VS-VSKH430-16PBF

VSK.430..PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 430 A (SUPER MAGN-A-PAK Power Modules) FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS SUPER MAGN-A-PAK • Motor starters • DC motor controls - AC motor controls PRODUCT SUMMARY • Uninterruptible power supplies IT(AV) 430 A Type Modules - Thyristor Package SMAP Circuit Two SCRs doubler circuit • Wind mill MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) TC IT(RMS) TC ITSM I2t VALUES 430 A 82 °C 675 A 82 °C 50 Hz 15.7 60 Hz 16.4 50 Hz 1232 60 Hz 1125 I2t UNITS kA kA2s 12 320 kA2s V VRRM Range 1600 to 2000 TJ Range - 40 to 150 TStg Range - 40 to 130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.430.. Revision: 20-Aug-13 VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 18 1800 1900 20 2000 2100 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 Document Number: 93748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSK.430..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 430 A 82 °C A Maximum average on-state current  at case temperature IT(AV), IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 675 t = 10 ms 15.7 Maximum peak, one-cycle, non-repetitive surge current ITSM, IFSM t = 8.3 ms t = 8.3 ms I2t t = 8.3 ms Maximum for fusing No voltage reapplied 13.2 Sinusoidal half wave, initial TJ = TJ maximum 13.8 1232 1125 871 t = 0.1 ms to 10 ms, no voltage reapplied 12 320 t = 8.3 ms I2t 100 % VRRM reapplied 100 % VRRM reapplied t = 10 ms I2t 16.4 kA t = 10 ms t = 10 ms Maximum I2t for fusing No voltage reapplied kA2s 795 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.96 High level value of threshold voltage VF(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.06 kA2s V Low level value of on-state slope resistance rf1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.51 High level value of on-state slope resistance rf2 (I >  x IT(AV)), TJ = TJ maximum 0.45 Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V Maximum holding current Typical latching current IH IL m 500 TJ = 25 °C, anode supply 12 V resistive load mA 1000 SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs VR = 50, dV/dt = 20 V/μs, Gate 0 V 100  VALUES UNITS 1000 A/μs 2.0 200 μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/μs RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 20-Aug-13 Document Number: 93748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSK.430..PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating  temperature range TEST CONDITIONS VALUES TJ - 40 to 130 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance,  junction to case per junction RthJC Maximum thermal resistance, case to heatsink RthC-hs °C 0.065 K/W 0.02 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. SMAP to heatsink Mounting torque ± 10 % DC operation UNITS busbar to SMAP 6 to 8 Nm 12 to 15 Approximate weight 1500 Case style See dimensions - link at the end of datasheet g SUPER MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Maximum Allowable Case Temperature (°C) 130 VSK.430..PbF Series R thJC (DC) = 0.065 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 100 200 300 400 50 Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 VSK.430..PbF Series R thJC (DC) = 0.065 K/W 120 110 Conduction Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Revision: 20-Aug-13 Document Number: 93748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSK.430..PbF Series Vishay Semiconductors 700 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) www.vishay.com 180° 120° 90° 60° 30° 600 500 400 RMS Limit 300 Conduction Angle 200 VSK.430..PbF Series Per Junction TJ = 130°C 100 0 0 100 200 300 400 15000 12000 11000 10000 9000 8000 6000 500 1 Peak Half Sine Wave On-state Current (A) RMS Limit 400 Conduction Period VSK.430..PbF Series Per Junction TJ = 130°C 200 100 0 0 100 200 300 400 500 600 16000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied 15000 14000 13000 12000 11000 10000 9000 8000 7000 VSK.430..PbF Series Per Junction 6000 0.01 700 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current 800 5K 0 .0 K/ W = K/ W A K/ W /W 0. 2 500 R th S Conduction Angle 0. 16 W K/ 600 09 0. 12 180° 120° 90° 60° 30° 700 0. -D 300 /W K/ W 0.6 K / 200 R 0.3 K 0.4 a 400 e lt Maximum Total On-state Power Loss (W) Maximum Average On-state Power Loss (W) 500 300 100 Fig. 5 - Maximum Non-Repetitive Surge Current DC 180° 120° 90° 60° 30° 600 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1000 700 VSK.430..PbF Series Per Junction 7000 Fig. 3 - On-State Power Loss Characteristics 800 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 13000 Average On-state Current (A) 900 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 130°C 14000 W VSK.430..PbF Series Per Module TJ = 130°C 100 0 0 100 200 300 400 500 600 Total RMS Output Current (A) 700 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics Revision: 20-Aug-13 Document Number: 93748 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSK.430..PbF Series www.vishay.com Vishay Semiconductors 1. 5 1 W K/ K/ W - 2000 K/ W = 2 SA 180° (Sine) 180° (Rect) 2500 R th D e 3K /W lt a R Maximum Total Power Loss (W) 3000 1500 5K 1000 /W 10 K /W 2 x VSK.430..PbF Series 15 K/ W Single Phase Bridge Connected T J = 130 °C 500 0 0 100 200 300 400 500 600 700 800 900 0 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C ) Fig. 8 - On-State Power Loss Characteristics R 4500 0. 4000 120° (Rect) 3500 3000 2500 2000 0.0 3 x VSK.430..PbF Series Three Phase Bridge Connected TJ = 130°C 500 0 0 200 400 600 K/ W = 0. 0 05 K/ W -D el ta R 5K /W 0.1 K/ W 0.2 K/ W 800 1000 1200 1400 0 Total Output Current (A) 01 0. 02 K/ W 0.0 3K /W 1500 1000 SA th Maximum Total Power Loss (W) 5000 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Instantaneous On-state Current (A) 10000 TJ = 25 °C TJ = 130°C 1000 VSK.430..PbF Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Revision: 20-Aug-13 Transient Thermal Impedance Z thJC (K/W) Fig. 9 - On-State Power Loss Characteristics 0.1 VSK.430..PbF Series Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Document Number: 93748 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSK.430..PbF Series www.vishay.com Vishay Semiconductors 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr