VS-VSKC270-30PBF

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (MAGN-A-PAK Power Modules), 250 A to 320 A FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MAGN-A-PAK DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 250 A to 320 A Type Modules - diode, high voltage Package MAGN-A-PAK Circuit configuration Two diodes doubler circuit, two diodes common cathode, single diode This VS-VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.) MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS I2t I2t VRRM TJ VSK.270.. VSK.320.. UNITS 250 270 320 A TC 100 100 100 °C 393 424 502 50 Hz 7015 8920 10 110 60 Hz 7345 9430 10 580 IF(RMS) IFSM VSK.250.. A 50 Hz 246 398 511 60 Hz 225 363 466 2460 3980 5110 kA2s 400 to 2000 400 to 3000 400 to 2000 V -40 to +150 kA2s °C Revision: 03-Apr-2019 Document Number: 93581 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 VS-VSK.270 VS-VSK.320 VS-VSK.250 VS-VSK.270 VS-VSK.320 VS-VSK.270 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 30 3000 3100 IRRM MAXIMUM AT 150 °C mA 50 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 320 A 100 100 100 °C As AC switch 393 424 502 t = 10 ms 7015 8920 10 110 7345 9340 10 580 5900 7500 8500 6180 7850 8900 246 398 511 225 363 466 174 281 361 159 257 330 t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 t = 10 ms t = 10 ms t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial  TJ = TJ maximum 100 % VRRM reapplied VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)),  TJ = TJ maximum 0.79 0.74 0.69 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.92 0.87 0.86 Low level forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)),  TJ = TJ maximum 0.63 0.94 0.59 High level forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.49 0.81 0.44 IFM =  x IF(AV), TJ = TJ maximum, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.29 1.48 1.28 VFM A kA2s Low level value of threshold voltage Maximum forward voltage drop UNITS 270 t = 8.3 ms Maximum I2t for fusing VSK.250 VSK.270 VSK.320 250 180° conduction, half sine wave t = 8.3 ms IFSM VALUES kA2s V m V BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse leakage current IRRM TJ = 150 °C RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, t = 1 s VALUES UNITS 50 mA 3000 V Revision: 03-Apr-2019 Document Number: 93581 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range VALUES TEST CONDITIONS VSK.250 TJ, TStg VSK.270 VSK.320 -40 to +150 UNITS °C Maximum thermal resistance,  junction to case per junction RthJC DC operation Maximum resistance, case to heat sink  per module RthCS Mounting surface flat, smooth and greased 0.035 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 Nm 800 g 30 oz. Mounting torque ± 10 % MAGN-A-PAK to heatsink Busbar to MAGN-A-PAK 0.16 0.125 0.125 K/W Approximate weight Case style MAGN-A-PAK R CONDUCTION PER JUNCTION RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICE 180° 120° 90° 60° 30° 180° 120° 90° 60° UNITS 30° VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033 VSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 03-Apr-2019 Document Number: 93581 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 150 VSK.250.. Series R thJC (DC) = 0.16 K/ W 140 130 Conduction Angle 120 110 100 30° 60° 90 90° 120° 180° 80 0 50 100 150 200 250 300 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 300 180° 120° 90° 60° 30° 250 200 RMSLimit 150 100 Conduc tion Angle 50 VSK.250.. Series T J = 150°C 0 0 130 Conduction Period 110 30° 60° 100 90° 120° 90 180° DC 80 0 50 150 200 250 450 Maximum Average Forward Power Loss (W) VSK.250.. Series R thJC (DC) = 0.16 K/ W 120 100 Fig. 3 - Forward Power Loss Characteristics 150 100 150 200 250 300 350 400 DC 180° 120° 90° 60° 30° 400 350 300 250 200 RMSLimit 150 Conduction Period 100 VSK.250.. Series TJ= 150°C 50 0 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 600 = 02 0. W K/ ta el -D 180° (Sine) 400 A 0. 08 K/ 0. W 12 K/ W 500 S R th 0.2 K/ W R Maximum Tota l Forward Power Loss (W) Maximum Allowable Case Temperature (°C) Fig. 1 - Current Ratings Characteristics 140 50 Average Forward Current (A) Average Forward Current (A) 300 DC 0.2 5 K/ W 0.4 K/ W 200 VSK.250.. Series Per Junc tion TJ = 150°C 100 0.6 K / W 0 0 50 100 150 200 250 300 350 400 0 Total RMSOutput Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Forward Power Loss Characteristics Revision: 03-Apr-2019 Document Number: 93581 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors A R t hS K/ W .01 =0 K/ W K/ W W K/ 800 0. 1 /W 3K 0.0 0. 08 180° (Sine) 180° (Rec t) 1000 05 0. 0.1 6K /W 600 e lt -D 0.2 5K /W aR Ma ximum Total Power Lo ss (W) 1200 400 2 x VSK.250.. Series Single Phase Brid ge Connec ted TJ = 150°C 200 0.35 K/ W 0 0 100 200 300 400 Total Output Current (A) 0 500 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 6 - Forward Power Loss Characteristics 1000 3 x VSK.250.. Series Three Phase Brid ge Connec ted TJ = 150°C 400 200 K/ W 0.1 6K /W aR 600 0.1 2 e lt -D 800 K/ W /W 5K .00 =0 120° (Rec t) SA 1200 K/ W R th 0. 08 W K/ 1400 W K/ 0. 06 2 0.0 1600 04 0. Maximum Total Power Loss (W) 1800 0.25 K/ W 0.35 K /W 0 0 100 200 300 400 500 600 700 800 0 Total Outp ut Current (A) 25 50 75 100 125 150 Maximum Allowab le Ambient Temp era ture (°C) 6500 At Any Ra ted Loa d Cond ition And With Rated VRRM Ap p lied Following Surge. Initia l T J = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6000 5500 5000 4500 4000 3500 3000 2500 VSK.250.. Series Per Junc tion 2000 1500 1 10 100 Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 8 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 7 - Forward Power Loss Characteristics 7000 6500 6000 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 150°C No Voltage Reapp lied Ra ted V RRM Rea pplied 5000 4500 4000 3500 3000 2500 2000 1500 0.01 VSK.250.. Series Per Junc tion 0.1 1 Pulse Train Duration (s) Fig. 9 - Maximum Non-Repetitive Surge Current Revision: 03-Apr-2019 Document Number: 93581 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com 10000 Instantaneous Forward Current (A) TJ= 25°C TJ= 150°C 1000 100 VSK.250.. Series Per Junc tion 10 0.5 1 1.5 2 2.5 3 3.5 4 Maximum Allowable Case Temperature (°C) Vishay Semiconductors 150 VSK.270.. Series R thJC (DC) = 0.125 K/ W 140 130 120 Conduction Period 110 30° 100 90 60° 90° 120° 180° DC 80 0 100 200 300 400 500 Fig. 10 - Forward Voltage Drop Characteristics Fig. 13 - Current Ratings Characteristics 1 Steady State Value: R thJC = 0.16 K/ W (DC Operation) 0.1 0.01 VSK.250.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Maximum Average Forward Power Loss (W) Average Forward Current (A) Transient Thermal Impedanc e Z thJC (K/ W) Instantaneous Forward Voltage (V) 400 350 180° 120° 90° 60° 30° 300 250 RMS Limit 200 150 Conduc tion Angle 100 VSK.270.. Series TJ= 150°C 50 0 0 50 100 150 200 250 300 Fig. 11 - Thermal Impedance ZthJC Characteristics Fig. 14 - Forward Power Loss Characteristics 150 VSK.270.. Series R thJC (DC) = 0.125 K/ W 140 130 Conduction Angle 120 110 30° 100 60° 90° 90 120° 180° 80 0 50 100 150 200 250 300 Maximum Average Forward Power Loss (W) Average Forward Current (A) Maximum Allowable Case Temperature (°C) Square Wave Pulse Duration (s) 500 DC 180° 400 120° 90° 350 60° 30° 300 450 RMS Limit 250 200 150 Conduction Period 100 VSK.270.. Series TJ= 150°C 50 0 0 50 100 150 200 250 300 350 400 450 Average Forward Current (A) Average Forward Current (A) Fig. 12 - Current Ratings Characteristics Fig. 15 - Forward Power Loss Characteristics Revision: 03-Apr-2019 Document Number: 93581 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors W K/ K/ W ta el -D 0.1 6K /W R 180° (Sine) 400 02 0. 500 K/ W = 0. 1 SA th 0. 06 600 R Maximum Total Forwa rd Power Loss (W) 700 0.2 5 K/ W 0.3 K/ W DC 300 0. 4 K/ W 200 0.6 K / VSK.270.. Series Per Junc tion TJ = 150°C 100 W 0 0 50 0 100 150 200 250 300 350 400 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Total RMSOutput Current (A) Fig. 16 - Forward Power Loss Characteristics A thS = W K/ 02 0. ta el -D 2 x VSK.270.. Series Single Phase Bridge Connec ted TJ = 150°C 0.25 K/ R 0.1 2K /W 0.1 6K /W 600 200 K/ W 0.0 8K /W 800 400 R 1000 W K/ 180° (Sine) 180° (Rec t) 1200 W K/ 0. 06 1400 3 0. 1600 04 0. Maximum Total Power Loss (W) 1800 W 0.4 K/ W 0.6 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 0 600 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 17 - Forward Power Loss Characteristics 0. 04 2100 K/ W 02 0. 1800 = A hS R t 0. 06 K/ W 0.1 900 R 120° (Rec t) 1200 K/ W 0.16 3 x VSK.270.. Series Three Phase Bridge Connec ted T J= 150°C 600 300 ta el -D 1500 W K/ Maximum Total Power Loss (W) 2400 K/ W 0.25 K/ W 0.4 K/ W 0.6 K/ W 0 0 200 400 600 Total Output Current (A) 800 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 18 - Forward Power Loss Characteristics Revision: 03-Apr-2019 Document Number: 93581 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 8000 At Any Ra ted Load Cond ition And With Ra ted VRRM Ap plied Following Surge. Initial T J = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6000 5000 4000 3000 VSK.270.. Series Per Junc tion 2000 1 10 Transient Thermal Impedance Z thJC (K/ W) Peak Half Sine Wave Forward Current (A) www.vishay.com 100 1 Steady State Value: R thJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.270.. Series Per Junction 0.001 0.001 9000 8000 7000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initia l TJ = 150°C No Voltage Reap plied Rated V RRM Rea p plied 6000 5000 4000 3000 VSK.270.. Series Per Junction 2000 0.01 0.1 1 TJ= 25°C TJ= 150°C 100 VSK.270.. Series Per Junc tion 1.5 2 2.5 3 100 VSK.320.. Series R thJC (DC) = 0.125 K/ W 140 130 Conduction Angle 120 110 30° 60° 100 90° 120° 90 180° 80 0 50 100 150 200 250 300 350 3.5 4 Instantaneous Forward Voltage (V) Fig. 21 - Forward Voltage Drop Characteristics Fig. 23 - Current Ratings Characteristics Maximum Allowa ble Case Temperature (°C) Instantaneous Forward Current (A) 10000 1 10 Average Forward Current (A) Fig. 20 - Maximum Non-Repetitive Surge Current 10 0.5 1 150 Pulse Train Dura tion (s) 1000 0.1 Fig. 22 - Thermal Impedance ZthJC Characteristics Maximum Allowable Case Temp erature (°C) Peak Half Sine Wave Forward Current (A) Fig. 19 - Maximum Non-Repetitive Surge Current 0.01 Square Wave Pulse Duration (s) Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) 150 VSK.320.. Series R thJC (DC) = 0.125 K/ W 140 130 120 Conduc tion Period 110 30° 60° 90° 100 120° 180° 90 DC 80 0 100 200 300 400 500 600 Average Forward Current (A) Fig. 24 - Current Ratings Characteristics Revision: 03-Apr-2019 Document Number: 93581 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series Vishay Semiconductors 400 180° 120° 90° 60° 30° 350 300 250 RMSLimit 200 150 Conduction Angle 100 VSK.320.. Series TJ = 150°C 50 0 0 50 100 150 200 250 300 500 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) www.vishay.com 350 DC 180° 120° 90° 60° 30° 450 400 350 300 250 RMS Limit 200 Conduc tion Period 150 VSK.320.. Series Per Junction TJ = 150°C 100 50 0 0 100 Average Forward Current (A) 200 300 400 500 600 Average Forward Current (A) Fig. 25 - Forward Power Loss Characteristics Fig. 26 - Forward Power Loss Characteristics K/ W W K/ 0.1 6K /W 0.2 K/ W ta el -D R DC 02 0. 400 = 180° (Sine) 500 K/ W SA th 0. 1 W K/ 0. 06 600 R 04 0. Maximum Total Forward Power Loss (W) 700 0.3 K/ W 0.4 K/ W 300 200 VSK.320.. Series Per Junc tion TJ = 150°C 100 0.6 K/ W 0 0 100 200 300 400 Total RMSOutput Current (A) 500 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 27 - Forward Power Loss Characteristics 50 75 K/ W a R 600 elt -D 0.1 6 W K/ .02 =0 800 0. 12 K/ W SA 1000 R th 180° (Sine) 180° (Rec t) /W 3K 0.0 W K/ 04 0. W K/ 0. 08 1200 06 0. Maximum Total Power Loss (W) 1400 K/ W 0.25 K/ W 400 2 x VSK.320.. Series Single Phase Bridge Connec ted T J = 150°C 200 0.5 K / W 0. 6 K/ W 0 0 100 200 300 400 500 Total Output Current (A) 600 0 25 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 28 - Forward Power Loss Characteristics Revision: 03-Apr-2019 Document Number: 93581 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors h Rt 3 x VSK.320.. Series Three Phase Bridge Connected TJ = 150°C 400 R 0.1 2 800 ta el -D 1200 W K/ 120° (Rec t) 1600 02 0. K/ W 0. 05 K/ W 0.0 6K /W 0.0 8K /W 2000 = 0. 04 W K/ 2400 SA 03 0. Maximum Total Power Loss (W) 2800 K/ W 0.2 K / W 0.3 K/ W 0.6 K/ W 0 0 200 400 600 800 Total Output Current (A) 1000 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 10000 At Any Ra ted Load Condition And With Rated VRRM App lied Following Surge. Initial TJ = 150°C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 7000 6000 5000 4000 VSK.320.. Series Per Junc tion 3000 10000 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 29 - Forward Power Loss Characteristics 10 TJ= 150°C 1000 VSK.320.. Series Per Junc tion 100 0.5 2000 1 TJ= 25°C 100 9000 8000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 150°C No Vo ltage Reap plied Rated VRRM Reap plied 7000 6000 5000 4000 3000 2000 0.01 VSK.320.. Series Per Junc tio n 0.1 1 Pulse Train Dura tion (s) Fig. 31 - Maximum Non-Repetitive Surge Current 1.5 2 2.5 3 3.5 4 Fig. 32 - Forward Voltage Drop Characteristics Transient Thermal Impedanc e Z thJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 30 - Maximum Non-Repetitive Surge Current 10000 1 Instantaneous Forward Voltage (V) Numb er Of Equal Amplitude Half Cyc le Current Pulses (N) 1 Steady State Value: RthJC = 0.45 K/ W (DC Operation) 0.1 0.01 VSK.320.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 33 - Thermal Impedance ZthJC Characteristics Revision: 03-Apr-2019 Document Number: 93581 10 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS KD 320 1 2 3 - 24 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see Circuit Configuration table) 3 - Current rating: IF(AV) rounded 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... Two diodes doubler circuit - + ~ KD - + ~ VSKC... + Two diodes common cathode - - KC + - - VSKE... + Single diode - KE + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95086 Revision: 03-Apr-2019 Document Number: 93581 11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) Ø 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes • Dimensions are nominal • Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000