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VS-VSKD600-20PBF

VS-VSKD600-20PBF

  • 厂商:

    TFUNK(威世)

  • 封装:

    SUPERMAGN-A-PAK

  • 描述:

    MODULE DIODE 2000V 600A MAGNAPAK

  • 数据手册
  • 价格&库存
VS-VSKD600-20PBF 数据手册
VS-VSKD600 Series www.vishay.com Vishay Semiconductors Standard Diodes (Super MAGN-A-PAK Power Modules), 600 A FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Super MAGN-A-PAK TYPICAL APPLICATIONS • Rectifying bridge for large motor drives PRIMARY CHARACTERISTICS IF(AV) 600 A Type Modules - diode, high voltage Package Super MAGN-A-PAK Circuit configuration Two diodes doubler circuit • Rectifying bridge for large UPS   MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) TC IF(RMS) TC IFSM VALUES UNITS 600 A 100 °C 942 A 100 °C 50 Hz 19 000 60 Hz 20 100 A 50 Hz 1805 60 Hz 1683 18 050 kA2s VRRM Range 800 to 2000 V TStg, TJ Range -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA I2t I2t kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKD600.. VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 50 Revision: 05-Jan-18 Document Number: 93583 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM TEST CONDITIONS 180° conduction, half sine wave Maximum for fusing °C 942 A t = 10 ms 19.0 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t A 100 t = 8.3 ms I2t UNITS 600 180° conduction, half sine wave at TC = 100 °C t = 10 ms I2t VALUES No voltage reapplied 100 % VRRM reapplied No voltage reapplied 20.1 16.2 Sinusoidal half wave, initial TJ = TJ maximum 17.2 1805 1683 100 % VRRM reapplied kA 1319 kA2s 1230 t = 0.1 ms to 10 ms, no voltage reapplied 18 050 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.70 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.77 kA2s V Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.28 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.25 Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse 1.45 V VALUES UNITS 3000 V 50 mA VALUES UNITS -40 to +150 °C Maximum forward voltage drop VFM m BLOCKING PARAMETER SYMBOL TEST CONDITIONS RMS insulation voltage VINS t=1s Maximum peak reverse and off-state leakage current IRRM TJ = TJ maximum, rated VRRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage  temperature range TJ, TStg Maximum thermal resistance,  junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs Mounting torque ± 10 % TEST CONDITIONS DC operation 0.065 Mounting surface smooth, flat and greased 0.02 K/W Super MAGN-A-PAK to heatsink busbar to Super MAGN-A-PAK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Approximate weight 6 to 8 12 to 15 1500 Case style See dimensions - link at the end of datasheet Nm g Super MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 05-Jan-18 Document Number: 93583 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series VSKD600.. Series RthJC (DC) = 0.065 K/W 140 130 Conduction Angle 120 110 100 30° 90° 120° 90 180° 80 0 Maximum Allowable Case Temperature (°C) 60° 100 200 300 400 500 600 Maximum Average Forward Power Loss (W) 150 Vishay Semiconductors 1000 800 700 600 500 400 RMS Limit Conduction Period 300 VSKD600.. Series Per Junction TJ = 150°C 200 100 0 700 0 200 400 600 800 1000 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 150 VSKD600.. Series R thJC (DC) = 0.065 K/W 140 130 120 Conduction Period 110 60° 100 30° 90° 90 120° 180° DC 80 18000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150°C @ 60 Hz 0.0083 s 14000 @ 50 Hz 0.0100 s 16000 12000 10000 8000 VSKD600.. Series Per Junction 6000 4000 0 200 400 600 800 1000 1 700 180° 120° 90° 60° 30° 500 RMS Limit 400 300 Conduction Angle 200 VSKD600.. Series Per Junction TJ = 150°C 100 0 0 100 200 300 400 500 100 600 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A ) Fig. 2 - Current Ratings Characteristics 600 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 900 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 20000 18000 16000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 14000 12000 10000 8000 6000 4000 0.01 VSKD600.. Series Per Junction 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 05-Jan-18 Document Number: 93583 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series Vishay Semiconductors 1000 = W K/ W K/ 2 0.0 W K/ -D ta el 180° (Sine) SA 4 K/ W 0. 12 K/ W 0.1 6K /W 800 600 6 0. 08 DC R th 0 0. 0 0. 0.2 5 400 VSKD600.. Series Per Junction TJ = 150°C 200 R Maximum Total Forward Power Loss (W) www.vishay.com K/ W 0.3 5K /W 0.5 K /W 0 0 200 400 600 800 1000 0 Total RMS Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 7 - Forward Power Loss Characteristics SA = /W 1K 0.0 K/ W 4K / W 0.0 5K /W 0. 0 -D ta el 1500 R th 2000 W K/ 0. 03 180° (Sine) 180° (Rect) 2500 02 0. 0.0 8K /W 0.12 1000 R Maximum Total Power Loss (W) 3000 K/ W 2 x VSKD600.. Series 0.2 K /W Single Phase Bridge Connected TJ = 150°C 500 0 0 200 400 600 800 1000 1200 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C ) Fig. 8 - Forward Power Loss Characteristics R th 4000 SA 0. 02 3000 1500 0.08 3 x VSKD600.. Series Three Phase Bridge Connected T J = 150°C 1000 500 R 0.0 5 ta el 2000 -D 2500 W K/ K/ W 0.0 3K /W 120° (Rect) 01 0. 3500 = Maximum Total Power Loss (W) 4500 K/ W K/ W 0.12 K /W 0.2 K/ W 0 0 300 600 900 1200 1500 Total Output Current (A) 1800 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C ) Fig. 9 - Forward Power Loss Characteristics Revision: 05-Jan-18 Document Number: 93583 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series www.vishay.com Transient Thermal Impedance Z thJC (K/W ) Vishay Semiconductors 0.1 VSKD600.. Series Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE Device code VS-VS KD 2 1 600 - 3 20 4 1 - Vishay Semiconductors product 2 - Circuit configuration D = two diodes in series 3 - Current rating 4 - Voltage code x 100 = VRRM (see voltage ratings table) (see circuit configuration table) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE Two diodes doubler circuit KD CIRCUIT DRAWING 3 - 2 + ~ 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95088 Revision: 05-Jan-18 Document Number: 93583 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Diode 52 (2.05) DIMENSIONS in millimeters (inches) Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) 1 3 2 26.0 (0.98) 26.0 (0.98) 28.0 (1.10) 48.0 (1.89) 60.0 (2.36) M10 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) Revision: 05-Dec-2019 Document Number: 95088 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode DIMENSIONS in millimeters (inches) 18 (0.71) max. 52 (2.05) 19 (0.75) Ø 6.5 mm ± 0.3 mm x 4 holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 1 3 2 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 5 4 6 7 28.0 (1.10) 48.0 (1.89) M10 17.8 (0.70) 9.9 ± 0.5 (0.39 ± 0.02) 60.0 (2.36) 48 (1.90) 17 (0.67) max. 4.5 (0.20) 36.4 (1.14) 5, 6 = Gate 4, 7 = Cathode 1.0 (0.039) 149.0 (5.67) Revision: 14-Dec-16 Document Number: 95283 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
VS-VSKD600-20PBF 价格&库存

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VS-VSKD600-20PBF
  •  国内价格 香港价格
  • 1+4078.863771+510.17240
  • 3+3441.213813+430.41700
  • 10+3276.3354910+409.79450

库存:0