VS-UFB280FA20
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Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 280 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
SOT-227
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
VR
200 V
IF(AV) per module at TC = 100 °C
280 A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
trr
45 ns
Type
Modules - diode FRED Pt®
Package
SOT-227
DESCRIPTION / APPLICATIONS
The VS-UFB280FA20 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
200
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 95 °C
175
Single pulse forward current per diode
IFSM
TC = 25 °C
1700
PD
TC = 95 °C
372
W
Any terminal to case, t = 1 min
2500
V
-55 to +175
°C
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
A
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
UNITS
200
-
-
IF = 120 A
-
1.0
1.1
IF = 120 A, TJ = 175 °C
-
0.8
0.95
VR = VR rated
-
2
50
μA
TJ = 175 °C, VR = VR rated
-
0.65
2
mA
VR = 200 V
-
200
-
pF
UNITS
V
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
45
TJ = 25 °C
-
34
-
TJ = 125 °C
-
58
-
TJ = 25 °C
TJ = 125 °C
IF = 150 A
dIF/dt = 200 A/μs
VR = 160 V
-
5.1
-
-
10.3
-
TJ = 25 °C
-
87
-
TJ = 125 °C
-
300
-
MIN.
TYP.
MAX.
-
-
0.43
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
-
0.215
Flat, greased surface
-
0.05
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 10-Sep-2019
Document Number: 93463
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB280FA20
Vishay Semiconductors
1000
1000
TJ = 175 °C
100
TJ = 175 °C
TJ = 25 °C
10
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
10
1
TJ = 25 °C
0.1
0.01
1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
100
50
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
PDM
0.1
t1
DC
t2
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
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VS-UFB280FA20
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70
150
125
50
100
DC
75
40
30
50
Square wave (D = 0.50)
Rated VR applied
25
IF = 150 A
IF = 75 A
20
See note (1)
10
100
0
0
40
80
120 160 200 240 280 320 360
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
900
350
700
VR = 160 V
TJ = 125 °C
TJ = 25 °C
600
IF = 150 A
IF = 75 A
800
300
250
200
RMS limit
150
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
DC
50
50
100
150
200
500
400
300
200
100
0
0
Qrr (nC)
Forward Power Loss (W)
VR = 160 V
TJ = 125 °C
TJ = 25 °C
60
trr (ns)
Allowable Case Temperature (°C)
175
250
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 10-Sep-2019
Document Number: 93463
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB280FA20
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Sep-2019
Document Number: 93463
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB280FA20
www.vishay.com
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ORDERING INFORMATION TABLE
Device code
VS-
UF
B
280
F
A
20
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (280 = 280 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (20 = 200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 10-Sep-2019
Document Number: 93463
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
Legal Disclaimer Notice
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Document Number: 91000
