VS-UFB310CB40
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Vishay Semiconductors
Not Insulated SOT-227 Power Module
Ultrafast Rectifier, 310 A
FEATURES
• Not insulated package
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Optimized for power conversion: welding and
industrial SMPS applications
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
SOT-227
• Direct mounting to heatsink
• Designed and qualified for industrial level
Anode
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
2
3
4
DESCRIPTION / APPLICATIONS
The VS-UFB310CB40 not insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control,
provide a ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
Base common cathode
PRIMARY CHARACTERISTICS
VR
IF(AV) at TC = 119 °C per module
400 V
(1)
310 A
trr
39 ns
at TC
135 °C
Type
Modules - diode, FRED Pt®
Package
SOT-227
Note
(1) All 4 anode terminals connected
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
MAX.
UNITS
400
V
Continuous forward current per diode
IF
TC = 135 °C
155
Single pulse forward current per diode
IFSM (1)
TC = 25 °C
1300
PD
TC = 135 °C
Maximum power dissipation per module
Operating junction and storage temperatures
TJ, TStg
A
421
W
-55 to +175
°C
Note
(1) 10 ms sine or 6 ms rectangular pulse
Revision: 18-Nov-2020
Document Number: 93608
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage, per leg
SYMBOL
VBR
VFM
TEST CONDITIONS
MIN.
TYP.
MAX.
400
-
-
IF = 100 A
-
1.11
1.34
IF = 100 A, TJ = 125 °C
-
0.99
1.1
IF = 100 A, TJ = 175 °C
-
0.97
-
IF = 200 A
-
1.3
1.6
1.4
IR = 100 μA
IF = 200 A, TJ = 125 °C
-
1.22
IF = 200 A, TJ = 175 °C
-
1.25
-
VR = VR rated
-
1.3
50
-
100
-
UNITS
V
μA
Reverse leakage current, per leg
IRM
VR = VR rated, TJ = 125 °C
VR = VR rated, TJ = 175 °C
-
1
4
mA
Junction capacitance, per leg
CT
VR = 400 V
-
100
-
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time, per leg
Peak recovery current, per leg
Reverse recovery charge, per leg
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 400 A/μs, VR = 30 V
-
39
-
TJ = 25 °C
-
89
-
TJ = 125 °C
-
184
-
-
9
-
-
20
-
TJ = 25 °C
TJ = 125 °C
IF = 50 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
400
-
TJ = 125 °C
-
1840
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
-
-
0.19
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
RthCS
-
-
0.095
Flat, greased surface
-
0.07
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
Weight
Mounting torque
Case style
°C/W
SOT-227 not insulated
Revision: 18-Nov-2020
Document Number: 93608
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB310CB40
Vishay Semiconductors
10 000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
1
0
0.5
1.0
1.5
2.0
TJ = 175 °C
1000
2.5
0
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics,
Per Leg
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage,
Per Leg
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage,
Per Leg
1
0.1
Single pulse
(thermal resistance)
0.01
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, Per Leg
Revision: 18-Nov-2020
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VS-UFB310CB40
Vishay Semiconductors
180
250
160
230
140
210
DC
100
TJ = 125 °C
Square Wave (d = 0.5)
80 % Rated VR applied
80
170
150
130
60
110
40
TJ = 25 °C
90
20
70
See note (1)
0
0
40
50
100
80 120 160 200 240 280 320 360 400
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current, Per Leg
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt,
Per Leg
400
4000
350
3500
300
3000
250
Limite RMS
200
D=0.20
D=0.25
D=0.33
D=0.50
D=0.75
150
100
Qrr (nC)
Average Power Loss (W)
VR = 200 V
IF = 50 A
190
120
trr (ns)
Allowable Case Temperature (°C)
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VR = 200 V
IF = 50 A
TJ = 125 °C
2500
2000
1500
TJ = 25 °C
1000
DC
50
500
0
0
40
80
120
160
200
0
100
240
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics,
Per Leg
Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt,
Per Leg
50
VR = 200 V
IF = 50 A
40
Irr (A)
TJ = 125 °C
30
20
TJ = 25 °C
10
0
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt,
Per Leg
Revision: 18-Nov-2020
Document Number: 93608
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 18-Nov-2020
Document Number: 93608
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB310CB40
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
310
C
B
40
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (310 = 310 A)
5
-
Circuit configuration (two diodes common cathode )
6
-
Package indicator (SOT-227 standard not insulated)
7
-
Voltage rating (40 = 400 V)
Quantity per tube is 10 pcs, M4 screw and washer included
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
4
Two diodes common
cathode
3
4
3
1
2
Base
C
1
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging Information
www.vishay.com/doc?95425
Revision: 18-Nov-2020
Document Number: 93608
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
Legal Disclaimer Notice
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