VS-UFH60BA65

VS-UFH60BA65 www.vishay.com Vishay Semiconductors Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A FEATURES • Hyperfast and soft recovery characteristic • Electrically isolated base plate • Simplified mechanical designs, rapid assembly • High operation junction temperature (TJ max. = 175 °C) • Designed and qualified for industrial and consumer level • UL approved file E78996 SOT-227 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION VRRM 650 V IO at TC = 123 °C 60 A trr 63 ns Type Modules - Bridge, Hyperfast Package SOT-227 Circuit configuration Single phase bridge The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.   ABSOLUTE MAXIMUM RATINGS SYMBOL CHARACTERISTICS IO IFSM I2t VALUES UNITS 60 A TC 123 °C 50 Hz 360 60 Hz 377 50 Hz 648 60 Hz 589 A2s 650 V -55 to +175 °C VRRM TJ A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER UFH60BA65 VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA 65 650 700 2 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 650 - - IF = 60 A - 1.7 2.35 VR = 650 V - 1.0 100 VR = 650 V, TJ = 150 °C - 250 - 2500 - - Cathode to anode breakdown voltage VBR IR = 250 μA Forward voltage, per diode VFM Reverse leakage current, per leg IRM RMS isolation voltage base plate VISOL f = 50 Hz, any terminal to case, t = 1 min UNITS V μA V Revision: 25-Apr-2018 Document Number: 96135 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH60BA65 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Low level of threshold voltage, per leg VF(T0)1 Low level value of forward slope resistance rf1 High level of threshold voltage, per leg VF(T0)2 High level value of forward slope resistance rf2 Maximum forward voltage, per diode VFM VALUES Resistive or inductive load A 123 °C No voltage reapplied 360 t = 10 ms 100 % VRRM 303 t = 8.3 ms reapplied t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100 % VRRM 458 t = 8.3 ms reapplied 417 t = 8.3 ms UNITS 60 377 Initial TJ = 25 °C A 317 648 589 I2t for time tx = I2t x tx0.1  tx  10 ms, VRRM = 0 V A2s kA2s 6.4 (16.7 % x  x IF(AV)) < I < x IF(AV), TJ = TJ maximum 16.49 V 0.88 m (I >  x IF(AV)), TJ = TJ maximum 15.87 V 1.16 m IF = 60 A 2.35 V RECOVERY CHARACTERISTICS PARAMETER Typical reverse recovery time, per diode Typical reverse recovery current, per diode Typical reverse recovery charge, per diode Typical junction capacitance SYMBOL trr Irr Qrr CT TEST CONDITIONS VALUES UNITS TJ = 25 °C, IF = 50 A, VR = 200 V, dIF/dt = 200 A/μs 63 TJ = 125 °C, IF = 50 A, VR = 200 V,  dIF/dt = 200 A/μs 134 TJ = 25 °C, IF = 50 A, VR = 200 V,  dIF/dt = 200 A/μs 4.1 TJ = 125 °C, IF = 50 A, VR = 200 V,  dIF/dt = 200 A/μs 11.4 TJ = 25 °C, IF = 50 A, VR = 200 V,  dIF/dt = 200 A/μs 130 TJ = 125 °C, IF = 50 A, VR = 200 V,  dIF/dt = 200 A/μs 765 VR = 650 V 77 pF ns IFM A trr t dIR dt Qrr IRM(REC) nC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance junction to case RthJC - - 0.91 Thermal resistance case to heatsink RthCS - 0.1 - - 30 - Junction and storage temperature range SYMBOL TEST CONDITIONS Flat, greased surface Weight Mounting torque Case style °C/W g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) SOT-227 Revision: 25-Apr-2018 Document Number: 96135 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH60BA65 www.vishay.com Vishay Semiconductors 300 250 200 IF (A) TJ = 175 °C 150 TJ = 25 °C TJ = 150 °C 100 TJ = 125 °C 50 Average Power Loss (W) 250 0 180° Sine 150 100 0.5 1.0 1.5 2.0 2.5 50 0 3.0 10 20 30 40 50 60 Average Forward Current (A) Fig. 1 - Typical Forward Voltage Characteristics Fig. 4 - Forward Power Loss Characteristics TJ = 175 °C 0.1 TJ = 150 °C TJ = 125 °C 0.01 0.001 0.0001 TJ = 25 °C 0.00001 50 150 250 350 450 550 650 VR - Reverse Voltage (V) Maximum Allowable Case Temperature (°C) Instantaneous Forward Voltage (V) 1 180 160 180 °C Rect 140 180 °C Sine 120 100 80 60 40 20 0 0 25 50 75 100 125 IF(AV) - Average Forward Current (A) Fig. 5 - Current Rating Characteristics (A) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode) 1000 25 VR = 200 V IF = 50 A 20 TJ = 125 °C 15 Irr (A) CT - Junction Capacitance (pF) 180° Rect 0 0 IR - Reverse Current (mA) 200 100 TJ = 25 °C 10 5 TJ = 25 °C 10 0 10 100 1000 100 200 300 400 500 VR - Reverse Voltage (V) dIF/dt (A/μs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Diode) Fig. 6 - Typical Reverse Recovery Current vs. dIF/dt Revision: 25-Apr-2018 Document Number: 96135 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH60BA65 Vishay Semiconductors 1200 160 150 140 130 120 110 100 90 80 70 60 50 40 30 VR = 200 V IF = 50 A VR = 200 V IF = 50 A 1100 1000 900 800 TJ = 125 °C Qrr (nC) trr (ns) www.vishay.com 700 TJ = 125 °C 600 500 400 TJ = 25 °C TJ = 25 °C 300 200 100 0 100 200 300 400 500 100 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Reverse Recovery Charge vs. dIF/dt ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.33 0.25 0.10 0.05 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt (Per Diode) Revision: 25-Apr-2018 Document Number: 96135 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFH60BA65 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF H 60 B A 65 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultra fast rectifier 3 - Hyper fast FRED Pt® diffused 4 - Current rating (60 = 60 A) 5 - Circuit configuration: B = Single phase bridge 6 - Package indicator: A = SOT-227, standard insulated base 7 - Voltage rating (65 = 650 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 3 (-) (AC) 4 Single phase bridge 4 3 1 2 B (+) 1 2 (AC) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 25-Apr-2018 Document Number: 96135 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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