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VS-UFL330FA60

VS-UFL330FA60

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT-227

  • 描述:

    快/超快恢复二极管 VBR:600V Ct:160pF Trr:98ns If:243A Pd:773W

  • 数据手册
  • 价格&库存
VS-UFL330FA60 数据手册
VS-UFL330FA60 www.vishay.com Vishay Semiconductors Insulated Ultra Fast Rectifier Module, 330 A FEATURES • Gen 4 FRED Pt® dices technology • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline SOT-227 • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS VR 600 V IF(AV) per module at TC = 107 °C 330 A trr 98 ns Type Modules - Diode FRED Pt® Package SOT-227 Circuit configuration Two separate diodes, parallel pin-out The VS-UFL330FA60 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package.  Gen 4 FRED technology, state of the art, ultra low VF, soft switching optimized for IGBT F/W diode. The minimized conduction loss, optimized storage charge, and low recovery current minimized the switching losses and reduce the over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode voltage SYMBOL Continuous forward current per diode IF Single pulse forward current per diode IFSM Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures TEST CONDITIONS VR PD VISOL TJ, TStg MAX. UNITS 600 V TC = 90 °C 243 TC = 25 °C, 10 ms sine or 6 ms rectangular pulse 1130 TC = 90 °C 773 Any terminal to case, t = 1 minute A W 2500 V -55 to +175 °C Revision: 13-Apr-18 Document Number: 96016 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL330FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 500 μA MIN. TYP. MAX. 600 - - IF = 200 A - 1.43 1.65 IF = 200 A, TJ = 125 °C - 1.29 - IF = 200 A, TJ = 175 °C - 1.22 - VR = 600 V - 0.3 150 TJ = 125 °C, VR = 600 V - 222 - UNITS V μA TJ = 175 °C, VR = 600 V - 4.2 - mA VR = 600 V, f = 1 MHz - 160 - pF UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 98 - TJ = 125 °C - 163 - - 17 - - 34 - TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 500 A/μs VR = 200 V TJ = 25 °C - 825 - TJ = 125 °C - 2788 - MIN. TYP. MAX. - - 0.22 - - 0.11 - 0.1 - - 30 - ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased surface Weight Mounting torque Case style UNITS °C/W g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) SOT-227 Revision: 13-Apr-18 Document Number: 96016 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL330FA60 Vishay Semiconductors 1000 10 TJ = 175 °C TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Diode) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode) CT - Junction Capacitance (pF) 10 000 1000 100 TJ = 25 °C f = 1 MHz 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs Reverse Voltage (Per Diode) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.33 0.25 0.10 0.05 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Junction-to-Case Characteristics (Per Diode) Revision: 13-Apr-18 Document Number: 96016 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL330FA60 Vishay Semiconductors 180 3300 160 3000 VR = 200 V IF = 50 A 2700 140 TJ = 125 °C 2400 120 2100 Qrr (nC) Allowable Case Temperature (°C) www.vishay.com DC 100 80 Square wave (D = 0.50) rated VR applied 60 40 1800 1500 1200 TJ = 25 °C 900 600 20 300 0 0 0 50 100 150 200 250 300 350 100 400 200 400 500 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Current Rating Capability (Per Diode) Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt (Per Diode) 400 270 350 250 VR = 200 V IF = 50 A 230 300 TJ = 125 °C 210 250 trr (ns) Average Power Loss (W) 300 200 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 150 100 50 190 170 150 130 TJ = 25 °C 110 90 0 70 0 25 50 75 100 125 150 175 200 225 250 100 200 300 400 500 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics (Per Diode) Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt (Per Diode) 40 VR = 200 V IF = 50 A 36 32 TJ = 125 °C 28 Irr (A) 24 20 TJ = 25 °C 16 12 8 4 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt (Per Diode) Revision: 13-Apr-18 Document Number: 96016 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL330FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF L 330 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused, low VF 4 - Current rating (300 = 300 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) Quantity per tube is 10 pcs, M4 screw and washer included CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment Two separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 13-Apr-18 Document Number: 96016 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL330FA60 www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 13-Apr-18 Document Number: 96016 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
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