VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. Series
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Vishay Semiconductors
AAP Gen 7 (TO-240AA)
Power Modules Standard Diodes, 60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
• Up to 1600 V
IF(AV)
60 A
Type
Modules - diode, high voltage
Package
AAP Gen 7 (TO-240AA)
Circuit configuration
Two diodes doubler circuit, two
diodes common cathode, two diodes
common anode, single diode
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
• High surge capability
• Easy mounting on heat sink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
I2t
A
TC
114
°C
50 Hz
1300
60 Hz
1360
94
50 Hz
8.44
60 Hz
7.68
I2t
VRRM
UNITS
60
IF(RMS)
IFSM
VALUES
84.5
Range
A
kA2s
kA2s
400 to 1600
V
TStg
-40 to +150
°C
TJ
-40 to +150
°C
Revision: 18-Sep-2018
Document Number: 94625
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
06
600
700
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
VS-VSK.56
IRRM MAXIMUM
AT TJ = 150 °C
mA
10
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
IFSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
UNITS
60
A
114
°C
94
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
VALUES
t = 8.3 ms
1300
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
1360
Sinusoidal half wave,
initial TJ = TJ maximum
1140
8.44
7.68
100 % VRRM
reapplied
5.43
t = 0.1 ms to 10 ms, no voltage reapplied
84.5
t = 10 ms
t = 8.3 ms
A
1090
5.97
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.74
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.86
kA2s
kA2s
V
Low level value of forward
slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
3.94
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
3.43
VFM
IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave
1.6
V
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10
mA
3000 (1 min)
3600 (1 s)
V
Maximum forward voltage drop
m
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
Maximum RMS insulation voltage
VINS
50 Hz
Revision: 18-Sep-2018
Document Number: 94625
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
-40 to +150
°C
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.33
Typical thermal resistance,
case to heat sink per module
RthCS
Mounting surface flat, smooth and greased
0.1
°C/W
to heatsink
Mounting torque ± 10 %
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
busbar
Approximate weight
JEDEC®
Case style
4
Nm
3
75
g
2.7
oz.
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
VSK.56
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.115
0.136
0.173
0.236
0.346
0.09
0.145
0.185
0.243
0.349
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 18-Sep-2018
Document Number: 94625
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VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. Series
Maximum average forward power loss (W)
150
RthJC (DC) = 0.33°C/W
140
130
120
180°
120°
90°
60°
30°
110
100
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
50
60
80
180°
120°
90°
60°
30°
60
RMS limit
100
DC
40
20
Per leg, Tj = 150°C
0
70
0
20
40
60
80
100
Average forward current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
RthJC (DC) = 0.33°C/W
140
130
120
DC
110
180°
120°
90°
60°
30°
1200
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1000
800
600
400
Per leg
200
100
0
20
40
60
80
1
100
10
100
Number of equal amplitude half cycle current pulses (N)
Average forward current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
90
1400
180°
120°
90°
60°
30°
80
70
60
Peak half sine wave forward current (A)
Maximum average forward power loss (W)
120
Average forward current (A)
Peak half sine wave forward current (A)
Maximum allowable case temperature (°C)
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RMS limit
50
40
30
20
10
Per leg, Tj = 150°C
0
0
10
20
30
40
50
60
70
Average forward current (A)
Fig. 3 - Forward Power Loss Characteristics
1200
1000
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150°C
No Voltage Reapplied
Rated Vrrm reapplied
800
600
400
200
0.01
Per leg
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Sep-2018
Document Number: 94625
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Maximum total forward power loss (W)
120
0
RthSA = 0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
7 °C/W
0
100
80
0
180°
(Sine)
DC
60
0
40
0
20
VSK.56 Series
0
Per leg,
Tj = 150°C
0
0
20
40
60
80
0
100
0 20
Total RMS output current (A)
40
60
80 100 120 140 160
Maximum allowable ambient temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Maximum total power loss (W)
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
180°
(sine)
180°
(rect)
400
300
200
100
2 x VSK.56 Series
single phase bridge connected
Tj = 150°C
0
0
20
40
60
80 100 120 140 160
0 20
Total output current (A)
40
60
80 100 120 140 160
Maximum allowable ambient temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Maximum total power loss (W)
500
RthSA = 0.3°C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
400
120°
(rect)
300
200
100
3 x VSK.56 Series
three phase bridge connected
Tj = 150°C
0
0
20
40
60
80 100 120 140 160
0 20
Total output current (A)
40
60
80 100 120 140 160
Maximum allowable ambient temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Revision: 18-Sep-2018
Document Number: 94625
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Instantaneous forward current (A)
1000
Per leg
100
10
Tj = 150°C
Tj = 25°C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous forward voltage (V)
Transient thermal impedance Z thJC (°C/W)
Fig. 10 - Forward Voltage Characteristics
1
Steady state value
RthJC = 0.33 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
D
56
1
2
3
4
/
16
5
1
-
Vishay Semiconductors product
2
-
Module type
3
-
Circuit configuration (see Circuit Configuration table)
4
-
Current code (60 A)
5
-
Voltage code (see Voltage Ratings table)
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 18-Sep-2018
Document Number: 94625
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. Series
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
VSKD...
~
+
(1)
Two diodes doubler circuit
(2)
(3)
D
3
2
1
VSKC...
+
-
Two diodes common cathode
(2)
(1)
(3)
C
3
2
1
VSKJ...
Two diodes common anode
+
+
(2)
(1)
(3)
J
3
2
1
VSKE...
+
-
(1)
(3)
(2)
Single diode
E
2
3
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 18-Sep-2018
Document Number: 94625
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
24 ± 0.5
(1 ± 0.020)
6.7 ± 0.3 (0.26 ± 0.012)
Viti M5 x 0.8
Screws M5 x 0.8
Document Number: 95369
Revision: 11-Nov-08
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
15 ± 0.5 (0.59 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
For technical questions, contact: indmodules@vishay.com
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1
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