VS-VSKL136/12PBF

VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power thyristor/diodes in three basic configurations • Simple mounting • UL approved file E78996 INT-A-PAK • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IT(AV) 135 A to 160 A Type Modules - thyristor, standard Package INT-A-PAK APPLICATIONS • DC motor control and drives • Battery charges • Welders • Power converters • Lighting control • Heat and temperature control MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS 135 140 160 A 300 310 355 50 Hz 3200 4500 4870 60 Hz 3360 4712 5100 50 Hz 51.5 102 119 60 Hz 47 92.5 108 515.5 1013 1190 400 to 1600 400 to 1600 400 to 1600 85 °C IT(RMS) ITSM I2t I2t VRRM Range TJ Range -40 to +125 A kA2s kA2s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.136 VS-VSK.142 VS-VSK.162 VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IRRM/IDRM AT 125 °C mA 50 Revision: 27-Jul-2018 Document Number: 94513 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle  on-state, non-repetitive  surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM  reapplied No voltage reapplied Sine half wave, initial TJ =  TJ maximum 100 % VRRM  reapplied t = 0.1 ms to 10 ms, no voltage reapplied VSK.136 VSK.142 VSK.162 135 140 UNITS 160 A °C 85 85 85 300 310 355 3200 4500 4870 3360 4712 5100 2700 3785 4100 2800 3963 4300 51.5 102 119 47 92.5 108 36.5 71.6 84 33.3 65.4 76.7 515.5 1013 1190 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum 0.86 0.83 0.8 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ maximum 1.05 1 0.98 Low level value on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum 2.02 1.78 1.67 High level value on-state slope resistance rt2 (I >  x IT(AV)), TJ maximum 1.65 1.43 1.38 A kA2s kA2s V m Maximum on-state voltage drop VTM ITM =  x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V Maximum forward voltage drop VFM ITM =  x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V Maximum holding current Maximum latching current IH Anode supply = 6 V initial IT = 30 A, TJ = 25 °C 200 IL Anode supply = 6 V resistive load = 1  Gate pulse: 10 V, 100 μs, TJ = 25 °C 400 mA SWITCHING PARAMETER SYMBOL Typical delay time tgd Typical rise time tgr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100  VALUES UNITS 1 2 μs 50 to 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C RMS insulation voltage VINS Critical rate of rise of off-state voltage dV/dt Revision: 27-Jul-2018 Document Number: 94513 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current TEST CONDITIONS VALUES PGM tp  5 ms, TJ = TJ maximum 12 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak negative gate voltage - VGT VGT 10 TJ = 25 °C Maximum gate voltage  that will not trigger VGD Maximum gate current  that will not trigger IGD Maximum rate of rise of  turned-on current dI/dt V 2.5 TJ = TJ maximum IGT A 4 TJ = - 40 °C Maximum required DC  gate current to trigger W 3 tp  5 ms, TJ = TJ maximum TJ = - 40 °C Maximum required DC gate voltage to trigger UNITS Anode supply = 6 V,  resistive load; Ra = 1  1.7 270 TJ = 25 °C 150 TJ = TJ maximum 80 mA 0.3 V 10 mA 300 A/μs TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS TJ -40 to +125 Maximum storage  temperature range TStg -40 to +150 Maximum thermal resistance, junction to case per junction RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth, flat and greased °C 0.18 0.16 K/W IAP to heatsink Mounting torque ± 10 % 0.18 0.05 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. busbar to IAP Approximate weight Case style 4 to 6 Nm 200 g 7.1 oz. INT-A-PAK R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES 180° 120° 90° 60° RECTANGULAR CONDUCTION AT TJ MAXIMUM 30° 180° 120° 90° 60° UNITS 30° VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017 VSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Jul-2018 Document Number: 94513 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com 350 VSK.136.. Series RthJC (DC) = 0.18 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 20 40 60 80 100 120 140 M axim um Averag e O n-state Pow er Loss (W ) Maximum Allowable Case Temperature (°C) 130 Vishay Semiconductors DC 180 120 90 60 30 300 250 200 150 100 C o n d uc tio n P eriod VSK .136.. Se ries Per Junction TJ = 12 5°C 50 0 0 50 Average Forward Current (A) Conduction Period 100 30° 60° 90° 80 120° 180° DC 70 0 50 100 150 200 Pea k H alf Sin e W a ve O n -sta te C urren t (A ) Maximum Allowable Case Temperature (°C) 110 90 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 RMS Limit Conduction Angle VSK.136.. Series Per Junction TJ = 125°C 50 0 0 30 60 90 VSK.136.. Series Per Junction 14 0 0 1 10 100 120 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Ha lf Sine W a ve O n -sta te C urrent (A) Maximum Average On-state Power Loss (W) 180 120 90 60 30 100 In itial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 26 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) 300 150 2 50 12 0 0 250 Fig. 2 - Current Ratings Characteristics 200 2 00 A t A ny R ate d Lo ad Co nditio n A n d W ith R ated VRRM A pplied Follo w ing Surge . 28 0 0 Average On-state Current (A) 250 1 50 Fig. 4 - On-State Power Loss Characteristics 30 0 0 VSK.136.. Series RthJC (DC) = 0.18 K/W 120 1 00 A vera ge O n -sta te C urrent (A) Fig. 1 - Current Ratings Characteristics 130 RM S Lim it 150 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics 35 0 0 Maxim um No n Repetitive Surge Curre nt V ers us Pulse Train D uratio n. C ontrol O f Co nductio n M ay Not Be M aintained. In itial TJ = 125°C No V oltag e Re ap plie d Ra te d V Re ap plie d 30 0 0 RRM 25 0 0 20 0 0 15 0 0 VSK.1 36.. Se ries Pe r Ju nction 10 0 0 0 .0 1 0.1 1 Pulse Tra in D ura tion (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 27-Jul-2018 Document Number: 94513 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors /W .01 = 0 4K SA 0 .0 W W K/ W W - Δ 0 .4 K/ W 0 .6 R 200 K/ K/ K/ C onductio n Angle 250 25 08 300 0. 16 W 350 K/ 0. 180 120 90 60 30 12 400 R th 0. 0. M axim um Tota l O n -sta te Pow e r Loss (W ) 450 K/ W 150 1 K/ W 100 VSK.136.. Se rie s Pe r M odule TJ = 12 5°C 50 0 0 50 100 150 200 250 300 0 Tota l R M S Outp ut C urre nt (A) 25 50 75 1 00 125 M axim um A llowab le Am bient Tem pera ture (°C) Fig. 7 - On-State Power Loss Characteristics hS Rt 90 0 0. K/ W W ΔR 0 .2 K/ - 50 0 08 /W 1K 60 0 12 0.0 180 (Sine ) 180 (Re ct) = 0. W 0. 70 0 K/ 80 0 A 04 M axim um To ta l P o we r Lo ss (W ) 1 0 00 K/ W 40 0 0 .3 5 30 0 2 x VSK.136.. Series Single P hase Brid ge C onnected T J = 125°C 20 0 10 0 K/ W 0. 6 K /W 0 0 55 11 0 165 220 2 07 5 Total O utp ut C urre nt (A) 25 50 75 100 125 M axim um Allowab le Am bient Te m p era ture (°C ) Fig. 8 - On-State Power Loss Characteristics Rt A hS 12 0 0 = 0. 04 W R K/ W 6K / W 0 . 25 Δ 3 x VSK.1 3 6.. Serie s Th ree Ph a se B rid g e C o n n ec te d TJ = 1 2 5°C K/ - 0 .1 60 0 30 0 08 0.1 W 0. 120 (Rec t) 90 0 K/ M a xim u m To ta l Po w e r Lo ss (W ) 15 0 0 K/ W 0 .4 K /W 1 K/ W 0 0 10 0 20 0 3 00 To ta l O u tp u t C u rre nt (A) 4 000 25 50 75 1 00 1 25 M axim u m A llo w a b le A m b ien t Tem p e ra tu re (°C) Fig. 9 - On-State Power Loss Characteristics Revision: 27-Jul-2018 Document Number: 94513 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors 35 0 VSK.142.. Series R thJC (D C ) = 0.18 K/W 120 110 C o nd uctio n Angle 100 30 90 60 90 80 120 180 70 0 30 60 90 1 20 1 50 M axim um Averag e O n -state Pow er Loss (W ) M a xim um Allo w ab le C ase Tem peratur e (°C) 130 DC 180 120 90 60 30 30 0 25 0 20 0 R M S L im it 15 0 C o nd u c tio n Pe rio d 10 0 VSK .1 4 2 .. Se rie s P er Ju n c tio n TJ = 1 2 5°C 50 0 0 50 Fig. 10 - Current Ratings Characteristics VSK.1 4 2 .. Se rie s R thJC (D C ) = 0 .1 8 K /W 120 110 C o n d uc tio n P e rio d 100 30 60 90 90 120 80 180 DC 70 0 50 100 15 0 200 15 0 RMS Lim it 10 0 C o nd uc tio n Angle VSK .142.. Series Per Junction TJ = 12 5°C 0 60 90 1 20 A t A ny Rated Lo ad Co nditio n A n d W ith R ated V RRM A pplied Follo w ing Surge . In itial TJJ= 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 VSK.142.. Series Per Junction 10 100 Fig. 14 - Maximum Non-Repetitive Surge Current 1 50 Pea k H alf Sin e W ave O n -sta te C urren t (A) M axim um A ve ra ge O n -sta te Po w er Lo ss (W ) 180 120 90 60 30 30 45 0 0 1 25 0 0 2 50 N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N ) Fig. 11 - Current Ratings Characteristics 50 2 00 15 0 0 25 0 Averag e O n-state C urrent (A) 20 0 1 50 Fig. 13 - On-State Power Loss Characteristics Peak H a lf Sin e W a ve O n -stat e C urren t (A) M axim um Allow a ble C ase Tem perature (°C) 130 1 00 Averag e O n-state C urren t (A ) A vera ge Forw a rd C urrent (A) 5 00 0 M axim um Non Repetitive Surge Current V e rsus Pulse Train D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . 4 50 0 In itial TJJ= 125°C N o V oltag e Re a pp lied Ra te d VR R M Re a pp lie d 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 VSK.1 42.. Se rie s Pe r Ju nction 1 50 0 0 .0 1 0 .1 1 Averag e O n-state C urren t (A ) Pu lse Tra in D uration (s) Fig. 12 - On-State Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current Revision: 27-Jul-2018 Document Number: 94513 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors R th SA =0 /W W .0 1 K/ W K/ W R - Δ K/ 4K 0 .6 K/ 200 25 W 0 .4 W 0. 08 K/ K/ 300 0. 12 16 180 120 90 60 30 0.0 0. 0. M axim um Total O n-state Pow e r Lo ss (W ) 400 W K/ W C o nductio n A n g le 100 1K /W VSK.142.. Se rie s Per M odule TJ = 125°C 0 0 50 100 150 200 250 Tota l R M S O utp ut C urre nt (A) 30 0 25 50 75 10 0 12 5 M axim um A llowa ble A m b ient Tem perature (°C) Fig. 16 - On-State Power Loss Characteristics 1 00 0 R th 2 00 ΔR 100 To ta l O u tp ut C u rre nt (A ) - 0 W 0 K/ 0 .2 W 2K /W 0.1 6K / 2 x VSK .1 4 2.. Se ries Sin g le P h a se Brid g e C o n n ec te d T J = 12 5°C 20 0 K/ . 01 =0 40 0 W 180 (Sine ) 180 (Re ct) 60 0 K/ 0 .1 08 SA 04 M a xim um Tota l P o w er Lo ss (W ) 0. 0. 80 0 W 5K /W 0 .6 K /W 0 3 00 25 50 75 10 0 12 5 M axim um A llowa ble A m b ient Tem perature (°C) Fig. 17 - On-State Power Loss Characteristics R th 0. 06 ΔR 0.1 W - 8 00 K/ W 0.0 / 2K 0. 120 (Rec t) 0.0 W 12 0 0 = K/ SA 04 Ma xim u m Total Power Lo ss (W ) 16 0 0 8K /W K/ W 3 x VSK.142.. Series Three P hase Brid ge 0 .1 6 K/ W C o nnected 0.2 K/ W TJ = 125°C 4 00 0 0 5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 450 0 Total O utp ut C urre nt (A) 25 50 75 10 0 12 5 M axim um A llowab le Am bie nt Tem perature (°C) Fig. 18 - On-State Power Loss Characteristics Revision: 27-Jul-2018 Document Number: 94513 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com 40 0 VSK.162.. Series R thJ C (D C ) = 0.16 K/W 120 110 C o nd uc tio n Angle 100 90 30 60 90 80 120 180 70 0 30 60 90 1 20 150 180 M a xim um A vera g e O n -sta te Pow e r Lo ss (W ) M a xim um A llow ab le C a se Tem p era ture (°C) 130 Vishay Semiconductors DC 180 120 90 60 30 35 0 30 0 25 0 20 0 RM S Lim it 15 0 C o n du c tio n Pe rio d 10 0 VSK.162.. Series Per Junctio n TJ = 125°C 50 0 0 30 Averag e Fo rw ard C urrent (A) Fig. 19 - Current Ratings Characteristics 4 50 0 VSK .162.. Series R thJC (DC ) = 0.16 K/W 1 20 1 10 1 00 C on d uctio n P e rio d 30 90 60 80 90 120 70 180 DC 60 0 50 100 15 0 20 0 2 50 300 In itial TJ = 125°C 4 00 0 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 3 50 0 3 00 0 2 50 0 2 00 0 VSK.162.. Series Per Jun ction 1 50 0 1 Fig. 20 - Current Ratings Characteristics 10 3 00 180 120 90 60 30 2 50 2 00 RM S Lim it 1 50 1 00 50 C o nd uc tio n Angle 0 0 20 40 60 8 0 10 0 1 20 1 40 1 6 0 1 8 0 Averag e O n-state C urren t (A) Fig. 21 - On-State Power Loss Characteristics Peak Ha lf Sine W av e O n -sta te C urrent (A) 50 0 0 VSK .162.. Se ries Per Junction TJ = 125°C 10 0 Fig. 23 - Maximum Non-Repetitive Surge Current 4 00 M axim um Averag e O n-state Pow er Loss (W ) A t A ny R ate d Lo ad C on dition A n d W ith Rate d VRRM A pplie d Fo llow ing Surg e. Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N) A vera ge O n -sta te C urrent (A) 3 50 9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0 Fig. 22 - On-State Power Loss Characteristics Pea k H alf Sin e W a ve O n-state C urren t (A ) M axim um Allow a b le C ase Tem perature (°C) 1 30 60 Averag e O n -sta te C urren t (A ) M axim um Non Repetitive Surge Current V e rsus Pulse Train D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . In itia l TJ = 125°C No V olta ge Re ap plied Ra te d VR R M Re ap plie d 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 VSK .162.. Series Per Junction 15 0 0 0.0 1 0 .1 1 Pu lse Tra in D uration (s) Fig. 24 - Maximum Non-Repetitive Surge Current Revision: 27-Jul-2018 Document Number: 94513 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors 0. 0 W = K/ A hS K/ Rt W 2 K/ W ΔR C onductio n An gle W K/ 0 .1 200 08 W 0.1 300 04 0. K/ 400 06 180 120 90 60 30 500 0. 0. M a xim um T ota l O n-state Pow e r Loss (W ) 600 6K /W 0.2 K/ W VSK.162.. Se rie s Pe r M odule TJ = 125°C 100 0 0 100 200 400 0 300 Tota l RM S O utp ut C urre nt (A) 25 50 75 100 125 M axim um A llowab le Am b ie nt Tem p era ture (°C) Fig. 25 - On-State Power Loss Characteristics 0. 8 00 W W 0.3 3 00 0 .4 K/ ΔR 0.2 - 4 00 K/ K/ 5 00 W 04 180 (Sine ) 180 (Re ct) K/ 0. 6 00 12 = 0. A hS 7 00 08 Rt M axim um Total P ower Lo ss (W ) 9 00 W K/ W K/ W 2 x VSK.162.. Series 0 .6 K/ W Single Phase Brid ge 1 K/ W C onnected TJ = 125°C 2 00 1 00 0 0 50 100 15 0 20 0 25 0 Tota l O utput C urrent (A) 0 3 00 25 50 75 10 0 12 5 M axim um A llo wa ble A m b ient Tem perature (°C) Fig. 26 - On-State Power Loss Characteristics 04 A K/ 1 2 50 S R th 0. W W K/ K/ ΔR 0 .1 0 .2 5 00 2 120 (Rect) 7 50 08 0. 0 0. 1 0 00 = W M axim u m To tal Po wer Loss (W ) 1 5 00 2 K /W K/ W 3 x VSK.162.. Series 0 .3 K /W Three Phase Brid ge 0. 6 K / W C onnected TJ = 12 5°C 2 50 0 0 50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050 Tota l Output C urrent (A) 25 50 75 100 125 M a xim um Allo w a b le A m b ie n t Te m p era tu re (°C) Fig. 27 - On-State Power Loss Characteristics Revision: 27-Jul-2018 Document Number: 94513 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors 1 Transient Thermal Impedance Z thJC Instantaneous On-state Current (A) 10000 1000 TJ = 25˚C TJ = 125˚C 100 10 VSK.136.. Series Per Junction 1 0 1 2 3 4 5 Steady State Value (DC Operation) 0.1 0.01 VSK.136.. Series 0.001 0.001 Instantaneous On-state Voltage (V) Fig. 28 - On-State Voltage Drop Characteristics 1 1000 Transient Thermal Impedance Z thJC Instantaneous On-state Current (A) 10 Fig. 31 - Thermal Impedance ZthJC Characteristics 10000 TJ = 25˚C T = 125˚C J 100 10 VSK.142.. Series Per Junction 1 0 1 2 3 4 Steady State Value (DC Operation) 0.1 VSK.142.. Series 0.01 0.01 5 Instantaneous On-state Voltage (V) 0.1 1 Square Wave Pulse Duration (s) Fig. 29 - On-State Voltage Drop Characteristics Fig. 32 - Thermal Impedance ZthJC Characteristics 10 1 1000 TJ = 25˚C TJ = 125˚C 100 10 VSK.162.. Series Per Junction 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 30 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC 10000 Instantaneous On-state Current (A) 0.01 0.1 1 Square Wave Pulse Duration (s) Steady State Value (DC Operation) 0.1 VSK.162.. Series 0.01 0.01 0.1 1 Square Wave Pulse Duration (s) 10 Fig. 33 - Thermal Impedance ZthJC Characteristics Revision: 27-Jul-2018 Document Number: 94513 10 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com 10 Rec ta ng ula r g a te p ulse a )Re c o m m end e d lo a d line fo r ra ted d I/d t: 20 V, 20 W tr = 0.5 s, tp >= 6 s b )Re c o m m end e d loa d line fo r = 6 s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s (4) (3 ) (2) (a) (b ) T J = -40 °C T J = 12 5 °C 1 T J = 25 °C In stan ta neous G a te V olta ge (V ) 1 00 Vishay Semiconductors (1) VG D IG D 0 .1 0 .0 0 1 VSK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries 0.0 1 0 .1 Frequen cy Lim ited by PG (AV ) 1 10 100 1 00 0 Instan ta n eous G a te C urren t (A ) Fig. 34 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS-VS KT 1 2 162 16 PbF 3 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration 3 - Current rating: IT(AV) 4 - Voltage code x 100 = VRRM 5 - PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 27-Jul-2018 Document Number: 94513 11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ VSKT... + Two SCRs doubler circuit + T - K1 K2 G1 G2 ~ VSKH... + SCR/diode doubler circuit, positive control H + - K1 G1 ~ VSKL... + SCR/diode doubler circuit, negative control L + - K2 G2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95067 Revision: 27-Jul-2018 Document Number: 94513 12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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