VS-VS5HD480CW60

VS-VS5HD480CW60 www.vishay.com Vishay Semiconductors FRED Pt® Gen 5, Ultrafast Rectifier Diode, 600 V, 480 A FEATURES Lug terminal anode 1 • Ultrafast and optimized Qrr Lug terminal anode 2 • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operation junction temperature • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base common cathode TO-244 BENEFITS • Reduced RFI and EMI • Higher frequency operation PRIMARY CHARACTERISTICS • Reduced snubbing IF(AV) at 92 °C (per module) 480 A VR 600 V Qrr (typical) 525 nC • Reduced parts count DESCRIPTION / APPLICATIONS trr 61 ns Type Modules - diode, FRED Pt® Package TO-244 Circuit configuration Two diodes common cathode Featuring a unique combination of low conduction and switching losses the FRED Pt® Gen 5 is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. These devices are also ideally suited for HF welding, power converters, and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Non-repetitive single pulse forward current per diode SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR IF(DC) IFSM TC = 25 °C 448 TC = 85 °C 313 TC = 113 °C 240 TC = 25 °C 2200 TC = 25 °C 789 TC = 113 °C 326 A Maximum power dissipation per diode PD Storage temperature range TStg -40 to +150 °C Operating junction temperature range TJ -40 to +175 °C W ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage Forward voltage SYMBOL VBR VFM TEST CONDITIONS IR = 400 μA MIN. TYP. MAX. 600 - - IF = 240 A - 1.5 1.7 IF = 480 A - 1.69 2.1 IF = 240 A, TJ = 150 °C - 1.21 - IF = 480 A, TJ = 150 °C - 1.46 - UNITS V Reverse leakage current IRM TJ = 150 °C, VR = 600 V - 0.3 1.0 mA Series inductance LS From top of terminal hole to mounting plane - 5 - nH Maximum junction capacitance per leg CT VDC = 5 V, f = 1 MHz, 25 °C - - 1.2 nF Revision: 08-Feb-2022 Document Number: 96924 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VS5HD480CW60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 61 - TJ = 125 °C - 157 - - 6.25 - - 20.35 - IF = 50 A, dIF/dt = 200 A/μs, VR = 300 V TJ = 25 °C TJ = 125 °C TJ = 25 °C - 525 - TJ = 125 °C - 2860 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case per leg per module Thermal resistance, case to heatsink RthJC RthCS MIN. TYP. MAX. - - 0.19 - - 0.095 - 0.10 - UNITS °C/W - 68 - g - 2.4 - oz. Mounting torque 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque Weight 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 1000 10 TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 lbf · in TO-244 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Case style lbf · in (N · m) TJ = 175 °C 1 0.1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Diode) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Diode) Revision: 08-Feb-2022 Document Number: 96924 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VS5HD480CW60 www.vishay.com 3200 Vishay Semiconductors 180 2800 Allowable Case Temperature (°C) VR = 300 V IF = 50 A Qrr (nC) 2400 2000 TJ = 125 °C 1600 1200 TJ = 25 °C 800 400 0 50 100 150 200 160 140 120 100 DC 80 AC 60 40 20 0 0 100 200 300 400 500 600 dIF/dt (A/µs) IC - Continuous Collector Current (A) Fig. 3 - Typical Reverse Recovery Charge vs dIF/dt (Per Diode) Fig. 6 - Maximum Continuous Forward Current vs. Case Temperature 200 175 TJ = 125 °C 150 trr (ns) Average Power Loss (W) VR = 300 V IF = 50 A 125 100 75 50 TJ = 25 °C 50 100 150 200 RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0 40 80 120 160 200 240 280 320 360 dIF/dt (A/µs) IF(AV) - Average Forward Current (A) Fig. 4 - Typical Reverse Recovery Time vs dIF/dt (Per Diode) Fig. 7 - Average Power Loss vs. Average Forward Current (Forward Power Loss Characteristics) 10 000 25 CT - Junction Capacitance (pF) VR = 200 V IF = 50 A 20 TJ = 125 °C 15 Irr (A) 560 520 480 440 400 360 320 280 240 200 160 120 80 40 0 TJ = 25 °C 10 5 0 50 100 150 200 1000 100 0.1 1 10 100 1000 dIF/dt (A/µs) VR - Reverse Voltage (V) Fig. 5 - Typical Reverse Recovery Current vs dIF/dt (Per Diode) Fig. 8 - Typical Junction Capacitance vs. Reverse Voltage Revision: 08-Feb-2022 Document Number: 96924 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VS5HD480CW60 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - ZthJC Maximum Thermal Impedance Junction to Case vs. t1 Rectangular Pulse Duration ORDERING INFORMATION TABLE Device code VS-VS 5HD 1 2 480 C W 60 3 4 5 6 1 - Vishay Semiconductors product 2 - 5HD = high speed FRED Pt® Gen 5 3 - Current rating (480 = 480 A) 4 - Circuit configuration: C = two diodes common cathode 5 - W = TO-244 wire bondable not isolated 6 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lug terminal anode 1 Two diodes common cathode Lug terminal anode 2 C Base common cathode LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 08-Feb-2022 Document Number: 96924 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VS5HD480CW60 www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 08-Feb-2022 Document Number: 96924 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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