VS-UFL330FA60
www.vishay.com
Vishay Semiconductors
Insulated Ultra Fast Rectifier Module, 330 A
FEATURES
• Gen 4 FRED Pt® dices technology
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
VR
600 V
IF(AV) per module at TC = 107 °C
330 A
trr
98 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
Circuit configuration
Two separate diodes,
parallel pin-out
The VS-UFL330FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package.
Gen 4 FRED technology, state of the art, ultra low VF, soft
switching optimized for IGBT F/W diode.
The minimized conduction loss, optimized storage charge,
and low recovery current minimized the switching losses
and reduce the over dissipation in the switching element
and snubbers.
ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode voltage
SYMBOL
Continuous forward current per diode
IF
Single pulse forward current per diode
IFSM
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
TEST CONDITIONS
VR
PD
VISOL
TJ, TStg
MAX.
UNITS
600
V
TC = 90 °C
243
TC = 25 °C, 10 ms sine or 6 ms rectangular pulse
1130
TC = 90 °C
773
Any terminal to case, t = 1 minute
A
W
2500
V
-55 to +175
°C
Revision: 13-Apr-18
Document Number: 96016
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
VBR
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 500 μA
MIN.
TYP.
MAX.
600
-
-
IF = 200 A
-
1.43
1.65
IF = 200 A, TJ = 125 °C
-
1.29
-
IF = 200 A, TJ = 175 °C
-
1.22
-
VR = 600 V
-
0.3
150
TJ = 125 °C, VR = 600 V
-
222
-
UNITS
V
μA
TJ = 175 °C, VR = 600 V
-
4.2
-
mA
VR = 600 V, f = 1 MHz
-
160
-
pF
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
98
-
TJ = 125 °C
-
163
-
-
17
-
-
34
-
TJ = 25 °C
TJ = 125 °C
IF = 50 A
dIF/dt = 500 A/μs
VR = 200 V
TJ = 25 °C
-
825
-
TJ = 125 °C
-
2788
-
MIN.
TYP.
MAX.
-
-
0.22
-
-
0.11
-
0.1
-
-
30
-
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
Flat, greased surface
Weight
Mounting torque
Case style
UNITS
°C/W
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.8 (15.9)
Nm (lbf.in)
SOT-227
Revision: 13-Apr-18
Document Number: 96016
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL330FA60
Vishay Semiconductors
1000
10
TJ = 175 °C
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
100
TJ = 125 °C
10
TJ = 25 °C
1
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current (Per Diode)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode)
CT - Junction Capacitance (pF)
10 000
1000
100
TJ = 25 °C
f = 1 MHz
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs Reverse Voltage (Per Diode)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.75
0.50
0.33
0.25
0.10
0.05
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Junction-to-Case Characteristics (Per Diode)
Revision: 13-Apr-18
Document Number: 96016
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VS-UFL330FA60
Vishay Semiconductors
180
3300
160
3000
VR = 200 V
IF = 50 A
2700
140
TJ = 125 °C
2400
120
2100
Qrr (nC)
Allowable Case Temperature (°C)
www.vishay.com
DC
100
80
Square wave (D = 0.50)
rated VR applied
60
40
1800
1500
1200
TJ = 25 °C
900
600
20
300
0
0
0
50
100
150
200
250
300
350
100
400
200
400
500
dIF/dt (A/μs)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Current Rating Capability (Per Diode)
Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt (Per Diode)
400
270
350
250
VR = 200 V
IF = 50 A
230
300
TJ = 125 °C
210
250
trr (ns)
Average Power Loss (W)
300
200
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
150
100
50
190
170
150
130
TJ = 25 °C
110
90
0
70
0
25
50
75 100 125 150 175 200 225 250
100
200
300
400
500
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics (Per Diode)
Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt (Per Diode)
40
VR = 200 V
IF = 50 A
36
32
TJ = 125 °C
28
Irr (A)
24
20
TJ = 25 °C
16
12
8
4
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt (Per Diode)
Revision: 13-Apr-18
Document Number: 96016
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL330FA60
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
L
330
F
A
60
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused, low VF
4
-
Current rating (300 = 300 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (60 = 600 V)
Quantity per tube is 10 pcs, M4 screw and washer included
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
Two separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 13-Apr-18
Document Number: 96016
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFL330FA60
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 13-Apr-18
Document Number: 96016
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
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Document Number: 91000