1 150 °C 140 IRM (mA) TJ = 125 °C TJ = 25 °C 160 IF (A) 175 °C TJ = 175 °C TJ = 150 °C 200 120 100 0.01 125 °C 0.001 80 60 0.0001 40 25 °C 20 0 0.00001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 200 400 600 800 1000 1200 VFM (V) VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-May-2022 Document Number: 96947 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-U5FX120FA120 Vishay Semiconductors 180 160 160 140 140 100 100 80 25 °C 40 40 20 20 0 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400 1600 IF - Continuous Forward Current (A) dIF/dt (A/µs) Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Diode) Fig. 6 - Diode Reverse Recovery Time vs. dIF/dt 70 280 240 IF = 60 A, VR = 800 V 60 RMS limit 200 50 160 40 trr (ns) Average Power Loss (W) 125 °C 80 60 60 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 120 80 40 30 125 °C 20 10 25 °C 0 0 0 10 20 30 40 50 60 70 80 0 90 200 400 600 800 1000 1200 1400 1600 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Average Power Loss vs. Average Forward Current Fig. 7 - Diode Reverse Recovery Current vs. dIF/dt 4.5 1000 IF = 60 A, VR = 800 V 4 3.5 125 °C 3 Qrr (µC) CT - Junction Capacitance (pF) IF = 60 A, VR = 800 V 120 120 trr (ns) Allowable Case Temperature (°C) www.vishay.com 100 2.5 2 1.5 1 25 °C 0.5 10 0 1 10 100 1000 0 200 400 600 800 1000 1200 1400 1600 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 5 - Junction Capacitance vs. Reverse Voltage Fig. 8 - Diode Reverse Recovery Charge vs. dIF/dt Revision: 19-May-2022 Document Number: 96947 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-U5FX120FA120 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Junction to Case ORDERING INFORMATION TABLE Device code VS- U5F X 120 F A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - U5F = Gen 5 FRED Pt® family 3 - X = Hyperfast FRED Pt® diode 4 - Current rating per module (120 = 120 A) 5 - F = circuit configuration (two separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment Two separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 19-May-2022 Document Number: 96947 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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