VS-VSKEU300/12PbF
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Vishay Semiconductors
HEXFRED® Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
• Electrically isolated: DCB base plate
• Standard JEDEC® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Case style INT-A-PAK
• Designed and qualified for industrial level
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
PRIMARY CHARACTERISTICS
VR
1200 V
VF (typical) at 300 A at 25 °C
2.18 V
• Product reliability results valid for TJ = 150 °C
• Recommended operation temperature Top = 150 °C
trr (typical) at 45 A
233 ns
IF(DC) at TC
300 A at 60 °C
Package
INT-A-PAK
Circuit configuration
Single diode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
Continuous forward current
IF
Single pulse forward current
IFSM
Maximum power dissipation
PD
RMS isolation voltage
TEST CONDITIONS
VALUES
UNITS
1200
V
VR
VISOL
TC = 25 °C
375
TC = 60 °C
300
TJ = 25 °C
2400
TC = 25 °C
1040
TC = 60 °C
750
50 Hz, circuit to base, all terminal shorted, t = 1 s
A
W
3500
V
Junction temperature range
TJ
-40 to +150
Storage temperature range
TStg
-40 to +150
°C
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode breakdown voltage
VBR
Maximum forward voltage
VFM
Maximum reverse leakage current
IRM
Revision: 09-Nov-2020
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 300 A
-
2.18
2.23
IF = 300 A, TJ = 150 °C
-
2.24
2.47
VR = 1200 V
-
0.06
0.2
TJ = 150 °C, VR = 1200 V
-
-
20
IR = 500 μA
UNITS
V
mA
Document Number: 94670
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Diode reverse recovery charge
Qrr
Reverse recovery time
trr
Reverse recovery current
Irr
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
3.5
-
TJ = 125 °C
-
10.4
-
-
233
-
-
396
-
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 45 A
VR = 400 V
dIF/dt = 500 A/μs
TJ = 125 °C
-
30
-
-
53
-
UNITS
μC
ns
A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.12
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth, and greased
0.05
°C/W
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
4 to 6
Nm
200
g
7.1
oz.
Case style
INT-A-PAK
100
1000
IRM Reverse current (mA)
IF - Instantaneous Forward Current (A)
UNITS
TJ = 150 °C
100
TJ = 125 °C
175 °C
10
150 °C
1
125 °C
0.1
25 °C
TJ = 25 °C
0.01
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 09-Nov-2020
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Value of Reverse Current vs. Reverse Voltage
Document Number: 94670
2
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
175
150
125
100
DC
75
Square wave (D = 0.50)
80 % rated VR applied
50
25
0
0
50
100
150
200
250
300
350
400
IF(AV) - Average Forward Current (A)
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance RthJC Characteristics
700
1600
RMS limit
600
1200
125 °C
1000
500
trr (ns)
Average Power Loss (W)
1400
800
600
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
400
200
0
0
40
80 120 160 200 240 280 320 360 400
400
300
25 °C
200
100
200
300
400
500
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Revision: 09-Nov-2020
Document Number: 94670
3
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
12300
55
50
10300
45
125 °C
40
125 °C
35
Irr (A)
Qrr (nC)
8300
6300
4300
30
25
25 °C
20
25 °C
15
2300
10
300
5
100
200
300
400
500
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt
Fig. 8 - Typical Reverse Recovery Current vs. dIF/dt
ORDERING INFORMATION TABLE
Device code
VS-VS KE
1
2
U
300
3
4
/
12
PbF
5
6
1
-
Vishay Semiconductors product
2
-
KE = circuit configuration
3
-
U = ultrafast diode
4
-
Current rating 300 = 300 A
5
-
Voltage rating (12 = 1200 V)
6
-
PbF = lead (Pb)-free
CIRCUIT CONFIGURATION
1
Revision: 09-Nov-2020
3
Document Number: 94670
4
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
28 (1.10)
9 (0.33)
30 (1.18)
DIMENSIONS in (inches) millimeters INT-A-PAK DBC
Ø 6.5 (Ø 0.25)
80 (3.15)
7
6
5
4
14.5
46 (1.82)
(0.57)
35 (1.38)
17 (0.67)
1
2
66 (2.60)
3
37 (1.44)
2 screws M6 x 10
94 (3.70)
Revision: 09-Nov-2020
Document Number: 94670
5
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
28 (1.10)
9 (0.33)
30 (1.18)
DIMENSIONS in millimeters (inches)
Ø 6.5 (Ø 0.25)
80 (3.15)
23 (0.91)
7
6
5
4
14.5
23 (0.91)
(0.57)
35 (1.38)
17 (0.67)
1
2
3
66 (2.60)
37 (1.44)
3 screws M6 x 10
94 (3.70)
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000
