VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
Standard Recovery Diodes
(MAGN-A-PAK Power Modules), 250 A to 320 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MAGN-A-PAK
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
250 A to 320 A
Type
Modules - diode, high voltage
Package
MAGN-A-PAK
Circuit
configuration
Two diodes doubler circuit,
two diodes common cathode, single diode
This VS-VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode.
These modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, etc.)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
I2t
I2t
VRRM
TJ
VSK.270..
VSK.320..
UNITS
250
270
320
A
TC
100
100
100
°C
393
424
502
50 Hz
7015
8920
10 110
60 Hz
7345
9430
10 580
IF(RMS)
IFSM
VSK.250..
A
50 Hz
246
398
511
60 Hz
225
363
466
2460
3980
5110
kA2s
400 to 2000
400 to 3000
400 to 2000
V
-40 to +150
kA2s
°C
Revision: 03-Apr-2019
Document Number: 93581
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
VS-VSK.270
VS-VSK.320
VS-VSK.250
VS-VSK.270
VS-VSK.320
VS-VSK.270
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
30
3000
3100
IRRM MAXIMUM
AT 150 °C
mA
50
FORWARD CONDUCTION
PARAMETER
Maximum average forward
current at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
IF(AV)
IF(RMS)
TEST CONDITIONS
320
A
100
100
100
°C
As AC switch
393
424
502
t = 10 ms
7015
8920
10 110
7345
9340
10 580
5900
7500
8500
6180
7850
8900
246
398
511
225
363
466
174
281
361
159
257
330
t = 0.1 ms to 10 ms, no voltage reapplied
2460
3980
5110
t = 10 ms
t = 10 ms
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
No voltage
reapplied
100 %
VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial
TJ = TJ maximum
100 %
VRRM
reapplied
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
0.79
0.74
0.69
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.92
0.87
0.86
Low level forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
0.63
0.94
0.59
High level forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.49
0.81
0.44
IFM = x IF(AV), TJ = TJ maximum, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.29
1.48
1.28
VFM
A
kA2s
Low level value of threshold voltage
Maximum forward voltage drop
UNITS
270
t = 8.3 ms
Maximum I2t for fusing
VSK.250 VSK.270 VSK.320
250
180° conduction, half sine wave
t = 8.3 ms
IFSM
VALUES
kA2s
V
m
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
VALUES
UNITS
50
mA
3000
V
Revision: 03-Apr-2019
Document Number: 93581
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
VALUES
TEST CONDITIONS
VSK.250
TJ, TStg
VSK.270
VSK.320
-40 to +150
UNITS
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum resistance, case to heat sink
per module
RthCS
Mounting surface flat, smooth and
greased
0.035
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow
for the spread of the compound.
4 to 6
Nm
800
g
30
oz.
Mounting
torque
± 10 %
MAGN-A-PAK to heatsink
Busbar to MAGN-A-PAK
0.16
0.125
0.125
K/W
Approximate weight
Case style
MAGN-A-PAK
R CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICE
180°
120°
90°
60°
30°
180°
120°
90°
60°
UNITS
30°
VSK.250
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.021
0.033
VSK.270
0.008
0.012
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
VSK.320
0.008
0.010
0.013
0.020
0.032
0.007
0.011
0.015
0.020
0.033
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 03-Apr-2019
Document Number: 93581
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
Maximum Allowable Case Temperature (°C)
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Vishay Semiconductors
150
VSK.250.. Series
R thJC (DC) = 0.16 K/ W
140
130
Conduction Angle
120
110
100
30°
60°
90
90°
120°
180°
80
0
50
100
150
200
250
300
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Forward Power Loss Characteristics
Revision: 03-Apr-2019
Document Number: 93581
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
