VS-UFB250FA60
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Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 250 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Very low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
VR
600 V
IF(AV) (1) per module at TC = 113 °C
250 A
trr
166 ns
Type
Modules - diode FRED Pt®
Package
SOT-227
The VS-UFB250FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 90 °C
168
Single pulse forward current per diode
IFSM
TC = 25 °C
1300
PD
TC = 90 °C
395
W
Any terminal to case, t = 1 min
2500
V
-55 to +175
°C
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
A
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
UNITS
600
-
-
IF = 100 A
-
1.02
1.19
IF = 100 A, TJ = 175 °C
-
0.87
1.02
VR = VR rated
-
1.3
50
μA
V
TJ = 175 °C, VR = VR rated
-
-
4
mA
VR = 600 V
-
72
-
pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
TJ = 25 °C
TJ = 150 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
MIN.
TYP.
MAX.
UNITS
-
166
-
ns
-
291
-
-
41
-
-
64
-
TJ = 25 °C
-
3.5
-
TJ = 150 °C
-
10.0
-
MIN.
TYP.
MAX.
TJ = 25 °C
TJ = 150 °C
IF = 50 A
dIF/dt = 500 A/μs
VR = 200 V
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
Flat, greased surface
Weight
Mounting torque
Case style
-
-
0.43
-
-
0.215
-
0.05
-
-
30
-
UNITS
°C/W
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
SOT-227
Revision: 10-Sep-2019
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VS-UFB250FA60
Vishay Semiconductors
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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TJ = 175 °C
100
TJ = 25 °C
10
TJ = 150 °C
TJ = 175 °C
100
10
TJ = 150 °C
1
0.1
0.01
0.001
TJ = 25 °C
0.0001
1
0
0.5
1.0
1.5
2.0
0
2.5
100
200
300
400
500
600
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
100
10
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
t1
DC
t2
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
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VS-UFB250FA60
Vishay Semiconductors
180
500
160
450
DC
120
350
100
80
300
250
200
60
Square wave (D = 0.5)
80 % rated VR applied
40
TJ = 25 °C
150
100
20
50
100
0
0
50
100
150
200
250
300
1000
dIF/dt (A/µs)
Current Rating (A)
Fig. 5 - Maximum Current Rating (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
160
14 000
140
12 000
120
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
60
40
DC
8000
6000
40
60
80
100
120
140
TJ = 25 °C
2000
0
20
TJ = 150 °C
4000
20
0
VR = 200 V
IF = 50 A
10 000
RMS limit
100
Qrr (nC)
Forward Power Loss (W)
VR = 200 V
IF = 50 A
TJ = 150 °C
400
140
trr (ns)
Allowable Case Temperature (°C)
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0
100
160
1000
Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Recovery Charge vs. dIF/dt
100
90
80
VR = 200 V
IF = 50 A
TJ = 150 °C
Irr (A)
70
60
50
40
TJ = 25 °C
30
20
10
0
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Recovery Current vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 10-Sep-2019
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 10-Sep-2019
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB250FA60
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
250
F
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (250 = 250 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 10-Sep-2019
Document Number: 93626
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
Legal Disclaimer Notice
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