VS-VSKD71/08

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Standard Diodes, 80 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AAP Gen 7 (TO-240AA) BENEFITS PRIMARY CHARACTERISTICS IF(AV) 80 A Type Modules - Diode, High Voltage Package AAP Gen 7 (TO-240AA) Circuit configuration Two diodes doubler circuit, two diodes common cathode, two diodes common anode, single diode MECHANICAL DESCRIPTION The AAP Gen 7 (TO-240AA), new generation of AAP module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS I2t A TC 110 °C 50 Hz 1500 60 Hz 1570 126 TStg, TJ A 50 Hz 11.25 60 Hz 10.26 Range 400 to 1600 V -40 to +150 °C I2√t VRRM UNITS 80 IF(RMS) IFSM VALUES 112.5 kA2s kA2√s Revision: 05-Jan-2018 Document Number: 94626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 VS-VSK.71 IRRM MAXIMUM AT TJ = 150 °C mA 10 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t UNITS 80 A 110 °C 126 t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current VALUES t = 8.3 ms t = 10 ms t = 8.3 ms 1500 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 1570 A 1260 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 1320 11.25 10.26 7.95 kA2s 7.23 t = 0.1 ms to 10 ms, no voltage reapplied 112.5 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.73 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.83 kA2√s V Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 3.22 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 2.89 VFM IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave 1.6 V SYMBOL TEST CONDITIONS VALUES UNITS 10 mA 3000 (1 min) 3600 (1 s) V Maximum forward voltage drop mΩ BLOCKING PARAMETER Maximum peak reverse leakage current IRRM TJ = 150 °C Maximum RMS insulation voltage VINS 50 Hz Revision: 05-Jan-2018 Document Number: 94626 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -40 to +150 °C Maximum internal thermal resistance, junction to case per leg RthJC DC operation 0.28 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.1 °C/W to heatsink Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. busbar Approximate weight JEDEC® Case style 4 Nm 3 75 g 2.7 oz. AAP Gen 7 (TO-240AA) ΔR CONDUCTION PER JUNCTION DEVICES VSK.71 SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.075 0.088 0.113 0.155 0.228 0.06 0.094 0.12 0.158 0.23 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 05-Jan-2018 Document Number: 94626 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series Maximum average forward power loss (W) 150 RthJC (DC) = 0.28°C/W 140 130 120 110 180° 120° 90° 60° 30° 100 90 0 Maximum allowable case temperature (°C) Vishay Semiconductors 20 40 60 80 180° 120° 90° 60° 30° 140 120 DC 100 80 RMS limit 60 40 20 Per leg, Tj = 150°C 0 100 0 20 40 60 80 100 120 140 Average forward current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Foward Power Loss Characteristics 1400 150 RthJC (DC) = 0.28°C/W 140 130 120 DC 180° 120° 90° 60° 30° 110 100 90 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1200 1000 800 600 Per leg 400 0 20 40 60 80 100 120 140 1 10 100 Number of equal amplitude half cycle current pulses (N) Average forward current (A) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Ratings Characteristics 1600 120 180° 120° 90° 60° 30° 100 80 RMS limit 60 40 20 Per leg, Tj = 150°C 0 0 10 20 30 40 50 60 70 80 90 Average forward current (A) Fig. 3 - Forward Power Loss Characteristics Peak half sine wave forward current (A) Maximum average forward power loss (W) 160 Average forward current (A) Peak half sine wave forward current (A) Maximum allowable case temperature (°C) www.vishay.com 1400 1200 Maximum Non-repetitive Surge Current Versus Pulse Train Duration Initial Tj = 150°C No Voltage Reapplied Rated Vrrm reapplied 1000 800 600 400 200 0.01 Per leg 0.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 05-Jan-2018 Document Number: 94626 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors Maximum total forward power loss (W) 160 140 RthSA = 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 3 °C/W 7 °C/W 0 120 0 180° (Sine) 100 0 DC 80 0 60 0 40 0 VSK.71 Series Per leg Tj = 150°C 20 0 0 20 40 60 80 0 0 100 120 140 0 20 Total RMS output current (A) 40 60 80 100 120 140 16 Maximum allowable ambient temperature (°C) Fig. 7 - Forward Power Loss Characteristics Maximum total power loss (W) 600 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 2 °C/W 180° (sine) 180° (rect) 500 400 300 200 2 x VSK.71 Series single phase bridge connected Tj = 150°C 100 0 0 50 100 150 Total output current (A) 0 20 200 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig. 8 - Forward Power Loss Characteristics Maximum total power loss (W) 600 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.4 °C/W 0.7 °C/W 1.5 °C/W 500 400 120° (rect) 300 200 3 x VSK.71 Series three phase bridge connected Tj = 150°C 100 0 0 50 100 150 Total output current (A) 200 0 20 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig. 9 - Forward Power Loss Characteristics Revision: 05-Jan-2018 Document Number: 94626 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors Instantaneous forward current (A) 1000 Per leg 100 10 Tj = 150°C Tj = 25°C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous forward voltage (V) Transient thermal impedance Z thJC (°C/W) Fig. 10 - Forward Voltage Characteristics 1 Steady state value RthJC = 0.28 °C/W (DC operation) 0.1 Per leg 0.01 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS K D 71 1 2 3 4 / 16 5 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see Circuit Configuration table) 4 - Current code (80 A) 5 - Voltage code (see Voltage Ratings table) Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 05-Jan-2018 Document Number: 94626 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ + (1) Two diodes doubler circuit (2) D (3) 3 2 1 VSKC... + - Two diodes common cathode (2) (1) C (3) 3 2 1 VSKJ... Two diodes common anode + + (2) (1) J (3) 3 2 1 VSKE... + - (1) (3) (2) Single diode E 2 3 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95369 Revision: 05-Jan-2018 Document Number: 94626 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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