VS-VSKDS400/045
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Vishay Semiconductors
AAP Gen 7 (TO-240AA)
Power Modules Schottky Rectifier, 200 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AAP Gen 7 (TO-240AA)
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
IF(AV)
200 A
• High surge capability
VR
45 V
• Easy mounting on heatsink
Package
AAP Gen 7 (TO-240AA)
Circuit configuration
Two diodes doubler circuit
MECHANICAL DESCRIPTION
The AAP Gen 7, new generation of ADD-A-PAK module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION / APPLICATIONS
The VS-VSKDS400/045 Schottky rectifier doubler has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
100 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
200
A
45
V
29 000
A
0.5
V
-55 to +150
°C
VS-VSKDS400/045
UNITS
45
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Revisio: 03-May-17
Document Number: 94640
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS400/045
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 91 °C, rectangular waveform
VALUES
UNITS
200
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 19 A, L = 1 mH
180
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
40
A
TEST CONDITIONS
VALUES
UNITS
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Repetitive avalanche current
Following any rated
load condition and with
rated VRRM applied
29 000
A
3400
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
200 A
Maximum forward voltage drop
VFM
400 A
200 A
400 A
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Maximum RMS insulation voltage
VINS
TJ = 125 °C
Rated VR
50 Hz
0.67
0.92
0.73
V
1.14
20
mA
1.2
A
10 300
pF
5.0
nH
10 000
V/μs
3000 (1 min)
3600 (1 s)
V
VALUES
UNITS
-55 to +150
°C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Typical thermal resistance,
case to heatsink per module
RthCS
DC operation
°C/W
0.1
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
0.26
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC®
75
g
2.7
oz.
4
Nm
3
TO-240AA compatible
Revisio: 03-May-17
Document Number: 94640
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS400/045
Vishay Semiconductors
10 000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
150 °C
1000
125 °C
100 °C
100
75 °C
10
50 °C
25 °C
1
0.1
1
0.0
0.3
0.6
0.9
1.2
1.5
0
10
VFM - Forward Voltage Drop (V)
20
30
40
50
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.01
0.001
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revisio: 03-May-17
Document Number: 94640
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS400/045
Vishay Semiconductors
250
160
Square wave (D = 0.50)
80 % rated VR applied
140
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
120
100
DC
80
60
40
20
200
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
150
100
50
RMS limit
DC
see note (1)
0
0
0
100
200
300
400
0
500
100
150
200
250
300
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
50
Fig. 6 - Forward Power Loss Characteristics
100 000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
10 000
1000
10
100
1000
10 000
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revisio: 03-May-17
Document Number: 94640
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKDS400/045
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS KD
1
2
S
40
0
3
4
5
/
045
6
1
-
VS-VS = Vishay Semiconductors product
2
-
Circuit configuration:
3
-
S = Schottky diode
4
-
Average rating (x 10)
5
-
Product silicon identification
6
-
Voltage rating (045 = 45 V)
KD = ADD-A-PAK - 2 diodes doubler circuit
CIRCUIT CONFIGURATION
(1)
~
(2)
+
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revisio: 03-May-17
Document Number: 94640
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
24 ± 0.5
(1 ± 0.020)
6.7 ± 0.3 (0.26 ± 0.012)
Viti M5 x 0.8
Screws M5 x 0.8
Document Number: 95369
Revision: 11-Nov-08
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
15 ± 0.5 (0.59 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 01-Jan-2022
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Document Number: 91000