VS-UFH280FA30

VS-UFH280FA30 www.vishay.com Vishay Semiconductors Insulated Hyperfast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Hyperfast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel SOT-227 • Industry standard outline • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VR 300 V IF(AV) per module at TC = 81 °C 280 A DESCRIPTION / APPLICATIONS trr 58 ns Type Modules - diode FRED Pt® Package SOT-227 Circuit configuration Two separate diodes, parallel pin-out The VS-UFH280FA30 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 300 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 95 °C 160 Single pulse forward current per diode IFSM TC = 25 °C 1539 PD TC = 95 °C 410 Any terminal to case, t = 1 min 2500 V -55 to +175 °C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg A W ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Forward voltage VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 300 - - IF = 100 A - 1.07 1.27 IF = 100 A, TJ = 175 °C - 0.82 - VR = VR rated - 0.5 100 μA TJ = 175 °C, VR = VR rated - 0.74 - mA VR = 300 V - 216 - pF IR = 200 μA UNITS V Revision: 18-Sep-2018 Document Number: 96136 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH280FA30 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 58 - TJ = 125 °C - 85 - - 4.5 - - 10 - IF = 50 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C TJ = 125 °C Qrr UNITS ns A TJ = 25 °C - 130 - TJ = 125 °C - 429 - MIN. TYP. MAX. - - 0.39 - - 0.195 - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction-to-case, single leg conducting TEST CONDITIONS RthJC Junction-to-case, both leg conducting Case-to-heatsink RthCS Flat, greased surface Weight Mounting torque °C/W SOT-227 1000 10 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Case style UNITS TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 TJ = 175 °C 1 0.1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100 150 200 250 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Diode) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode) 300 CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Diode) Revision: 18-Sep-2018 Document Number: 96136 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH280FA30 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.33 0.25 0.10 0.05 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) 700 180 160 500 140 120 DC 100 80 Square wave (D = 0.50) rated VR applied 60 40 400 TJ = 125 °C 300 TJ = 25 °C 200 100 20 0 0 0 30 60 90 100 120 150 180 210 240 270 200 300 400 500 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Current Rating Capability (Per Diode) Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt (Per Diode) 300 110 VR = 200 V IF = 50 A 100 250 90 200 80 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 100 50 0 trr (ns) Average Power Loss (W) VR = 200 V IF = 50 A 600 Qrr (nC) Allowable Case Temperature (°C) 200 70 TJ = 125 °C 60 50 TJ = 25 °C 40 30 0 25 50 75 100 125 150 175 200 225 100 200 300 400 500 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics (Per Diode) Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt (Per Diode) Revision: 18-Sep-2018 Document Number: 96136 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH280FA30 www.vishay.com Vishay Semiconductors 20 VR = 200 V IF = 50 A 18 16 TJ = 125 °C 14 Irr (A) 12 10 TJ = 25 °C 8 6 4 2 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt (Per Diode) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 18-Sep-2018 Document Number: 96136 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH280FA30 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF H 280 F A 30 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultra fast rectifier 3 - Hyper fast FRED Pt® diffused 4 - Current rating (280 = 280 A) 5 - Circuit configuration (two separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (30 = 300 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment Two separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 18-Sep-2018 Document Number: 96136 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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