VS-UFL230FA60
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Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 230 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VR
600 V
IF(AV) per module at TC = 102 °C
230 A
trr
44 ns
Type
Modules - diode FRED Pt®
Package
SOT-227
DESCRIPTION / APPLICATIONS
The VS-UFL230FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
MAX.
UNITS
600
V
Continuous forward current per diode
IF
TC = 85 °C
160
Single pulse forward current per diode
IFSM
TC = 25 °C
1500
PD
TC = 85 °C
416
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
Any terminal to case, t = 1 min
A
W
2500
V
-55 to +175
°C
Revision: 10-Sep-2019
Document Number: 93635
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VS-UFL230FA60
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 100 A
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
MIN.
TYP.
MAX.
600
-
-
-
1.28
1.44
IF = 100 A, TJ = 125 °C
-
1.13
1.24
IF = 200 A
-
1.48
1.66
UNITS
V
IF = 200 A, TJ = 125 °C
-
1.37
1.55
VR = VR rated
-
0.1
50
μA
TJ = 175 °C, VR = VR rated
-
0.25
2
mA
VR = 600 V
-
72
-
pF
MAX.
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
44
-
TJ = 25 °C
-
104
-
-
210
-
-
10
-
-
22
-
TJ = 25 °C
-
520
-
TJ = 125 °C
-
2200
-
MIN.
TYP.
MAX.
-
-
0.43
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 50 A
dIF/dt = 200 A/μs
VR = 200 V
TYP.
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
-
0.215
Flat, greased surface
-
0.05
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
Weight
Mounting torque
Case style
UNITS
°C/W
SOT-227
Revision: 10-Sep-2019
Document Number: 93635
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL230FA60
Vishay Semiconductors
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
100
TJ = 125 °C
10
TJ = 25 °C
0.5
1
1.5
2
2.5
VFM - Forward Voltage Drop (V)
93635_01
10
TJ = 125 °C
1
0.1
0.01
0.001
0
1
0
100
93635_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
TJ = 25 °C
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
100
10
10
93635_03
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
1
0.1
DC
0.01
0.0001
93635_04
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Sep-2019
Document Number: 93635
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL230FA60
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Vishay Semiconductors
250
230
150
TJ = 125 °C
210
125
190
100
trr (ns)
Allowable Case Temperature (°C)
175
DC
75
170
150
130
110
50
Square wave (D = 0.50)
80 % Rated VR applied
25
90
TJ = 25 °C
70
0
50
0
40
80
120
160
200
240
100
280
IF(AV) - Average Forward Current (A)
93635_05
1000
dIF/dt (A/µs)
93635_07
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
500
5000
400
4000
3500
300
Qrr (nC)
Average Power Loss (W)
4500
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
200
100
DC
TJ = 125 °C
3000
2500
2000
1500
1000
500
0
0
93635_06
TJ = 25 °C
0
40
80
120
160
200
240
100
280
Average Forward Current - IF(AV) (A)
1000
dIF/dt (A/µs)
93635_08
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 6 - Forward Power Loss Characteristics
50
40
30
Irr (A)
TJ = 125 °C
20
10
TJ = 25 °C
0
100
1000
dIF/dt (A/μs)
93635_9
Fig. 9 - Typical Irr Diode vs. dIF/dt
Note
(1) Formula used: T = T - (Pd +Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 10-Sep-2019
Document Number: 93635
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL230FA60
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 10-Sep-2019
Document Number: 93635
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL230FA60
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
L
230
F
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused, low VF
4
-
Current rating (230 = 230 A)
5
-
Circuit configuration (two separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 10-Sep-2019
Document Number: 93635
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
Legal Disclaimer Notice
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Document Number: 91000
